Abstract: In an RFC diode, a semiconductor substrate includes an n? drift layer, an n buffer layer, and a diffusion layer provided between and in contact with the n buffer layer and a second metal layer. The diffusion layer includes an n+ cathode layer provided in contact with the n buffer layer and the second metal layer in a diode region. The n+ cathode layer includes a first n+ cathode layer in contact with the second metal layer and a second n+ cathode layer provided between the first n+ cathode layer and the n buffer layer in contact with the n buffer layer. Crystal defect density of the first n+ cathode layer is higher than crystal defect density of another diffusion layer.

Abstract: A semiconductor device includes a first electrode and a second electrode. The first electrode is connected to a collector layer and a first portion on the collector layer side of a cathode layer. The second electrode is connected to a second portion of the cathode layer excluding the first portion. A work function of the first electrode is larger than a work function of the second electrode, and one of the first electrode and the second electrode and the semiconductor substrate sandwich another of the first electrode and the second electrode in a thickness direction of the semiconductor substrate.

Abstract: Provided are a time series data management unit that manages time series data generated in a target system, and a context management unit that manages a context registered by a user in association with time series data managed by a time series data management unit. The context management unit executes a process of extracting time series data associated with a context set as a search target by the user out of the managed time series data.

Abstract: In a wafer hand, two carry portions are arranged in line in a first direction, the two carry portions are connected via a joint portion, each of the two carry portions extends from the joint portion in a second direction orthogonal to the first direction, an interval between inner side surfaces of the two carry portions is 170 mm or more, an interval between outer side surfaces of the two carry portions is 280 mm or less, and when a distance between inner side surfaces of the two carry portions is A (mm), and a length of the inner side surfaces of the two carry portions in the second direction is L (mm), a relationship of L?(3002?A2)0.5 is satisfied.

Abstract: A wafer grinding apparatus performs grinding processing for grinding a semiconductor wafer with a grindstone. The grindstone has a wear rate as a characteristic. The wear rate is 5% or more, and less than 200%. A determination part performs determination processing for determining whether a grinding state with respect to the semiconductor wafer is abnormal or normal, based on at least one of a load current of a motor and a grinding wear amount.

Abstract: The present invention has an object of providing a stepped wafer that can prevent a resist from remaining after development, and a method for manufacturing the stepped wafer. The stepped wafer according to the present invention is a stepped wafer having a step and whose main surface is thinner in a center portion and is thicker in an outer periphery. The step includes a curved surface with a radius of curvature ranging from 300 ?m to 1800 ?m.

Abstract: A wafer grinding apparatus performs grinding processing for grinding a semiconductor wafer with a grindstone. The grindstone has a wear rate as a characteristic. The wear rate is 5% or more, and less than 200%. A determination part performs determination processing for determining whether a grinding state with respect to the semiconductor wafer is abnormal or normal, based on at least one of a load current of a motor and a grinding wear amount.

Abstract: An edge exposure apparatus for exposure of an outer circumferential portion of a semiconductor substrate to light includes a light source provided to be able to emit light to the outer circumferential portion and a mirror having a reflection surface arranged to extend in a direction intersecting with an optical axis of light emitted from the light source. The mirror is provided between the outer circumferential portion and a center of the semiconductor substrate in a radial direction of the semiconductor substrate in exposure of the outer circumferential portion of the semiconductor substrate to light.

Abstract: The present invention has an object of providing a stepped wafer that can prevent a resist from remaining after development, and a method for manufacturing the stepped wafer. The stepped wafer according to the present invention is a stepped wafer having a step and whose main surface is thinner in a center portion and is thicker in an outer periphery. The step includes a curved surface with a radius of curvature ranging from 300 ?m to 1800 ?m.

Abstract: An edge exposure apparatus for exposure of an outer circumferential portion of a semiconductor substrate to light includes a light source provided to be able to emit light to the outer circumferential portion and a mirror having a reflection surface arranged to extend in a direction intersecting with an optical axis of light emitted from the light source. The mirror is provided between the outer circumferential portion and a center of the semiconductor substrate in a radial direction of the semiconductor substrate in exposure of the outer circumferential portion of the semiconductor substrate to light.

Abstract: A plurality of higher-level units are connected to a library unit, for example, as a lower-level unit through an SCSI. Furthermore, the plurality of higher-level units are connected by means of a communication path to mutually exchange information regarding the status of use of SCSI for the access to the lower-level library unit. A monitoring control section is provided in each of the plurality of higher-level units to instruct necessary processing in response to the status of use of SCSI. Particularly, when an abnormal occupation of SCSI caused by hang-up of any other higher-level unit is detected by the monitoring control section of a higher-level unit, the higher-level unit instructs its own SCSI controller to reset the bus to achieve bus reset of the other SCSI controller, thus releasing the occupation.