Patents by Inventor Naresh K. Penta

Naresh K. Penta has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Tunable Polish Rates By Varying Dissolved Oxygen Content
    Publication number: 20140299271
    Abstract: A system for tunable removal rates and selectivity of materials during chemical-mechanical polishing using a chemical slurry or solution with increased dissolved oxygen content. The slurry can optionally include additives to improve removal rate and/or selectivity. Further selectivity can be obtained by varying the concentration and type of abrasives in the slurry, using lower operating pressure, using different pads, or using other additives in the dispersion at specific pH values.
    Type: Application
    Filed: June 19, 2014
    Publication date: October 9, 2014
    Applicant: CLARKSON UNIVERSITY
    Inventors: P.R. Veera Dandu, Naresh K. Penta, Babu V. Suryadevara, Uma Rames Krishna Lagudu
  • Tunable polish rates by varying dissolved oxygen content
    Patent number: 8778203
    Abstract: A method and system for tunable removal rates and selectivity of materials during chemical-mechanical polishing using a chemical slurry or solution with increased dissolved oxygen content. The slurry can optionally include additives to improve removal rate and/or selectivity. Further selectivity can be obtained by varying the concentration and type of abrasives in the slurry, using lower operating pressure, using different pads, or using other additives in the dispersion at specific pH values.
    Type: Grant
    Filed: May 31, 2011
    Date of Patent: July 15, 2014
    Assignee: Clarkson University
    Inventors: P. R. Veera Dandu, Naresh K. Penta, Babu V. Suryadevara, Uma Rames Krishna Lagudu
  • Abrasive Free Silicon Chemical Mechanical Planarization
    Publication number: 20120190200
    Abstract: A chemical mechanical planarization method uses a chemical mechanical planarization composition that includes at least one nitrogen containing material and a pH modifying material, absent an abrasive material. The nitrogen containing material may be selected from a particular group of nitrogen containing polymers and corresponding nitrogen containing monomers. The chemical mechanical planarization method and the chemical mechanical planarization composition provide for planarizing a silicon material layer, such as but not limited to a poly-Si layer, in the presence of a silicon containing dielectric material layer, such as but not limited to a silicon oxide layer or a silicon nitride layer, with enhanced efficiency provided by an enhanced removal rate ratio.
    Type: Application
    Filed: January 24, 2012
    Publication date: July 26, 2012
    Applicant: CLARKSON UNIVERSITY
    Inventors: Naresh K. Penta, Suryadevara V. Babu
  • Tunable Polish Rates By Varying Dissolved Oxygen Content
    Publication number: 20110294404
    Abstract: A method and system for tunable removal rates and selectivity of materials during chemical-mechanical polishing using a chemical slurry or solution with increased dissolved oxygen content. The slurry can optionally include additives to improve removal rate and/or selectivity. Further selectivity can be obtained by varying the concentration and type of abrasives in the slurry, using lower operating pressure, using different pads, or using other additives in the dispersion at specific pH values.
    Type: Application
    Filed: May 31, 2011
    Publication date: December 1, 2011
    Applicant: CLARKSON UNIVERSITY
    Inventors: P.R. Veera Dandu, Naresh K. Penta, Babu V. Suryadevara, Uma Rames Krishna Lagudu