Abstract: An infrared LED device comprising a plurality of LED mesas; each mesa being approximately 25 to 500 microns separated by a gap of approximately 50 to 100 microns; each mesa having at least two indium contacts; a substrate; and a plurality of leads for connection to the contacts, whereby upon application of electrical power infrared light emission occurs. The method of making comprises providing a first substrate; using molecular beam epitaxy, growing a quantum well structure comprising alternating active and injection regions on the substrate; growing a thin p-type layer on the quantum well structure; etching the mesa area down to the substrate to form a plurality of mesas, forming first electrical contacts; deep etching to isolate each of the mesas; depositing first indium contacts on the mesas; providing a second substrate; depositing second electrical contacts; bonding the first and second substrates at the points of the electrical contacts.