Abstract: Described herein are methods and systems useful in the fabrication of ultrasound transducer devices. Fabrication of ultrasound transducer devices can comprise manipulation of components having extremely small cross-sectional thicknesses, which can increase the risk of damage to the components. For example, inadvertent application of forces sufficient to damage such components is a significant risk during fabrication steps. As described herein, the risk of damage to an ultrasound transducer device component having a small cross-sectional thickness, such as an ultrasound microelectromechanical system (MEMS) wafer, can be reduced by partially or completely coating or filling all or a portion of the component with a stabilizing material, for example, prior to subjecting the component to forces associated with manipulation of the component during the fabrication process.

Abstract: Disclosed is a multi-silicon on insulator (SOI) micromachined ultrasonic transducer (MUT) device. The device comprises a multi-SOI substrate and a MUT. The MUT is affixed to a surface of the multi-SOI substrate. The multi-SOI substrate has a first SOI layer and at least a second SOI layer disposed above the first SOI layer. The first SOI layer and the second SOI layer each comprise an insulating layer and a semiconducting layer. The first SOI layer further defines a cavity located under a membrane of a MUT and one or more trenches at least partially around a perimeter of the cavity.