Abstract: This invention comprises plurality of edge illuminated photodiodes. More specifically, the photodiodes of the present invention comprise novel structures designed to minimize reductions in responsivity due to edge surface recombination and improve quantum efficiency. The novel structures include, but are not limited to, angled facets, textured surface regions, and appropriately doped edge regions.

Abstract: The present invention is directed towards radiation detectors and methods of detecting incident radiation. In particular the present invention is directed towards photodiodes with controlled current leakage detector structures and a method of manufacturing photodiodes with controlled current leakage detector structures. The photodiodes of the present invention are advantageous in that they have special structures to substantially reduce detection of stray light. Additionally, the present invention gives special emphasis to the design, fabrication, and use of photodiodes with controlled leakage current.

Abstract: This invention comprises photodiodes, optionally organized in the form of an array, including p+ deep diffused regions or p+ and n+ deep diffused regions. More specifically, the invention permits one to fabricate thin 4 inch and 6 inch wafer using the physical support provided by a n+ deep diffused layer and/or p+ deep diffused layer. Consequently, the present invention delivers high device performances, such as low crosstalk, low radiation damage, high speed, low leakage dark current, and high speed, using a thin active layer.

Abstract: The present invention is directed toward a detector structure, detector arrays, a method of detecting incident radiation, and a method of manufacturing the detectors. The present invention comprises several embodiments that provide for reduced radiation damage susceptibility, decreased affects of cross-talk, and increased flexibility in application. In one embodiment, the present invention comprises a plurality of front side illuminated photodiodes, optionally organized in the form of an array, with both the anode and cathode contact pads on the back side. The front side illuminated, back side contact photodiodes have superior performance characteristics, including less radiation damage, less crosstalk using a suction diode, and reliance on reasonably thin wafers. Another advantage of the photodiodes of the present invention is that high density with high bandwidth applications can be effectuated.

Abstract: The present invention is directed towards radiation detectors and methods of detecting incident radiation. In particular the present invention is directed towards photodiodes with controlled current leakage detector structures and a method of manufacturing photodiodes with controlled current leakage detector structures. The photodiodes of the present invention are advantageous in that they have special structures to substantially reduce detection of stray light. Additionally, the present invention gives special emphasis to the design, fabrication, and use of photodiodes with controlled leakage current.