Abstract: The present invention provides aqueous chemical mechanical planarization polishing (CMP polishing) compositions comprising one or more dispersions of a plurality of elongated, bent or nodular anionic functional colloidal silica particles or their mixture with one or more dispersions of anionic functional spherical colloidal silica particles, one or more amine carboxylic acids having an isoelectric point (pI) below 5, preferably, an acidic amino acid or pyridine acid, and, preferably, one or more ethoxylated anionic surfactants having a C6 to C16 alkyl, aryl or alkylaryl hydrophobic group, wherein the compositions have a pH of from 3 to 5. The compositions enable good silicon nitride removal and selectivity of nitride to oxide removal in polishing.

Abstract: An acid chemical mechanical polishing composition polishes silicon nitride over silicon dioxide and simultaneously inhibits damage to the silicon dioxide. The acid chemical mechanical polishing composition includes polyvinylpyrrolidone polymers, anionic functional colloidal silica abrasive particles and an amine carboxylic acid. The pH of the acid chemical mechanical polishing composition is 5 or less.

Abstract: An acid chemical mechanical polishing composition polishes silicon nitride over silicon dioxide and simultaneously inhibits damage to the silicon dioxide. The acid chemical mechanical polishing composition includes polyvinylpyrrolidone polymers, anionic functional colloidal silica abrasive particles and an amine carboxylic acid. The pH of the acid chemical mechanical polishing composition is 5 or less.

Abstract: The present invention provides aqueous chemical mechanical planarization (CMP) polishing compositions that comprise a mixture of (a) one or more alkoxylated diamines having a number average molecular weight (Mn) of from 1,000 to 20,000, or, preferably, from 1000-15000 and having four (poly)alkoxy ether groups each containing from 5 to 100 alkoxy repeat units; (b) from 0.01 to 2 wt. % or, preferably, from 0.1 to 1.5 wt. %, as solids, based on the total weight of the compositions, of one or more aqueous dispersions of elongated, bent or nodular colloidal silica particles, preferably, having a secondary particle size as determined by dynamic light scattering (DLS) of from 20 to 60 nm; and (c) ammonia or an amine base, wherein the compositions have a pH ranging from 9 to 11. The compositions are substantially free of metals, such as alkali or alkaline earth metals that can damage substrates in polishing.

Abstract: Acid chemical mechanical polishing compositions and methods have enhanced defect inhibition and selectively polish silicon nitride over silicon dioxide in an acid environment. The acid chemical mechanic polishing compositions include poly(2-ethyl-2-oxazoline) polymers, anionic functional colloidal silica particles, amine carboxylic acids and have a pH of 5 or less.

Abstract: The present invention provides aqueous chemical mechanical planarization polishing (CMP polishing) compositions, such as for semiconductor substrates, comprising an abrasive of one or more dispersions of elongated, bent or nodular colloidal silica particles which contain a cationic nitrogen atom, and one or more amine carboxylic acids having an isoelectric point (pI) below 5, preferably, acidic amine carboxylic acids or pyridine acids, wherein the compositions have a pH of from 2 to 5. The compositions enable polishing at a high oxide:nitride removal rate ratio.

Abstract: Chemical mechanical polishing compositions contain polyethoxylated amines, phosphoric acid or salts thereof, and positively charged nitrogen containing colloidal silica abrasive particles. The chemical mechanical polishing compositions are used in polishing methods for suppressing the removal rate of amorphous silicon while maintaining tunable oxide to silicon nitride removal rate ratios. The chemical mechanical polishing compositions can be used in front-end-of line semiconductor processing.

Abstract: A chemical mechanical polishing composition for polishing silicon dioxide over silicon nitride includes certain acidic heterocyclic nitrogen compounds having a pK value of 5 of less. Also, methods for polishing a substrate to remove some of the silicon dioxide and silicon nitride are disclosed.

Abstract: The present invention provides aqueous chemical mechanical planarization polishing (CMP polishing) compositions comprising one or more dispersions of aqueous colloidal silica particles, preferably, spherical colloidal silica particles, one or more amine carboxylic acids having an isolectric point (pI) below 5, preferably, an acidic amino acid or a pyridine acid, and one or more ethoxylated anionic surfactants having a C6 to C10 alkyl, aryl or alkylaryl hydrophobic group, wherein the compositions have a pH of from 3 to 5. The compositions enable good silicon nitride removal and selectivity of nitride to oxide removal in polishing.

Abstract: The present invention provides aqueous chemical mechanical planarization (CMP) polishing compositions comprising one or more dispersions of colloidal silica particles having a zeta potential of from +5 to +50 mV and having one or more aminosilane group, preferably, elongated, bent or nodular colloidal silica particles, or, more preferably, such particles which contain a cationic nitrogen atom, and at least one amine heterocycle carboxylic acid having an isolectric point (pI) of from 2.5 to 5, preferably, from 3 to 4. The compositions have a pH of from 2.5 to 5.3. Preferably, the amine heterocycle carboxylic acid is an amine-containing heterocyclic monocarboxylic acid, such as nicotinic acid, picolinic acid, or isonicotinic acid. The compositions enable enhanced oxide:nitride removal rate ratios.

Abstract: The present invention provides aqueous chemical mechanical planarization (CMP) polishing compositions that comprise a mixture of (a) one or more alkoxylated diamines having a number average molecular weight (Mn) of from 1,000 to 20,000, or, preferably, from 1000-15000 and having four (poly)alkoxy ether groups each containing from 5 to 100 alkoxy repeat units; (b) from 0.01 to 2 wt. % or, preferably, from 0.1 to 1.5 wt. %, as solids, based on the total weight of the compositions, of one or more aqueous dispersions of elongated, bent or nodular colloidal silica particles, preferably, having a secondary particle size as determined by dynamic light scattering (DLS) of from 20 to 60 nm; and (c) ammonia or an amine base, wherein the compositions have a pH ranging from 9 to 11. The compositions are substantially free of metals, such as alkali or alkaline earth metals that can damage substrates in polishing.

Abstract: The present invention provides aqueous CMP polishing compositions comprising a from 0.5 to 30 wt. %, based on the total weight of the composition of a dispersion of a plurality of elongated, bent or nodular silica particles which contain a cationic nitrogen atom, and from 0.001 to 0.5 wt. %, preferably from 10 to 500 ppm, of a cationic copolymer of a diallylamine salt having a cationic amine group, such as a diallylammonium halide, or a diallylalkylamine salt having a cationic amine group, such as a diallylalkylammonium salt, or mixtures of the copolymers, wherein the compositions have a pH of from 1 to 4.5. Preferably, the cationic copolymer of a diallylamine salt having a cationic amine group comprises a copolymer of diallylammonium chloride and sulfur dioxide and the copolymer of the diallylalkylamine salt having a cationic amine group comprises a copolymer of diallylmonomethylammonium halide, e.g. chloride, and sulfur dioxide.

Abstract: The present invention provides aqueous chemical mechanical planarization polishing (CMP polishing) compositions, such as for semiconductor substrates, comprising an abrasive of one or more dispersions of elongated, bent or nodular colloidal silica particles which contain a cationic nitrogen atom, and one or more amine carboxylic acids having an isoelectric point (pI) below 5, preferably, acidic amine carboxylic acids or pyridine acids, wherein the compositions have a pH of from 2 to 5. The compositions enable polishing at a high oxide:nitride removal rate ratio.

Abstract: The present invention provides aqueous chemical mechanical planarization (CMP) polishing compositions comprising one or more dispersions of colloidal silica particles having a zeta potential of from +5 to +50 mV and having one or more aminosilane group, preferably, elongated, bent or nodular colloidal silica particles, or, more preferably, such particles which contain a cationic nitrogen atom, and at least one amine heterocycle carboxylic acid having an isolectric point (pI) of from 2.5 to 5, preferably, from 3 to 4. The compositions have a pH of from 2.5 to 5.3. Preferably, the amine heterocycle carboxylic acid is an amine-containing heterocyclic monocarboxylic acid, such as nicotinic acid, picolinic acid, or isonicotinic acid. The compositions enable enhanced oxide:nitride removal rate ratios.

Abstract: The present invention provides aqueous chemical mechanical planarization polishing (CMP polishing) compositions comprising one or more dispersions of a plurality of elongated, bent or nodular anionic functional colloidal silica particles or their mixture with one or more dispersions of anionic functional spherical colloidal silica particles, one or more amine carboxylic acids having an isoelectric point (pI) below 5, preferably, an acidic amino acid or pyridine acid, and, preferably, one or more ethoxylated anionic surfactants having a C6 to C16 alkyl, aryl or alkylaryl hydrophobic group, wherein the compositions have a pH of from 3 to 5. The compositions enable good silicon nitride removal and selectivity of nitride to oxide removal in polishing.

Abstract: The present invention provides aqueous chemical mechanical planarization polishing (CMP polishing) compositions comprising one or more dispersions of aqueous colloidal silica particles, preferably, spherical colloidal silica particles, one or more amine carboxylic acids having an isolectric point (pI) below 5, preferably, an acidic amino acid or a pyridine acid, and one or more ethoxylated anionic surfactants having a C6 to C10 alkyl, aryl or alkylaryl hydrophobic group, wherein the compositions have a pH of from 3 to 5. The compositions enable good silicon nitride removal and selectivity of nitride to oxide removal in polishing.

Abstract: The present invention provides aqueous CMP polishing compositions comprising a from 0.5 to 30 wt. %, based on the total weight of the composition of a dispersion of a plurality of elongated, bent or nodular colloidal silica particles which contain a cationic nitrogen atom, and from 0.001 to 0.5 wt. %, preferably from 10 to 500 ppm, of a cationic copolymer of a diallyldimethylammonium salt, such as a diallyldimethylammonium halide, wherein the compositions have a pH of from 1 to 4.5. Preferably, the cationic copolymer of a diallyldimethylammonium salt comprises a copolymer of diallyldimethylammonium chloride (DADMAC) and sulfur dioxide. The slurry compositions demonstrate good oxide selectivity in the CMP polishing of pattern wafers having nitride and silicon patterns.

Abstract: The present invention provides aqueous CMP polishing compositions comprising a from 0.5 to 30 wt. %, based on the total weight of the composition of a dispersion of a plurality of elongated, bent or nodular silica particles which contain a cationic nitrogen atom, and from 0.001 to 0.5 wt. %, preferably from 10 to 500 ppm, of a cationic copolymer of a diallylamine salt having a cationic amine group, such as a diallylammonium halide, or a diallylalkylamine salt having a cationic amine group, such as a diallylalkylammonium salt, or mixtures of the copolymers, wherein the compositions have a pH of from 1 to 4.5. Preferably, the cationic copolymer of a diallylamine salt having a cationic amine group comprises a copolymer of diallylammonium chloride and sulfur dioxide and the copolymer of the diallylalkylamine salt having a cationic amine group comprises a copolymer of diallylmonomethylammonium halide, e.g. chloride, and sulfur dioxide.

Abstract: The present invention provides aqueous CMP polishing compositions comprising a from 0.5 to 30 wt. %, based on the total weight of the composition of a dispersion of a plurality of elongated, bent or nodular colloidal silica particles which contain a cationic nitrogen atom, and from 0.001 to 0.5 wt. %, preferably from 10 to 500 ppm, of a cationic copolymer of a diallyldimethylammonium salt, such as a diallyldimethylammonium halide, wherein the compositions have a pH of from 1 to 4.5. Preferably, the cationic copolymer of a diallyldimethylammonium salt comprises a copolymer of diallyldimethylammonium chloride (DADMAC) and sulfur dioxide. The slurry compositions demonstrate good oxide selectivity in the CMP polishing of pattern wafers having nitride and silicon patterns.

Abstract: The present invention provides aqueous chemical mechanical planarization (CMP) polishing compositions that comprise a mixture of one or more surfactants chosen from an amine alkoxylate, an ammonium alkoxylate, or mixtures thereof, and colloidal silica particles having at least one cationic species, the colloidal silica particles being present in the amount of from 1 to 30 wt. %, as solids based on the total weight of the composition, and the compositions having a pH ranging from 2 to 6. The surfactants have a hydrophobic tail. The CMP polishing compositions exhibit tunable oxide:polysilicon and oxide:nitride removal rate ratios and reduce both silicon nitride and polysilicon removal rates significantly without significantly reducing dielectric (e.g. TEOS) removal rates.