Abstract: A process for manufacturing a quartz crystal element consists of the steps of producing plural quartz layers on a surface of a crystalline substrate having a lattice constant differing from that of quartz crystal, in which each of the quartz layers consists of a crystalline phase and an amorphous phase, and percentage of the crystalline phase in the quartz layer farther from the substrate is larger than percentage of the crystalline phase in the quartz layer adjacent to the substrate; and producing an epitaxially grown quartz crystal film on the surface of the quartz layer farther from the substrate by a reaction between silicon alkoxide and oxygen.

Abstract: An ID barcode printing section 13 prints IDs for identifying arrived mails. An address recognition section 21 recognizes address information for the primary sorting and the secondary sorting from the address images photographed by an image input section 14 for saving in an ID database 25. Based on the recognized primary sorting address information, the sorting control section 15 sorts the mails in a sorting box 16, 17 that corresponds to a secondary sorting post office 30. Upon filling up the sorting boxes 16, 17, the mails therein are transferred to a transportation medium. An ID writing section 18 writes secondary sorting address information of the mails in the transportation medium that is read from an ID database 25 for recording on the transportation medium.

Abstract: A process for manufacturing a quartz crystal element consists of the steps of producing plural quartz layers on a surface of a crystalline substrate having a lattice constant differing from that of quartz crystal, in which each of the quartz layers consists of a crystalline phase and an amorphous phase, and percentage of the crystalline phase in the quartz layer farther from the substrate is larger than percentage of the crystalline phase in the quartz layer adjacent to the substrate; and producing an epitaxially grown quartz crystal film on the surface of the quartz layer farther from the substrate by a reaction between silicon alkoxide and oxygen.

Abstract: A single crystal of quartz thin film and a production method therefor are provided. A method for producing a quartz epitaxial thin film comprises the steps of vaporizing a silicon alkoxide as a silicon source under atmospheric pressure to introduce the silicon alkoxide to a substrate with hydrogen chloride as a reaction promoter, and reacting ethyl silicate with oxygen to deposit a quartz on the substrate. The single crystal of quartz thin film has excellent crystalinity, and optical properties.

Abstract: This invention is to enable inter-domain routing using MPLS. When communication is carried out passing through plural domains, respective management servers managing respective domains cooperate to carry out path constitution and optimum routing. At the path constitution, the respective management servers connect links within the respective controlling domain to constitute paths to reach a target address. When the paths are constituted, label data is notified to nodes associated with the constituted paths, and isused at the routing. At the routing, the management server controlling the source domain obtains the dynamic transmission bandwidths from the respective management servers, and identifies the routing policy from a port number of a request to be routed or the like to identify the optimum path. When the optimum path is determined, it is possible to carry out the routing using the label data held in the respective nodes.

Abstract: This invention is to provide a technique enabling efficient routing in the entire network by totally viewing a state of the entire network from a specific server. An information processing method for managing paths between arbitrary nodes in a specific network according to the invention, includes: obtaining data concerning a utilization state of each link constituting a path, from associated nodes in the specific network; and calculating a value of dynamic transmission bandwidth in an entire path by using the data concerning the utilization state of each link constituting the path, and storing the calculated value into a management data storage. By the dynamic transmission bandwidth, that is, bandwidth, which can actually be used for communication to be carried out from now, it becomes possible to carry out efficient routing.

Abstract: An object of the present invention is to provide a single-phase film of a metal sulfide with good quality, and a method for preparing a metal sulfide film at a low cost in a convenient manner. The present invention provides a preparation method of a metal sulfide film, comprising the steps of providing metal halide, such as iron halide (FeCl3, FeI3, FeBr3, FeCl2, FeI2 and FeBr2), as a first raw material and a thioamide compound, such as thioacetamide, as a second raw material, preferably vaporizing these raw materials and reacting them at atmospheric pressure; and a metal sulfide film prepared by this method.

Abstract: A quartz oscillator includes a base having a recessed portion provided on one face thereof by processing to have an inverse mesa shape, a quartz thin-film formed on the other face of the base by epitaxial growth to have a thickness of 10 ?m or less, a vibrating reed portion, and excitation electrodes for mechanically supporting the quartz thin-film and for vibrating the vibrating reed portion.

Abstract: A process for manufacturing a quartz crystal element consists of the steps of producing plural quartz layers on a surface of a crystalline substrate having a lattice constant differing from that of quartz crystal, in which each of the quartz layers consists of a crystalline phase and an amorphous phase, and percentage of the crystalline phase in the quartz layer farther from the substrate is larger than percentage of the crystalline phase in the quartz layer adjacent to the substrate; and producing an epitaxially grown quartz crystal film on the surface of the quartz layer farther from the substrate by a reaction between silicon alkoxide and oxygen.

Abstract: The present invention provides a method for analyzing the C-terminal amino acid sequence of a peptide by applying reaction technique for successively releasing the C-terminal amino acids therefrom, which method can suppress, when releasing the C-terminal amino acids of the peptide in sequence, such a undesirable side reaction as cleavage of peptide bond in the intermediate position of the peptide, and allows to carry out the chemical treatment thereof under widely applicable conditions. In the method according to the present invention, an alkanoic acid anhydride and a perfluoroalkanoic acid both of vapor phase, which are supplied from a mixture containing an alkanoic acid anhydride with a small amount of a perfluoroalkanoic acid added thereto, are allowed to act on a dry sample of the peptide to be examined in a dry atmosphere at a temperature chosen in a range of 15 to 60° C.

Abstract: A single crystal of quartz thin film and a production method therefor are provided. A method for producing a quartz epitaxial thin film comprises the steps of vaporizing a silicon alkoxide as a silicon source under atmospheric pressure to introduce the silicon alkoxide to a substrate with hydrogen chloride as a reaction promoter, and reacting ethyl silicate with oxygen to deposit a quartz on the substrate. The single crystal of quartz thin film has excellent crystalinity, and optical properties.

Abstract: A quartz oscillator includes a base having a recessed portion provided on one face thereof by processing to have an inverse mesa shape, a quartz thin-film formed on the other face of the base by epitaxial growth to have a thickness of 10 &mgr;m or less, a vibrating reed portion, and excitation electrodes for mechanically supporting the quartz thin-film and for vibrating the vibrating reed portion.

Abstract: A quartz oscillator includes a base, a quartz thin-film formed on the base by epitaxial growth, a vibrating reed portion formed by processing the quartz thin-film, and excitation electrodes for vibrating the vibrating reed portion. At least one of the excitation electrodes may be formed by depositing a metal. The material for the base may include a single-element semiconductor, a compound semiconductor, and an oxide. When a semiconductor is used for the base, a semiconductor circuit may be provided to the base to form a module including a quartz oscillator.

Abstract: A single crystal thin film and a production method therefor are provided. A method for producing a crystal epitaxial thin film comprises the steps of vaporizing a silicon alkoxide as a silicon source under atmospheric pressure to introduce the silicon alkoxide to a substrate with hydrogen chloride as a reaction promoter, and reacting ethyl silicate with oxygen to deposit a crystal on the substrate. The single crystal thin film has excellent crystalinity, and optical properties.

Abstract: A crystal oscillator includes a base, a crystal thin-film formed on the base by epitaxial growth, a vibrating reed portion formed by processing the crystal thin-film, and excitation electrodes for vibrating the vibrating reed portion. At least one of the excitation electrodes may be formed by depositing a metal. The material for the base may include a single-element semiconductor, a compound semiconductor, and an oxide. When a semiconductor is used for the base, a semiconductor circuit may be provided to the base to form a module including a crystal oscillator.

Abstract: The invention provides a portable radio terminal with an infrared communication function by which, even if the communication distance varies, appropriate infrared emission power control can be performed to achieve reduction in power consumption in infrared communication by detecting the other party of infrared communication or a reception power. The portable radio terminal with an infrared communication function comprises an infrared communication section for transmitting and receiving a signal in an infrared frequency band, a communication object party detection section for detecting information of the other party of infrared communication, and a control section for controlling an emission power of the infrared communication section in response to information of the other party of infrared communication detected by the communication object party detection section.

Abstract: The present invention provides a method for the preparation of an iron nitride thin film by which an iron nitride thin film having a high growth rate can be epitaxially grown under atmospheric pressure without using any expensive vacuum system or raw materials, and an iron nitride thin film prepared by this method. This method for the preparation of an iron nitride thin film comprises the steps of vaporizing an iron halide used as a raw material 51 for the preparation of a thin film and reacting the resulting iron halide gas with a nitrogen source gas 7 containing nitrogen to produce an iron nitride gas; and preparing an epitaxial film of iron nitride 63 on a substrate 61 by allowing the iron halide gas to become adsorbed on the substrate 61 under atmospheric pressure and grow epitaxially thereon.

Abstract: When a MOS transistor is turned off, a forward current flows into a diode connected to the MOS transistor. When the MOS transistor is conducted, a reverse bias is applied to the diode. When the MOS transistor is turned on during the reverse recovery time of the diode, a short-circuit current flows into the MOS transistor, the diode, and a battery connected in series with the diode and the MOS transistor. In this case, an overcurrent flows through the wiring of the battery momentarily, and electromagnetic wave generates from the wiring. Accordingly, noise caused by the electromagnetic wave is generated in an antenna to a radio receiver. The drain current of the MOS transistor is gradually increased by a delay circuit, and the MOS transistor is shifted from a completely turned-off state to a completely turned-on state with a time period longer than a reverse recovery time of the diode. Consequently, no reverse current flows through the diode.

Abstract: A single crystal thin film and a production method therefor are provided. A method for producing a crystal epitaxial thin film comprises the steps of vaporizing a silicon alkoxide as a silicon source under atmospheric pressure to introduce the silicon alkoxide to a substrate with hydrogen chloride as a reaction promoter, and reacting ethyl silicate with oxygen to deposit a crystal on the substrate. The single crystal thin film has excellent crystalinity, and optical properties.

Abstract: A control device for a motor vehicle electric generator takes into account the relationship between field currents flowing through field windings of charging generators having different generation powers and output currents. The field current is increased once and instantly at the time of loading but prior to suppressing the increasing speed of the field current. The amount of the increase of the field current is controlled to be proportional to the field current before the loading. The control device according to the invention can be used for charging generators having different power generation capacities, and the battery voltage drops at the moment when switching in a motor vehicle electric load are reduced to substantially the same level.