Abstract: A display device includes a multilayer passivation structure and has an undercut formed in the passivation structure such that a connection between a cathode and an auxiliary wiring is formed inside the undercut, so as to prevent voltage drop of the cathode and influence of hydrogen on thin film transistors and thus to improve reliability of the display device.

Abstract: A display device includes a multilayer passivation structure and has an undercut formed in the passivation structure such that a connection between a cathode and an auxiliary wiring is formed inside the undercut, so as to prevent voltage drop of the cathode and influence of hydrogen on thin film transistors and thus to improve reliability of the display device.

Abstract: Embodiments of the present disclosure relate to a memory device and an operating method thereof. According to the embodiments of the present disclosure, when a read failure for a first read command among a plurality of read commands inputted from a memory controller occurs, the memory device may execute in an overlapping manner, a read retry operation for the first read command and a read operation for a second read command among the plurality of read commands.

Abstract: Provided herein may be a memory system and a method of operating the memory system. The memory system may include a memory device including a plurality of memory blocks, and a memory controller configured to: manage an accumulated erase count value and an open block erase count value of each of the plurality of memory blocks, and select a target memory block on which a program operation is to be performed based on the accumulated erase count value and the open block erase count value of each of the plurality of memory blocks.

Abstract: Embodiments of the present disclosure relate to a memory device and an operating method thereof. According to the embodiments of the present disclosure, when a read failure for a first read command among a plurality of read commands inputted from a memory controller occurs, the memory device may execute in an overlapping manner, a read retry operation for the first read command and a read operation for a second read command among the plurality of read commands.

Abstract: A display device includes a multilayer passivation structure and has an undercut formed in the passivation structure such that a connection between a cathode and an auxiliary wiring is formed inside the undercut, so as to prevent voltage drop of the cathode and influence of hydrogen on thin film transistors and thus to improve reliability of the display device.

Abstract: A display device that can prevent deformation of a reflective electrode in a structure has an auxiliary connection pattern formed of the same materials of an anode including the reflective electrode for high reflection characteristics, so as to ensure a reliable voltage drop structure of a cathode and to improve transmission efficiency of transmission parts and luminance of emission parts in a structure having both the transmission parts and the emission parts.

Abstract: Provided herein may be a memory system and a method of operating the memory system. The memory system may include a memory device including a plurality of memory blocks, and a memory controller configured to: manage an accumulated erase count value and an open block erase count value of each of the plurality of memory blocks, and select a target memory block on which a program operation is to be performed based on the accumulated erase count value and the open block erase count value of each of the plurality of memory blocks.

Abstract: A data storage device may include a storage and a controller. The storage includes a plurality of memory cells. The controller is configured to map a logical address of a host on a first physical address of the storage to perform data exchanges with respect to the storage. The controller includes an address error management component. The address error management component is configured to generate a first checker based on the first physical address. The address error management component transmits the first checker and the first physical address to the storage. When an address error occurs in the first physical address based on an address error check information that is transmitted from the storage, the address error management component is configured to remap the logical address on a second physical address.

Abstract: A method for preparing bio adipic acid includes steps of (a) preparing a glucaric acid potassium salt by mixing and reacting glucose, nitric acid (HNO3), sodium nitrite (NaNO2) and potassium hydroxide (KOH), (b) preparing glucamide from the glucaric acid potassium salt prepared in the step (a), (c) preparing 2,4-hexadiene diamide by performing a deoxydehydration reaction on the glucamide prepared in the step (b), (d) preparing adipamide by introducing the 2,4-hexadiene diamide prepared in the step (c), hydrogen and a hydrogenation catalyst to a reactor and performing a hydrogenation reaction, and (e) preparing adipic acid by introducing the adipamide prepared in the step (d) and an aqueous hydrochloric acid solution to a reactor and then performing a hydrolysis reaction at a specific temperature.

Abstract: The present disclosure relates to an additive for improving the light stability of a conjugated polymer, a method for preparing the same and an organic photovoltaic cell containing the same. Since the additive of the present disclosure improves the light stability of a conjugated polymer, it can be used for an organic photovoltaic (OPV) cell device and can also be usefully used for an organic optoelectronic device using a conductive polymer, such as an organic photodiode (OPD), an organic thin-film transistor (OTFT), an organic light-emitting diode (OLED), etc.

Abstract: The present disclosure relates to a method for producing glucaric acid, and more particularly, to a method for producing glucaric acid including the steps of: (1) inputting aldohexose and potassium hydroxide to an aqueous solution; and (2) deriving a catalytic oxidation reaction after adding a supported noble metal catalyst to the aqueous solution under the presence of oxygen gas.