Patents by Inventor Na Ra Kim

Na Ra Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9685519
    Abstract: A semiconductor device includes a field regions in a substrate to define active regions, gate trenches including active trenches disposed across the active region and field trenches in the field regions, and word lines that fill the gate trenches and extend in a first direction. The word lines include active gate electrodes occupying the active trenches, and field gate electrodes occupying the field trenches. The bottom surface of each field gate electrode, which is disposed between active regions that are adjacent to each other and have one word line therebetween, is disposed at a higher level than the bottom surfaces of the active gate electrodes.
    Type: Grant
    Filed: June 2, 2015
    Date of Patent: June 20, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Na-Ra Kim, Seung-Hwan Kim, Sung-Hee Lee, Dae-Sin Kim, Ji-Young Kim, Dong-Soo Woo
  • Patent number: 9293180
    Abstract: A memory device comprises: a memory cell array comprising first and second word lines located adjacent to each other, a first memory cell connected to the first word line, and a second memory cell connected to the second word line and located adjacent to the first memory cell; and a word line voltage supplying unit that transitions a word line voltage of the first word line from a first word line voltage to a second word line voltage, in response to a first control signal. A transition control unit generates the first control signal for controlling a pulse of the word line voltage of the first word line in a transition period from the first word line voltage to the second word line voltage in such a way that a transition waveform profile from the first word line voltage to the second word line voltage is different from a transition waveform profile from the second word line voltage to the first word line voltage.
    Type: Grant
    Filed: May 29, 2014
    Date of Patent: March 22, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Eui-chul Jeong, Sung-hee Lee, Dae-sin Kim, Seung-hwan Kim, Dae-sun Kim, Sua Kim, Dong-soo Woo, Na-ra Kim
  • Publication number: 20150263113
    Abstract: A semiconductor device includes a field regions in a substrate to define active regions, gate trenches including active trenches disposed across the active region and field trenches in the field regions, and word lines that fill the gate trenches and extend in a first direction. The word lines include active gate electrodes occupying the active trenches, and field gate electrodes occupying the field trenches. The bottom surface of each field gate electrode, which is disposed between active regions that are adjacent to each other and have one word line therebetween, is disposed at a higher level than the bottom surfaces of the active gate electrodes.
    Type: Application
    Filed: June 2, 2015
    Publication date: September 17, 2015
    Inventors: NA-RA KIM, SEUNG-HWAN KIM, SUNG-HEE LEE, DAE-SIN KIM, JI-YOUNG KIM, DONG-SOO WOO
  • Patent number: 9082850
    Abstract: A semiconductor device includes a field regions in a substrate to define active regions, gate trenches including active trenches disposed across the active region and field trenches in the field regions, and word lines that fill the gate trenches and extend in a first direction. The word lines include active gate electrodes occupying the active trenches, and field gate electrodes occupying the field trenches. The bottom surface of each field gate electrode, which is disposed between active regions that are adjacent to each other and have one word line therebetween, is disposed at a higher level than the bottom surfaces of the active gate electrodes.
    Type: Grant
    Filed: August 6, 2013
    Date of Patent: July 14, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Na-Ra Kim, Seung-Hwan Kim, Sung-Hee Lee, Dae-Sin Kim, Ji-Young Kim, Dong-Soo Woo
  • Publication number: 20140362637
    Abstract: A memory device comprises: a memory cell array comprising first and second word lines located adjacent to each other, a first memory cell connected to the first word line, and a second memory cell connected to the second word line and located adjacent to the first memory cell; and a word line voltage supplying unit that transitions a word line voltage of the first word line from a first word line voltage to a second word line voltage, in response to a first control signal. A transition control unit generates the first control signal for controlling a pulse of the word line voltage of the first word line in a transition period from the first word line voltage to the second word line voltage in such a way that a transition waveform profile from the first word line voltage to the second word line voltage is different from a transition waveform profile from the second word line voltage to the first word line voltage.
    Type: Application
    Filed: May 29, 2014
    Publication date: December 11, 2014
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Eui-chul Jeong, Sung-hee Lee, Dae-sin Kim, Seung-hwan Kim, Dae-sun Kim, Sua Kim, Dong-soo Woo, Na-ra Kim
  • Publication number: 20140110786
    Abstract: A semiconductor device includes a field regions in a substrate to define active regions, gate trenches including active trenches disposed across the active region and field trenches in the field regions, and word lines that fill the gate trenches and extend in a first direction. The word lines include active gate electrodes occupying the active trenches, and field gate electrodes occupying the field trenches. The bottom surface of each field gate electrode, which is disposed between active regions that are adjacent to each other and have one word line therebetween, is disposed at a higher level than the bottom surfaces of the active gate electrodes.
    Type: Application
    Filed: August 6, 2013
    Publication date: April 24, 2014
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: NA-RA KIM, SEUNG-HWAN KIM, SUNG-HEE LEE, DAE-SIN KIM, JI-YOUNG KIM, DONG-SOO WOO
  • Publication number: 20120190634
    Abstract: A lipoteichoic acid (LTA)-derived glycolipid, and a pharmaceutical, food or cosmetic composition and a vaccine adjuvant including the same are provided. The LTA-derived glycolipid can inhibit the production of inflammatory cytokines and thus have anti-inflammatory effects. Therefore, the pharmaceutical, food or cosmetic compositions including the LTA-derived glycolipid can be used to prevent and treat inflammatory diseases, and the LTA-derived glycolipid can be also used as the vaccine adjuvant.
    Type: Application
    Filed: August 26, 2010
    Publication date: July 26, 2012
    Applicant: RNA INC.
    Inventors: Dae Kyun Chung, Kyoung Soon Jang, Byung Gee Kim, Han Geun Kim, Na Ra Kim, Hea Young Lee, Bong Jun Jung, Tae Rahk Kim, Ji Hye Jeong