Abstract: The present invention provides a nanocomposite-based non-volatile memory device and a method for manufacturing the same, the nanocomposite-based non-volatile memory device comprising: a substrate; a lower electrode formed on the substrate; an active layer formed on the lower electrode and made of an insulating organic material, in which a polycrystalline four-element nanocomposite is dispersed; and an upper electrode formed on the active layer. According to the present invention, a non-volatile memory device can be provided which has an increased ON/OFF ratio and thereby substantially decreases sensing errors resulting from small noise of a circuit, and a non-volatile memory can be easily manufactured at comparatively low costs.