Abstract: A device for measuring forces and a method of making the same. The device has a boss structure within a diaphragm cavity, wherein the boss structure has substantially parallel sidewalls. One or more sensors are installed proximate to the diaphragm to sense flexure in the diaphragm, which is controlled by the boss structure.

Abstract: A device for measuring forces and a method of making the same is disclosed. The device comprises a boss structure within a diaphragm cavity, wherein the boss structure has substantially parallel sidewalls. One or more sensors are installed proximate to the diaphragm to sense flexure in the diaphragm, which is controlled by the boss structure.

Abstract: A sensor and method for fabricating a sensor is disclosed that in one embodiment bonds an etched semiconductor substrate wafer to an etched first device wafer comprising a silicon on insulator wafer which is then bonded to a second device wafer comprising a silicon on insulator wafer to create a vented, suspended structure, the flexure of which is sensed by an embedded sensing element to measure differential pressure. In one embodiment, interconnect channels embedded in the sensor facilitate streamlined packaging of the device while accommodating interconnectivity with other devices.

Abstract: A method for fabricating a sensor is disclosed that in one embodiment bonds an etched semiconductor substrate wafer to an etched device wafer comprising a double silicon on insulator wafer to create a suspended structure, the flexure of which is sensed by an embedded piezoresistive sensor element. In one embodiment the sensor measures acceleration. In other embodiments the sensor measures pressure.

Abstract: A device for measuring environmental forces, and a method for fabricating the same, is disclosed that comprises a device wafer, the device wafer comprising a first device layer separated from a second device layer by a first insulation layer. The first device wafer is bonded to an etched substrate wafer to create a suspended diaphragm and boss, the flexure of which is determined by an embedded sensing element.

Abstract: A sensor and method for fabricating a sensor is disclosed that in one embodiment bonds an etched semiconductor substrate wafer to an etched device wafer comprising a silicon on insulator wafer to create a suspended structure, the flexure of which is determined by an embedded sensing element to measure absolute pressure. Interconnect channels embedded in the sensor facilitate streamlined packaging of the device while accommodating interconnectivity with other devices.

Abstract: A device for measuring environmental forces, and a method for fabricating the same, is disclosed that comprises a device wafer, the device wafer comprising a first device layer separated from a second device layer by a first insulation layer. The first device wafer is bonded to an etched substrate wafer to create a suspended diaphragm and boss, the flexure of which is determined by an embedded sensing element.

Abstract: A device for preventing corrosion on sensors and a method of fabricating the same is disclosed, wherein the device comprises an insulation layer and an adhesion layer covering a metallization layer of a silicon sensor with a corrosion resistant layer located over the adhesion layer.

Abstract: A sensor and method for fabricating a sensor is disclosed that in one embodiment bonds an etched semiconductor substrate wafer to an etched device wafer comprising a silicon on insulator wafer to create a suspended structure, the flexure of which is determined by an embedded sensing element to measure absolute pressure. Interconnect channels embedded in the sensor facilitate streamlined packaging of the device while accommodating interconnectivity with other devices.

Abstract: A sensor and method for fabricating a sensor is disclosed that in one embodiment bonds an etched semiconductor substrate wafer to an etched first device wafer comprising a silicon on insulator wafer which is then bonded to a second device wafer comprising a silicon on insulator wafer to create a vented, suspended structure, the flexure of which is sensed by an embedded sensing element to measure differential pressure. In one embodiment, interconnect channels embedded in the sensor facilitate streamlined packaging of the device while accommodating interconnectivity with other devices.

Abstract: A method for fabricating a sensor is disclosed that in one embodiment bonds a first device wafer to an etched second device wafer to create a suspended structure, the flexure of which is determined by an embedded sensing element that is in electrical communication with an outer surface of the sensor through an interconnect embedded in a device layer of the first device wafer. In one embodiment the suspended structure is enclosed by a cap and the sensor is configured to measure absolute pressure.

Abstract: A method for fabricating a sensor is disclosed that in one embodiment bonds an etched semiconductor substrate wafer to an etched device wafer comprising a double silicon on insulator wafer to create a suspended structure, the flexure of which is sensed by an embedded piezoresistive sensor element. In one embodiment the sensor measures acceleration. In other embodiments the sensor measures pressure.