Abstract: Methods for forming thin, low resistivity metal layers, such as tungsten (W) and ruthenium (Ru) layers. The methods include depositing a metal material onto a substrate via ion beam deposition with assist in a process chamber at a temperature of at least 250° C. to produce the metal film. A resulting thin tungsten film has large and highly oriented ?(110) grains having a resistivity less than 10 ??-cm and thickness less than 300 ?, with no discernable ?-phase. A resulting thin ruthenium film has a resistivity less than 12 ??-cm and a thickness less than 300 ?.

Abstract: Methods for forming thin, low resistivity metal layers, such as tungsten (W) and ruthenium (Ru) layers. The methods include depositing a metal material onto a substrate via ion beam deposition with assist in a process chamber at a temperature of at least 250° C. to produce the metal film. A resulting thin tungsten film has large and highly oriented ?(110) grains having a resistivity less than 9 ??-cm and thickness less than 300 ?, with no discernable ?-phase. A resulting thin ruthenium film has a resistivity less than 10 ??-cm and a thickness less than 300 ?.

Abstract: Methods for forming thin, low resistivity metal layers, such as tungsten (W) and ruthenium (Ru) layers. The methods include depositing a metal material onto a substrate via ion beam deposition with assist in a process chamber at a temperature of at least 250° C. to produce the metal film. A resulting thin tungsten film has large and highly oriented ?(110) grains having a resistivity less than 10 ??-cm and thickness less than 300 ?, with no discernable ?-phase. A resulting thin ruthenium film has a resistivity less than 12 ??-cm and a thickness less than 300 ?.

Abstract: This disclosure provides various methods for improved etching of spin-transfer torque random access memory (STT-RAM) structures. In one example, the method includes (1) ion beam etch of the stack just past the MTJ at near normal incidence, (2) a short clean-up etch at a larger angle in a windowed mode to remove any redeposited material along the sidewall that extends from just below the MTJ to just above the MTJ, (3) deposition of an encapsulant with controlled step coverage to revert to a vertical or slightly re-entrant profile from the tapered profile generated by the etch steps, (4) ion beam etch of the remainder of the stack at near normal incidence while preserving the encapsulation along the sidewall of the MTJ, (5) clean-up etch at a larger angle and windowed mode to remove redeposited materials from the sidewalls, and (6) encapsulation of the etched stack.

Abstract: This disclosure provides various methods for improved etching of spin-transfer torque random access memory (STT-RAM) structures. In one example, the method includes (1) ion beam etch of the stack just past the MTJ at near normal incidence, (2) a short clean-up etch at a larger angle in a windowed mode to remove any redeposited material along the sidewall that extends from just below the MTJ to just above the MTJ, (3) deposition of an encapsulant with controlled step coverage to revert to a vertical or slightly re-entrant profile from the tapered profile generated by the etch steps, (4) ion beam etch of the remainder of the stack at near normal incidence while preserving the encapsulation along the sidewall of the MTJ, (5) clean-up etch at a larger angle and windowed mode to remove redeposited materials from the sidewalls, and (6) encapsulation of the etched stack.

Abstract: An inline processing system for patterning magnetic recording layers on hard discs for use in a hard disc drive. Discs are processed on both sides simultaneously in a vertical orientation, in round plate-like holders called MDCs. A plurality (as many as 10) discs are held in a dial carrier of the MDC, and transferred from one process station to another. The dial carrier of the MDC may be rotated and/or angled at up to 70° from normal in each process station, so that one or a plurality of process sources may treat the discs simultaneously. This configuration provides time savings and a reduction in the number and size of process sources needed. A mask enhancement process for patterning of magnetic media, and a filling and planarizing process used therewith, are also disclosed.