Abstract: A radio-frequency module includes a hybrid filter for 5th Generation New Radio (5G-NR) n77, a filter for 5G-NR n79, power amplifiers, a third inductor coupled to the power amplifier, and a fourth inductor coupled to a power amplifier. When a module substrate is viewed in plan view, the power amplifiers are disposed in a first quadrant, the third inductor and the fourth inductor are disposed in a second quadrant, the hybrid filter and the filter are disposed in a third quadrant, the power amplifier is disposed closer to a reference point than the power amplifier, the third inductor is disposed closer to the reference point than the fourth inductor, and the hybrid filter is disposed closer to the reference point than the filter.

Abstract: A radio-frequency module includes a module substrate, a hybrid filter for 5th Generation New Radio (5G-NR) n77 including a first acoustic wave resonator element, a first inductor, and a first capacitor, a filter for 5G-NR n79 including a second acoustic wave resonator element and a second inductor, power amplifiers, a third inductor coupled between the power amplifier and the hybrid filter, and a fourth inductor coupled between the power amplifier and the filter. The first inductor, the second inductor, the third inductor, and the fourth inductor are disposed at a major surface or inside the module substrate. The distance between the first inductor and the third inductor is larger than the distance between the second inductor and the fourth inductor.

Abstract: A radio-frequency module includes a module substrate having main surfaces opposite to each other, a hybrid filter having a first acoustic wave resonator, a first inductor, and a first capacitor, a switch for connecting and disconnecting an antenna connection terminal and the hybrid filter, and a coupler disposed on a path linking the antenna connection terminal and the switch. The first acoustic wave resonator is disposed on the main surface, the switch is included in a semiconductor IC disposed on the main surface, the coupler is disposed inside the module substrate, and in plan view of the module substrate, the semiconductor IC at least partially overlaps the first acoustic wave resonator, and the semiconductor IC and the coupler at least partially overlaps.

Abstract: A radio-frequency module includes a module substrate having main surfaces opposite to each other, a hybrid filter having a first acoustic wave resonator, a first inductor, and a first capacitor, and a first radio-frequency component, wherein a pass band width of the hybrid filter is greater than a resonant band width of the first acoustic wave resonator, one of the first acoustic wave resonator, the first inductor, and the first capacitor is disposed on the main surface, and the first radio-frequency component is disposed on the main surface.

Abstract: A hybrid filter includes a module substrate having a major surface and a major surface that are opposite to each other, acoustic wave resonator elements disposed at the module substrate, inductors disposed at the module substrate, and a capacitor disposed at the module substrate. The pass band of the hybrid filter is wider than the resonance band width of the acoustic wave resonator elements. One of the acoustic wave resonator elements, the inductors, and the capacitor is a first circuit element, and the first circuit element is disposed at the major surface. Another of the acoustic wave resonator elements, the inductors, and the capacitor is a second circuit element, and the second circuit element is disposed at the major surface.

Abstract: A filter module includes a first ground terminal, a second ground terminal, a low pass filter, and a second inductor. The low pass filter includes a first inductor provided in an input/output path of signal, a first capacitor provided in a first path connecting a first node and the first ground terminal, and a second capacitor provided in a second path connecting a second node and the second ground terminal. The second inductor is connected in series to the second capacitor in a path connecting the second capacitor and the second ground terminal. The first path and the second path are not connected to each other by any path except the one between the first node and the second node.

Abstract: A filter module includes a first ground terminal, a second ground terminal, a low pass filter, and a second inductor. The low pass filter includes a first inductor provided in an input/output path of signal, a first capacitor provided in a first path connecting a first node and the first ground terminal, and a second capacitor provided in a second path connecting a second node and the second ground terminal. The second inductor is connected in series to the second capacitor in a path connecting the second capacitor and the second ground terminal. The first path and the second path are not connected to each other by any path except the one between the first node and the second node.

Abstract: A semiconductor package includes the following elements. A high-output switch IC includes an IC top surface on which an electrode is disposed and an IC bottom surface on which no electrode is disposed. A connecting terminal is formed at a position outside a projection region toward a side portion of the semiconductor package. The projection region is a region projected in a thickness direction of the high-output switch IC. A wire electrically connects the electrode and the connecting terminal. A mold resin section covers the IC top surface and the wire and also covers a surface of the connecting terminal to which the wire is connected. A surface of the connecting terminal opposite to the surface to which the wire is connected is not covered with the mold resin section but is exposed. The IC bottom surface is not covered with a metal.