Patents by Inventor Narjes JAVAHERI

Narjes JAVAHERI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Metrology parameter determination and metrology recipe selection
    Patent number: 11448974
    Abstract: A method of determining a patterning process parameter from a metrology target, the method including: obtaining a plurality of values of diffraction radiation from the metrology target, each value of the plurality of values corresponding to a different illumination condition of a plurality of illumination conditions of illumination radiation for the target; and using the combination of values to determine a same value of the patterning process parameter for the target.
    Type: Grant
    Filed: March 22, 2021
    Date of Patent: September 20, 2022
    Assignee: ASML Netherlands B.V.
    Inventors: Narjes Javaheri, Mohammadreza Hajiahmadi, Olger Victor Zwier, Gonzalo Roberto Sanguinetti
  • METROLOGY METHOD AND ASSOCIATED COMPUTER PRODUCT
    Publication number: 20220252990
    Abstract: Disclosed is a method comprising measuring radiation reflected from a metrology target and decomposing the measured radiation in components, for example Fourier components or spatial components. Further, there is disclosed a recipe selection method which provides an algorithm to select a parameter of the metrology apparatus based on re-calculated dependencies of 5 the measured radiation based on single components.
    Type: Application
    Filed: July 7, 2020
    Publication date: August 11, 2022
    Applicant: ASML Netherlands B,V.
    Inventors: Narjes JAVAHERI, Maurits VAN DER SCHAAR, Tieh-Ming CHANG, Hilko Dirk BOS, Patrick WARNNAR, Samira BAHRAMI, Mohammadreza HAJIAHMADI, Sergey TARABRIN, Mykhailo SEMKIV
  • METROLOGY PARAMETER DETERMINATION AND METROLOGY RECIPE SELECTION
    Publication number: 20210208513
    Abstract: A method of determining a patterning process parameter from a metrology target, the method including: obtaining a plurality of values of diffraction radiation from the metrology target, each value of the plurality of values corresponding to a different illumination condition of a plurality of illumination conditions of illumination radiation for the target; and using the combination of values to determine a same value of the patterning process parameter for the target.
    Type: Application
    Filed: March 22, 2021
    Publication date: July 8, 2021
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Narjes JAVAHERI, Mohammadreza HAJIAHMADI, Olger Victor ZWIER, Gonzalo Roberto SANGUINETTI
  • Metrology parameter determination and metrology recipe selection
    Patent number: 10990020
    Abstract: A method of determining a patterning process parameter from a metrology target, the method including: obtaining a plurality of values of diffraction radiation from the metrology target, each value of the plurality of values corresponding to a different illumination condition of a plurality of illumination conditions of illumination radiation for the target; and using the combination of values to determine a same value of the patterning process parameter for the target.
    Type: Grant
    Filed: April 27, 2018
    Date of Patent: April 27, 2021
    Assignee: ASML Netherlands B.V.
    Inventors: Narjes Javaheri, Mohammadreza Hajiahmadi, Olger Victor Zwier, Gonzalo Roberto Sanguinetti
  • Metrology method and apparatus, computer program and lithographic system
    Patent number: 10705437
    Abstract: Disclosed is a method, and associated apparatuses, for measuring a parameter of interest relating to a structure having at least two layers. The method comprises illuminating the structure with measurement radiation and detecting scattered radiation having been scattered by said structure. The scattered radiation comprises normal and complementary higher diffraction orders. A scatterometry model which relates a scattered radiation parameter to at least a parameter of interest and an asymmetry model which relates the scattered radiation parameter to at least one asymmetry parameter are defined, the asymmetry parameter relating to one or more measurement system errors and/or an asymmetry in the target other than a misalignment between the two layers. A combination of the scatterometry model and asymmetry model is used to determine a system of equations, and the system of equations is then solved for the parameter of interest.
    Type: Grant
    Filed: October 9, 2018
    Date of Patent: July 7, 2020
    Assignee: ASML Netherlands B.V
    Inventors: Narjes Javaheri, Mohammadreza Hajiahmadi, Murat Bozkurt, Alberto Da Costa Assafrao, Marc Johannes Noot, Simon Gijsbert Josephus Mathijssen, Jin Lian
  • Metrology Method and Apparatus, Computer Program and Lithographic System
    Publication number: 20190107785
    Abstract: Disclosed is a method, and associated apparatuses, for measuring a parameter of interest relating to a structure having at least two layers. The method comprises illuminating the structure with measurement radiation and detecting scattered radiation having been scattered by said structure. The scattered radiation comprises normal and complementary higher diffraction orders. A scatterometry model which relates a scattered radiation parameter to at least a parameter of interest and an asymmetry model which relates the scattered radiation parameter to at least one asymmetry parameter are defined, the asymmetry parameter relating to one or more measurement system errors and/or an asymmetry in the target other than a misalignment between the two layers. A combination of the scatterometry model and asymmetry model is used to determine a system of equations, and the system of equations is then solved for the parameter of interest.
    Type: Application
    Filed: October 9, 2018
    Publication date: April 11, 2019
    Applicant: ASML Netherlands B.V.
    Inventors: Narjes JAVAHERI, Mohammadreza Hajiahmadi, Murat Bozkurt, Alberto Da Costa Assafrao, Marc Johannes Noot, Simon Gijsbert Josephus Mathijssen, Jin Lian
  • METROLOGY PARAMETER DETERMINATION AND METROLOGY RECIPE SELECTION
    Publication number: 20180321597
    Abstract: A method of determining a patterning process parameter from a metrology target, the method including: obtaining a plurality of values of diffraction radiation from the metrology target, each value of the plurality of values corresponding to a different illumination condition of a plurality of illumination conditions of illumination radiation for the target; and using the combination of values to determine a same value of the patterning process parameter for the target.
    Type: Application
    Filed: April 27, 2018
    Publication date: November 8, 2018
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Narjes JAVAHERI, Mohammadreza HAJIAHMADI, Olger Victor ZWIER, Gonzalo Roberto SANGUINETTI