Patents by Inventor Narendra Singh Mehta
Narendra Singh Mehta has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12154987Abstract: A method for fabricating a transistor on a semiconductor wafer includes providing a partial transistor containing a gate stack, extension regions, and source/drain sidewalls. The method also includes performing a source/drain implant of the semiconductor wafer, forming a cap layer over the semiconductor wafer, and performing a source/drain anneal. In addition, the method includes performing a damage implant of the cap layer and removing the cap layer over the semiconductor wafer.Type: GrantFiled: December 13, 2021Date of Patent: November 26, 2024Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Mahalingam Nandakumar, Wayne Bather, Narendra Singh Mehta
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Publication number: 20220102553Abstract: A method for fabricating a transistor on a semiconductor wafer includes providing a partial transistor containing a gate stack, extension regions, and source/drain sidewalls. The method also includes performing a source/drain implant of the semiconductor wafer, forming a cap layer over the semiconductor wafer, and performing a source/drain anneal. In addition, the method includes performing a damage implant of the cap layer and removing the cap layer over the semiconductor wafer.Type: ApplicationFiled: December 13, 2021Publication date: March 31, 2022Inventors: Mahalingam Nandakumar, Wayne Bather, Narendra Singh Mehta
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Publication number: 20170365715Abstract: A method for fabricating a transistor on a semiconductor wafer includes providing a partial transistor containing a gate stack, extension regions, and source/drain sidewalls, The method also includes performing a source/drain implant of the semiconductor wafer, forming a cap layer over the semiconductor wafer, and performing a source/drain anneal. In addition, the method includes performing a damage implant of the cap layer and removing the cap layer over the semiconductor wafer.Type: ApplicationFiled: August 10, 2017Publication date: December 21, 2017Inventors: Mahalingam Nandakumar, Wayne Bather, Narendra Singh Mehta
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Patent number: 9219369Abstract: An electronic device is described. The electronic device includes a first port. The electronic device also includes a second port. The electronic device further includes a multiphase charger. The multiphase charger includes a first buck. The multiphase charger also includes a second buck. The multiphase charger further includes a first port switch. The multiphase charger also includes a second port switch. The multiphase charger further includes a reverse boost switch. The multiphase charger also includes a multiphase switch.Type: GrantFiled: March 15, 2013Date of Patent: December 22, 2015Assignee: QUALCOMM IncorporatedInventors: Narendra Singh Mehta, Chris M Rosolowski, Sandeep Chaman Dhar, Todd R Sutton
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Patent number: 9119162Abstract: A method and apparatus for extending the driving capacity of a power management device are provided. The method involves determining an energy requirement for the operation of a power management device. Next, the method compares the energy requirement for the operation of a power management device with a capability of a first power device. If the energy requirement is greater than the energy requirement of the first power device, the energy is switched to a second power device of higher capacity. The apparatus includes: a first power device; a second power device connected in parallel to the first power device; a first inductor connected to the first power device and a capacitor connected to the first inductor; and a second inductor connected to a second power device and a capacitor connected to the second inductor.Type: GrantFiled: February 19, 2013Date of Patent: August 25, 2015Assignee: QUALCOMM IncorporatedInventors: Adrian M Stenzel, Todd R Sutton, Narendra Singh Mehta, Siegfried W Breitmeier, Gordon P Lee
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Patent number: 8901989Abstract: An adaptive gate drive circuit that can generate a gate bias voltage with temperature compensation for a MOSFET is disclosed. The adaptive gate drive circuit may generate the gate bias voltage with variable drive capability to combat higher gate leakage current of the MOSFET at higher temperature. In one design, an apparatus includes a control circuit and a gate drive circuit. The control circuit generates at least one control signal having a variable frequency determined based on a sensed temperature of the MOSFET. For example, a clock divider ratio may be determined based on the sensed temperature of the MOSFET, an input clock signal may be divided based on the clock divider ratio to obtain a variable clock signal, and the control signal(s) may be generated based on the variable clock signal. The gate drive circuit generates a bias voltage for the MOSFET based on the control signal(s).Type: GrantFiled: March 15, 2013Date of Patent: December 2, 2014Assignee: QUALCOMM IncorporatedInventors: Narendra Singh Mehta, Lennart Karl-Axel Mathe
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Patent number: 8859377Abstract: A method for fabricating a transistor on a semiconductor wafer includes providing a partial transistor containing a gate stack, extension regions, and source/drain sidewalls. The method also includes performing a source/drain implant of the semiconductor wafer, forming a cap layer over the semiconductor wafer, and performing a source/drain anneal. In addition, the method includes performing a damage implant of the cap layer and removing the cap layer over the semiconductor wafer.Type: GrantFiled: June 29, 2007Date of Patent: October 14, 2014Assignee: Texas Instruments IncorporatedInventors: Mahalingam Nandakumar, Wayne Bather, Narendra Singh Mehta
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Publication number: 20140266011Abstract: An electronic device is described. The electronic device includes a first port. The electronic device also includes a second port. The electronic device further includes a multiphase charger. The multiphase charger includes a first buck. The multiphase charger also includes a second buck. The multiphase charger further includes a first port switch. The multiphase charger also includes a second port switch. The multiphase charger further includes a reverse boost switch. The multiphase charger also includes a multiphase switch.Type: ApplicationFiled: March 15, 2013Publication date: September 18, 2014Applicant: QUALCOMM INCORPORATEDInventors: Narendra Singh Mehta, Chris M. Rosolowski, Sandeep Chaman Dhar, Todd R. Sutton
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Publication number: 20140235299Abstract: A method and apparatus for extending the driving capacity of a power management device are provided. The method involves determining an energy requirement for the operation of a power management device. Next, the method compares the energy requirement for the operation of a power management device with a capability of a first power device. If the energy requirement is greater than the energy requirement of the first power device, the energy is switched to a second power device of higher capacity. The apparatus includes: a first power device; a second power device connected in parallel to the first power device; a first inductor connected to the first power device and a capacitor connected to the first inductor; and a second inductor connected to a second power device and a capacitor connected to the second inductor.Type: ApplicationFiled: February 19, 2013Publication date: August 21, 2014Applicant: QUALCOMM INCORPORATEDInventors: Adrian M. Stenzel, Todd R. Sutton, Narendra Singh Mehta, Siegfried W. Breitmeier, Gordon P. Lee
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Publication number: 20140028357Abstract: An adaptive gate drive circuit that can generate a gate bias voltage with temperature compensation for a MOSFET is disclosed. The adaptive gate drive circuit may generate the gate bias voltage with variable drive capability to combat higher gate leakage current of the MOSFET at higher temperature. In one design, an apparatus includes a control circuit and a gate drive circuit. The control circuit generates at least one control signal having a variable frequency determined based on a sensed temperature of the MOSFET. For example, a clock divider ratio may be determined based on the sensed temperature of the MOSFET, an input clock signal may be divided based on the clock divider ratio to obtain a variable clock signal, and the control signal(s) may be generated based on the variable clock signal. The gate drive circuit generates a bias voltage for the MOSFET based on the control signal(s).Type: ApplicationFiled: March 15, 2013Publication date: January 30, 2014Applicant: QUALCOMM IncorporatedInventors: Narendra Singh Mehta, Lennart Karl-Axel Mathe
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Patent number: 7838370Abstract: A method for manufacturing an isolation structure is disclosed that protects the isolation structure during etching of a dichlorosilane (DCS) nitride layer. The method involves the formation of a bis-(t-butylamino)silane-based nitride liner layer within the isolation trench, which exhibits a five-fold greater resistance to nitride etching solutions as compared with DCS nitride, thereby allowing protection against damage from unintended over-etching. The bis-(t-butylamino)silane-based nitride layer also exerts a greater tensile strain on moat regions that results in heightened carrier mobility of active regions, thereby increasing the performance of NMOS transistors embedded therein.Type: GrantFiled: December 27, 2007Date of Patent: November 23, 2010Assignee: Texas Instruments IncorporatedInventors: Narendra Singh Mehta, Wayne Anthony Bather, Ajith Varghese
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Publication number: 20100270622Abstract: The present invention provides a method for manufacturing a semiconductor device as well as a semiconductor device. The method, among other steps, may include forming a gate structure over a substrate, and forming a strain inducing sidewall spacer proximate a sidewall of the gate structure, the strain inducing sidewall configured to introduce strain in a channel region below the gate structure.Type: ApplicationFiled: July 7, 2010Publication date: October 28, 2010Applicant: TEXAS INSTRUMENTS INCORPORATEDInventors: Mahalingam NANDAKUMAR, Wayne A. BATHER, Narendra Singh MEHTA, Lahir Shaik ADAM
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Publication number: 20100252887Abstract: A method for fabricating a transistor on a semiconductor wafer includes providing a partial transistor containing a gate stack, extension regions, and source/drain sidewalls. The method also includes performing a source/drain implant of the semiconductor wafer, forming a cap layer over the semiconductor wafer, and performing a source/drain anneal. In addition, the method includes performing a damage implant of the cap layer and removing the cap layer over the semiconductor wafer.Type: ApplicationFiled: June 17, 2010Publication date: October 7, 2010Applicant: TEXAS INSTRUMENTS INCORPORATEDInventors: Mahalingam Nandakumar, Wayne Bather, Narendra Singh Mehta
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Patent number: 7772094Abstract: A method for semiconductor processing is provided, wherein a removal of one or more layers is aided by structurally weakening the one or more layers via ion implantation. A semiconductor substrate is provided having one or more primary layers formed thereon, and a secondary layer is formed over the one or more primary layers. One or more ion species are implanted into the secondary layer, therein structurally weakening the secondary layer, and a patterned photoresist layer is formed over the secondary layer. Respective portions of the secondary layer and the one or more primary layers that are not covered by the patterned photoresist layer are removed, and the patterned photoresist layer is further removed. At least another portion of the secondary layer is removed, wherein the structural weakening of the secondary layer increases a removal rate of the at least another portion of the secondary layer.Type: GrantFiled: December 29, 2008Date of Patent: August 10, 2010Assignee: Texas Instuments IncorporatedInventors: Mahalingam Nandakumar, Wayne Bather, Narendra Singh Mehta
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Patent number: 7696021Abstract: A method of manufacturing a semiconductor device including calibrating an ion implant process. The calibration includes forming a dielectric layer over a calibration substrate. A dopant is implanted into the dielectric layer. Charge is deposited on a surface of the dielectric layer, and voltage on the surface is measured. An electrical characteristic of the dielectric layer is determined, and a doping level of the dielectric layer is determined from the electrical characteristic. The electrical characteristic is associated with an operating set-point of the ion implant process. The calibrated ion implant process is used to implant the dopant into a semiconductor substrate.Type: GrantFiled: November 13, 2006Date of Patent: April 13, 2010Assignee: Texas Instruments IncorporatedInventors: Narendra Singh Mehta, Ajith Varghese, Benjamin Moser
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Publication number: 20090170277Abstract: A method for semiconductor processing is provided, wherein a removal of one or more layers is aided by structurally weakening the one or more layers via ion implantation. A semiconductor substrate is provided having one or more primary layers formed thereon, and a secondary layer is formed over the one or more primary layers. One or more ion species are implanted into the secondary layer, therein structurally weakening the secondary layer, and a patterned photoresist layer is formed over the secondary layer. Respective portions of the secondary layer and the one or more primary layers that are not covered by the patterned photoresist layer are removed, and the patterned photoresist layer is further removed. At least another portion of the secondary layer is removed, wherein the structural weakening of the secondary layer increases a removal rate of the at least another portion of the secondary layer.Type: ApplicationFiled: December 29, 2008Publication date: July 2, 2009Applicant: Texas Instruments IncorporatedInventors: Mahalingam Nandakumar, Wayne Bather, Narendra Singh Mehta
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Publication number: 20090130864Abstract: An embodiment generally relates a method of processing semiconductor devices. The method includes forming a semiconductor device and exposing the semiconductor device to a temperature substantially between 1175 to 1375 degrees Celsius after the formation of a gate dielectric layer. The method also includes annealing the semiconductor device for a period of time.Type: ApplicationFiled: November 19, 2007Publication date: May 21, 2009Inventors: Narendra Singh MEHTA, Perry Howard Shields, Amitabh Jain
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Publication number: 20090045472Abstract: A semiconductor device includes source/drain regions formed in a substrate and having a concentration of nitrogen of at least about 5E18 cm?3. A gate dielectric is located over the substrate and between the source/drain regions. Gate sidewall spacers are located over said source/drain regions. A nitrogen-doped electrode including polysilicon is located over the gate dielectric. The electrode has a concentration of nitrogen therein greater than the concentration of nitrogen in the source/drain regions.Type: ApplicationFiled: August 13, 2007Publication date: February 19, 2009Applicant: Texas Instruments IncorporatedInventors: Srinivasan Chakravarthi, Narendra Singh Mehta, Rajesh Khamankar, Ajith Varghese, Malcolm J. Bevan, Tad Grider
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Publication number: 20090004805Abstract: A method for fabricating a transistor on a semiconductor wafer includes providing a partial transistor containing a gate stack, extension regions, and source/drain sidewalls. The method also includes performing a source/drain implant of the semiconductor wafer, forming a cap layer over the semiconductor wafer, and performing a source/drain anneal. In addition, the method includes performing a damage implant of the cap layer and removing the cap layer over the semiconductor wafer.Type: ApplicationFiled: June 29, 2007Publication date: January 1, 2009Applicant: TEXAS INSTRUMENTS INCORPORATEDInventors: Mahalingam Nandakumar, Wayne Bather, Narendra Singh Mehta
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Publication number: 20080251864Abstract: A method for implementing a stacked gate, comprising forming a gate dielectric on a semiconductor body, forming a first layer of gate electrode material on the gate dielectric, forming a second layer of gate electrode material on the first layer of gate electrode material, wherein the grain size distribution of the first layer of gate electrode material is different than the grain size distribution of the second layer of gate electrode material, implanting the first and second gate electrode materials, patterning the first and the second gate electrodes and the gate dielectric, and forming source and drain regions.Type: ApplicationFiled: April 11, 2007Publication date: October 16, 2008Inventors: Yuanning Chen, Stephanie W. Butler, Ajith Varghese, Narendra Singh Mehta