Abstract: A storage system with privacy-centric multi-partitions and method for use therewith are provided. In one embodiment, a storage system comprises a memory configured to be partitioned into a plurality of partitions, wherein each partition is associated with its own boot block, and wherein each boot block is configured to boot any of the plurality of partitions. The storage system also comprises a controller configured to communicate with the memory and to: in response to a failure to boot one of the plurality of partitions with that partition's boot block, use a boot block of another one of the plurality of partitions to boot the one of the plurality of partitions; and restrict access to each of the plurality of partitions only to authenticated entities. Other embodiments are provided.

Abstract: A fractured semiconductor die is disclosed, together with a semiconductor device including the fractured semiconductor die. During fabrication of the semiconductor dies in a wafer, the wafer may be scored in a series of parallel scribe lines through portions of each row of semiconductor dies. The scribe lines then propagate through the full thickness of the wafer to fracture off a portion of each of the semiconductor dies. It may happen that electrical traces such as bit lines in the memory cell arrays short together during the die fracture process. These electrical shorts may be cleared by running a current through each of the electrical traces.

Abstract: Systems and methods are disclosed for a self-indexing removable storage device. In certain embodiments, the removable storage device is configured to be connected to a memory reader of a host device. The removable storage device comprises storage media, a controller configured to run firmware, and a buffer. The controller is configured to, while connected to a first host device, receive a write operation from the first host device, monitor changes to the storage media caused by the write operation, and update a file index stored on the removable storage device with the monitored changes. The controller is further configured to, in response to connecting the removable storage device to a memory reader of a second host device, provide the file index to an application on the second host device, and cause the application to display files on the storage media based on the file index.

Abstract: A storage system with privacy-centric multi-partitions and method for use therewith are provided. In one embodiment, a storage system comprises a memory configured to be partitioned into a plurality of partitions, wherein each partition is associated with its own boot block, and wherein each boot block is configured to boot any of the plurality of partitions. The storage system also comprises a controller configured to communicate with the memory and to: in response to a failure to boot one of the plurality of partitions with that partition's boot block, use a boot block of another one of the plurality of partitions to boot the one of the plurality of partitions; and restrict access to each of the plurality of partitions only to authenticated entities. Other embodiments are provided.

Abstract: A fractured semiconductor die is disclosed, together with a semiconductor device including the fractured semiconductor die. During fabrication of the semiconductor dies in a wafer, the wafer may be scored in a series of parallel scribe lines through portions of each row of semiconductor dies. The scribe lines then propagate through the full thickness of the wafer to fracture off a portion of each of the semiconductor dies. It may happen that electrical traces such as bit lines in the memory cell arrays short together during the die fracture process. These electrical shorts may be cleared by running a current through each of the electrical traces.

Abstract: A fractured semiconductor die is disclosed, together with a semiconductor device including the fractured semiconductor die. During fabrication of the semiconductor dies in a wafer, the wafer may be scored in a series of parallel scribe lines through portions of each row of semiconductor dies. The scribe lines then propagate through the full thickness of the wafer to fracture off a portion of each of the semiconductor dies. It may happen that electrical traces such as bit lines in the memory cell arrays short together during the die fracture process. These electrical shorts may be cleared by running a current through each of the electrical traces.

Abstract: A method for error correction in a memory system includes determining a bit error ratio for a memory block of the memory system during a read operation. The method further includes determining whether the bit error ratio is between a first threshold and a second threshold. The method further includes based on a determination that the bit error ratio is between the first threshold and the second threshold, performing a select gate drain (SGD) read operation on a SGD word line of the memory block. The method further includes generating first soft bit data using SGD data corresponding to the SGD read operation. The method further includes performing a low-density parity-check correction using the first soft bit data on the memory block.

Abstract: Systems and methods are disclosed for a self-indexing removable storage device. In certain embodiments, the removable storage device is configured to be connected to a memory reader of a host device. The removable storage device comprises storage media, a controller configured to run firmware, and a buffer. The controller is configured to, while connected to a first host device, receive a write operation from the first host device, monitor changes to the storage media caused by the write operation, and update a file index stored on the removable storage device with the monitored changes. The controller is further configured to, in response to connecting the removable storage device to a memory reader of a second host device, provide the file index to an application on the second host device, and cause the application to display files on the storage media based on the file index.

Abstract: A method for error correction in a memory system includes determining a bit error ratio for a memory block of the memory system during a read operation. The method further includes determining whether the bit error ratio is between a first threshold and a second threshold. The method further includes based on a determination that the bit error ratio is between the first threshold and the second threshold, performing a select gate drain (SGD) read operation on a SGD word line of the memory block. The method further includes generating first soft bit data using SGD data corresponding to the SGD read operation. The method further includes performing a low-density parity-check correction using the first soft bit data on the memory block.

Abstract: Technology is described herein for performing memory array operations in multiple memory dies in parallel. The memory dies, or groups of non-volatile memory cells on the memory dies, may exhibit different performance times for memory array operations. For example, non-volatile memory cells on one memory die may program more slowly than those on another memory die. The performance times of the memory dies (or groups of the memory cells on different memory dies) may be characterized relative to one another. Memory dies having similar performance times may be placed into the same meta-groups. Meta-groups may be formed at the die, zone, or block level. The meta-groups can be re-formed over the lifetime of the memory system, which can account for changes in performance times over the lifetime of the memory system.

Abstract: Technology is described herein for performing memory array operations in multiple memory dies in parallel. The memory dies, or groups of non-volatile memory cells on the memory dies, may exhibit different performance times for memory array operations. For example, non-volatile memory cells on one memory die may program more slowly than those on another memory die. The performance times of the memory dies (or groups of the memory cells on different memory dies) may be characterized relative to one another. Memory dies having similar performance times may be placed into the same meta-groups. Meta-groups may be formed at the die, zone, or block level. The meta-groups can be re-formed over the lifetime of the memory system, which can account for changes in performance times over the lifetime of the memory system.