Abstract: Memory driver circuitry for driving a memory cell or cells of a memory device includes first driver path circuitry and selection circuitry. The first driver path circuitry includes driver circuitry that outputs a first signal and selection circuitry that receives the first signal and a second signal, and outputs a first selected signal. The first selected signal is a selected one of the first signal and the second signal. The selection circuitry of the memory driver circuitry receives a third signal and a fourth signal, and outputs a bias voltage signal to header circuitry of a memory cell. The bias voltage signal is a selected one of the third signal and the fourth signal. The third signal corresponds to the first selected signal.

Abstract: A level shifter may include a first transistor stack including at least four transistors arranged from a first voltage source to ground, including second and third transistors coupled with bias voltage source, and a fourth transistor coupled with an input to receive an input signal at a second voltage or ground. The level shifter may include a second transistor stack comprising at least four transistors arranged from the first voltage source to ground, including second and third transistors coupled with the bias voltage source, and a fourth transistor to receive an inverse of the input signal. A first transistor of the first transistor stack is cross-coupled with a first transistor of the second transistor stack. A level shifter may include a first output coupled with the second transistor stack between the second and third transistors to provide a first output signal at the first voltage or ground.

Abstract: A cascaded thin-oxide N-Well voltage steering circuit includes a reference voltage generator that outputs a reference voltage within a range of first and second supply voltages, a first voltage steering circuit that outputs a higher available one of the reference voltage and the second supply voltage as an interim voltage, and a second voltage steering circuit that outputs a higher available one of the first voltage and the interim voltage at an output of the second voltage steering circuit. The interim voltage is applied to N-wells of PMOS transistors of the first voltage steering circuit. The output of the second voltage steering circuit is applied to N-wells of PMOS transistors of the second voltage steering circuit. The output of the second voltage steering circuit may also be applied to N-wells of PMOS transistors of other circuitry. The cascaded thin-oxide N-Well voltage steering circuit may consist substantially of thin-oxide PMOS transistors.

Abstract: A cascaded thin-oxide N-Well voltage steering circuit includes a reference voltage generator that outputs a reference voltage within a range of first and second supply voltages, a first voltage steering circuit that outputs a higher available one of the reference voltage and the second supply voltage as an interim voltage, and a second voltage steering circuit that outputs a higher available one of the first voltage and the interim voltage at an output of the second voltage steering circuit. The interim voltage is applied to N-wells of PMOS transistors of the first voltage steering circuit. The output of the second voltage steering circuit is applied to N-wells of PMOS transistors of the second voltage steering circuit. The output of the second voltage steering circuit may also be applied to N-wells of PMOS transistors of other circuitry. The cascaded thin-oxide N-Well voltage steering circuit may consist substantially of thin-oxide PMOS transistors.

Abstract: Techniques to utilize thin-oxide devices, such as gate-all-around metal-oxide-semiconductor field-effect transistors (MOSFETs), in high voltage environments, such as to provide a high-voltage based low-power, temperature dependent, thin-oxide-only on-chip high current low drop out (LDO) regulator in a system-on-chip (SoC), such as provide power to configuration random-access memory (CRAM) cells distributed throughout configurable/programmable circuitry. Thin-oxide only circuitry may include thin-oxide-only amplifier circuitry, thin-oxide-only power gate circuitry, thin-oxide-only level shifters that shift voltage swings of control signals to voltage domains of the power gate circuitry, and thin-oxide-only clamp circuitry.

Abstract: Some examples described herein relate to multi-chip devices. In an example, a multi-chip device includes first and second chips. The first chip includes a power supply circuit and a logic circuit. The first and second chips are coupled together. The second chip is configured to receive power from the power supply circuit. The second chip includes a programmable circuit, a pull-up circuit, and a detector circuit. The detector circuit is configured to detect a presence of a power voltage on the second chip and responsively output a presence signal. The power voltage on the second chip is based on the power from the power supply circuit. The logic circuit is configured to generate a pull-up signal based on the presence signal. The pull-up circuit is configured to receive the pull-up signal and configured to pull up a voltage of a node of the programmable circuit responsive to the pull-up signal.

Abstract: Some examples described herein relate to multi-chip devices. In an example, a multi-chip device includes first and second chips. The first chip includes a power supply circuit and a logic circuit. The first and second chips are coupled together. The second chip is configured to receive power from the power supply circuit. The second chip includes a programmable circuit, a pull-up circuit, and a detector circuit. The detector circuit is configured to detect a presence of a power voltage on the second chip and responsively output a presence signal. The power voltage on the second chip is based on the power from the power supply circuit. The logic circuit is configured to generate a pull-up signal based on the presence signal. The pull-up circuit is configured to receive the pull-up signal and configured to pull up a voltage of a node of the programmable circuit responsive to the pull-up signal.

Abstract: Examples described herein provide a method for disabling a defective portion of a fabric die of a stacked IC device. The method includes receiving a signal indicating that a portion of a fabric die of a stacked IC device including at least two fabric dies is defective. The method further includes, in response to the signal, pulling a source voltage rail of the defective portion to ground, thereby disabling the portion, and operating the remainder of the fabric die without interference from or contention with the disabled portion. In one example, the stacked IC device is an active on active (AoA) device, and the portion of the fabric die includes a configuration memory cell. In one example, the signal is received after power-up of the stacked IC device.

Abstract: Apparatus and associated methods relate to a consolidated power-on-reset system (PORS) at a system-on-chip (SoC) level. In an illustrative example, an integrated circuit may include a first power domain and a second power region. A level shifter circuit may be coupled to translate data from the first power domain to the second power domain. A PORS including a voltage detection circuit, a glitch filter circuit, and logic gates may be configured to generate isolation signals between the first power domain and the second power domain. The level shifter circuit may be enabled in response to the generated isolation signals. By using the isolation signals, multiple power domains on IC may be managed comprehensively during power-up to avoid unstable operation.

Abstract: An example read address generation circuit for a static random access memory (SRAM) cell includes an operational amplifier having a non-inverting input coupled to a reference voltage, a memory emulation circuit having an output coupled to an inverting input of the operational amplifier and a control input coupled to an output of the operational amplifier, and a multiplexer having a first input coupled to receive a constant read voltage, a second input coupled to the output of the operational amplifier, and an output coupled to supply a read address voltage to the SRAM cell.

Abstract: A circuit includes a divider circuit block configured to generate a trim term signal (VBG_TRIM) that is temperature and process independent. The circuit further includes a processing circuit block configured to multiply a temperature dependent reference voltage signal (TAP_GG) by a factor, and to sum the trim term signal with a result of the multiplication to generate an output reference voltage (VGG).