Abstract: An abrasive article is provided that may include a body. The body may include a bond component and abrasive particles within the bond component. The bond component may include a Fe—Co—Cu—Ni—Sn based bond material and a performance enhancing material. The performance enhancing material may include hex-boron nitride. The content of the performance enhancing material may be at least about 6 vol. % and not greater than about 14 vol. % for a total volume of the bond component.

Abstract: An abrasive article including a bonded abrasive body coupled to a core, the core includes a composite material including an organic material and a metallic material, and the composite material includes at least a first filler that can include nitrides, carbides, borides, oxides, silicates, or a combination thereof.

Abstract: An abrasive article including a bonded abrasive body coupled to a core, the core includes a composite material including an organic material and a metallic material, and the composite material includes at least a first filler that can include nitrides, carbides, borides, oxides, silicates, or a combination thereof.

Abstract: An abrasive article is provided that may include a body. The body may include a bond component and abrasive particles within the bond component. The bond component may include a Fe—Co—Cu—Ni—Sn based bond material and a performance enhancing material. The performance enhancing material may include hex-boron nitride. The content of the performance enhancing material may be at least about 6 vol. % and not greater than about 14 vol. % for a total volume of the bond component.

Abstract: A core drill bit assembly is disclosed and includes a shank in which a support sleeve can be removably engage. A core tube can be installed around the support sleeve within the shank. The core tube is removably engaged with the shank and the support sleeve.

Abstract: An abrasive article including a bonded abrasive body coupled to a core, the core includes a composite material including an organic material and a metallic material, and the composite material includes at least a first filler that can include nitrides, carbides, borides, oxides, silicates, or a combination thereof.

Abstract: An ohmic contact to a III-V semiconductor material is fabricated by dry etching a silicon nitride layer overlying the III-V semiconductor material with a chemical comprised of a group VI element. An ohmic metal layer is formed on the III-V semiconductor material after the silicon nitride layer is etched and before any exposure of the III-V semiconductor material to a chemical which etches the III-V semiconductor material or removes the group VI element.

Abstract: An etch stop layer prevents damage to the underlying semiconductor material or metallization layer during etching of a dielectric layer overlying the etch stop layer. The etch stop layer, aluminum nitride or aluminum oxide is used underlying silicon dioxide to prevent damage to the semiconductor material during a fluorocarbon based etch of the silicon dioxide. The etch stop layer is also used underlying a silicon dioxide layer and overlying a titanium nitride or titanium tungsten layer used in metallization to prevent etching of the titanium nitride or titanium tungsten layer during etching of the silicon dioxide.