Abstract: A thin film transistor array panel includes an oxide semiconductor layer disposed on a substrate and includes a source region, a drain region, and a channel region, a gate insulating layer and a gate electrode disposed on the oxide semiconductor layer, source region, and a drain region, a first passivation layer disposed on the gate electrode, a second passivation layer disposed on the first passivation layer, and a source electrode and a drain electrode disposed on the second passivation, and the source electrode is connected with the source region, the drain electrode is connected with the drain region, the first passivation layer and the second passivation layer include the same metal oxide, and an amount of metal included in the first passivation layer is different from an amount of metal included in the second passivation layer.

Abstract: A thin film transistor is provided. The thin film transistor includes an oxide semiconductor layer including a source region, a drain region, and a channel region wherein a portion of the source and drain regions has an oxygen concentration less than the channel region. Further provided is a thin film transistor that includes an oxide semiconductor layer including a source region, a drain region, and a channel region, wherein a portion of the source and drain regions includes a dopant selected from the group consisting of aluminum, boron, gallium, indium, titanium, silicon, germanium, tin, lead, and combinations thereof.

Abstract: A thin film transistor array panel includes an oxide semiconductor layer disposed on a substrate and includes a source region, a drain region, and a channel region, a gate insulating layer and a gate electrode disposed on the oxide semiconductor layer, source region, and a drain region, a first passivation layer disposed on the gate electrode, a second passivation layer disposed on the first passivation layer, and a source electrode and a drain electrode disposed on the second passivation, and the source electrode is connected with the source region, the drain electrode is connected with the drain region, the first passivation layer and the second passivation layer include the same metal oxide, and an amount of metal included in the first passivation layer is different from an amount of metal included in the second passivation layer.

Abstract: A thin film transistor is provided. The thin film transistor includes an oxide semiconductor layer including a source region, a drain region, and a channel region wherein a portion of the source and drain regions has an oxygen concentration less than the channel region. Further provided is a thin film transistor that includes an oxide semiconductor layer including a source region, a drain region, and a channel region, wherein a portion of the source and drain regions includes a dopant selected from the group consisting of aluminum, boron, gallium, indium, titanium, silicon, germanium, tin, lead, and combinations thereof.

Abstract: A thin film transistor is provided. The thin film transistor includes an oxide semiconductor layer including a source region, a drain region, and a channel region wherein a portion of the source and drain regions has an oxygen concentration less than the channel region. Further provided is a thin film transistor that includes an oxide semiconductor layer including a source region, a drain region, and a channel region, wherein a portion of the source and drain regions includes a dopant selected from the group consisting of aluminum, boron, gallium, indium, titanium, silicon, germanium, tin, lead, and combinations thereof.

Abstract: A display device includes a substrate, a display element, a transistor as a drive element of the display element, and a holding capacitance element holding electric charge corresponding to a video signal, and including a first conductive film, a first semiconductor layer including an oxide semiconductor, an insulating film, and a second conductive film in order of closeness to the substrate. The display element, the transistor, and the holding capacitance element are provided on the substrate.

Abstract: A display device includes a display element, a transistor configured to drive the display element, the transistor including a channel region, and a retention capacitor. An oxide semiconductor film is provided in areas across the transistor and the retention capacitor, the oxide semiconductor film including a first region formed in the channel region of the transistor, and a second region having a lower resistance than that of the first region. The second region is formed in the areas of the transistor and retention capacitor other than in the channel region.

Abstract: A display device includes a display element, a transistor configured to drive the display element, the transistor including a channel region, and a retention capacitor. An oxide semiconductor film is provided in areas across the transistor and the retention capacitor, the oxide semiconductor film including a first region formed in the channel region of the transistor, and a second region having a lower resistance than that of the first region. The second region is formed in the areas of the transistor and retention capacitor other than in the channel region.

Abstract: A display device includes a substrate, a display element, a transistor as a drive element of the display element, and a holding capacitance element holding electric charge corresponding to a video signal, and including a first conductive film, a first semiconductor layer including an oxide semiconductor, an insulating film, and a second conductive film in order of closeness to the substrate. The display element, the transistor, and the holding capacitance element are provided on the substrate.

Abstract: A display device includes a substrate, a display element, a transistor as a drive element of the display element, and a holding capacitance element holding electric charge corresponding to a video signal, and including a first conductive film, a first semiconductor layer including an oxide semiconductor, an insulating film, and a second conductive film in order of closeness to the substrate. The display element, the transistor, and the holding capacitance element are provided on the substrate.

Abstract: A display device includes a substrate, a display element, a transistor as a drive element of the display element, and a holding capacitance element holding electric charge corresponding to a video signal. The display element, the transistor, and the holding capacitance element are provided on the substrate. The holding capacitance element includes a first semiconductor layer including an oxide semiconductor, a first conductive film provided on the first semiconductor layer, a first insulating film provided between the first semiconductor layer and the first conductive film, and a recess formed by removing part or all in thickness of the first conductive film and the first insulating film in a selective region on the first semiconductor layer.

Abstract: Provided is a semiconductor device that includes a transistor. The transistor includes: a gate electrode; an oxide semiconductor film facing the gate electrode and including a first overlapping region that is overlapped with the gate electrode; a low-resistance region provided in the oxide semiconductor film; and a first separation region provided between the low-resistance region and the first overlapping region.

Abstract: A method of manufacturing a transistor includes: forming an oxide semiconductor film and a gate electrode on a substrate, the oxide semiconductor film having a channel region, and the gate electrode facing the channel region; and forming an insulating film covering the gate electrode and the oxide semiconductor film. Infiltration of moisture from the insulating film into the oxide semiconductor film is suppressed by the substrate.

Abstract: Provided is a thin film transistor capable of improving reliability in the thin film transistor including an oxide semiconductor layer. A thin film transistor including: a gate electrode; a gate insulating film formed on the gate electrode; an oxide semiconductor layer forming a channel region corresponding to the gate electrode on the gate insulating film; a channel protective film formed at least in a region corresponding to the channel region on the oxide semiconductor layer; and a source/drain electrode. A top face and a side face of the oxide semiconductor layer are covered with the source/drain electrode and the channel protective layer on the gate insulating film.

Abstract: Provided is a semiconductor device that includes a capacitor. The capacitor includes a hydrogen-containing film that is in contact with an oxide semiconductor film.

Abstract: A thin film transistor is provided. The thin film transistor includes a gate electrode, a gate insulating film, and an oxide semiconductor film, wherein at least a portion of the gate electrode includes a metal oxide. An electric device and a display device that include the thin film transistor are also provided in addition to a manufacture method.

Abstract: A method of manufacturing a transistor includes: forming an oxide semiconductor film and a gate electrode on a substrate, the oxide semiconductor film having a channel region, and the gate electrode facing the channel region; and forming an insulating film covering the gate electrode and the oxide semiconductor film. Infiltration of moisture from the insulating film into the oxide semiconductor film is suppressed by the substrate.

Abstract: A method of manufacturing a transistor includes: forming an oxide semiconductor film and a gate electrode on a substrate, the oxide semiconductor film having a channel region, and the gate electrode facing the channel region; and forming an insulating film covering the gate electrode and the oxide semiconductor film. Infiltration of moisture from the insulating film into the oxide semiconductor film is suppressed by the substrate.

Abstract: Provided is a semiconductor device that includes a transistor. The transistor includes: a gate electrode; an oxide semiconductor film facing the gate electrode and including a first overlapping region that is overlapped with the gate electrode; a low-resistance region provided in the oxide semiconductor film; and a first separation region provided between the low-resistance region and the first overlapping region.

Abstract: A thin film transistor is provided. The thin film transistor includes a gate electrode, a gate insulating film, and an oxide semiconductor film, wherein at least a portion of the gate electrode includes a metal oxide. An electric device and a display device that include the thin film transistor are also provided in addition to a manufacture method.