Patents by Inventor Naruaki Minenaga

Naruaki Minenaga has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor storage device, semiconductor device, and manufacturing method therefor
    Patent number: 8039940
    Abstract: According to the present invention, a gettering layer is deposited both on the side surfaces and the bottom surface of a semiconductor chip. The semiconductor chip is then mounted on the board of a package so that a Schottky barrier is formed on the bottom surface. With this structure, metal ions that pass through the board of the package can be captured by the defect layer deposited on the side surfaces and/or the bottom surface of the semiconductor chip, and by the Schottky barrier.
    Type: Grant
    Filed: December 14, 2007
    Date of Patent: October 18, 2011
    Assignee: Renesas Electronics Corporation
    Inventors: Kohji Kanamori, Teiichirou Nishizaka, Noriaki Kodama, Isao Katayama, Yoshihiro Matsuura, Kaoru Ishihara, Yasushi Harada, Naruaki Minenaga, Chihiro Oshita
  • Semiconductor storage device, semiconductor device, and manufacturing method therefor
    Patent number: 7790579
    Abstract: According to the present invention, a gettering layer is deposited both on the side surfaces and the bottom surface of a semiconductor chip. The semiconductor chip is then mounted on the board of a package so that a Schottky barrier is formed on the bottom surface. With this structure, metal ions that pass through the board of the package can be captured by the defect layer deposited on the side surfaces and/or the bottom surface of the semiconductor chip, and by the Schottky barrier.
    Type: Grant
    Filed: April 6, 2006
    Date of Patent: September 7, 2010
    Assignee: NEC Electronics Corporation
    Inventors: Kohji Kanamori, Teiichirou Nishizaka, Noriaki Kodama, Isao Katayama, Yoshihiro Matsuura, Kaoru Ishihara, Yasushi Harada, Naruaki Minenaga, Chihiro Oshita
  • SEMICONDUCTOR STORAGE DEVICE, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREFOR
    Publication number: 20080099883
    Abstract: According to the present invention, a gettering layer is deposited both on the side surfaces and the bottom surface of a semiconductor chip. The semiconductor chip is then mounted on the board of a package so that a Schottky barrier is formed on the bottom surface. With this structure, metal ions that pass through the board of the package can be captured by the defect layer deposited on the side surfaces and/or the bottom surface of the semiconductor chip, and by the Schottky barrier.
    Type: Application
    Filed: December 14, 2007
    Publication date: May 1, 2008
    Applicant: NEC ELECTRONICS CORPORATION
    Inventors: Kohji KANAMORI, Teiichirou Nishizaka, Noriaki Kodama, Isao Katayama, Yoshihiro Matsuura, Kaoru Ishihara, Yasushi Harada, Naruaki Minenaga, Chihiro Oshita
  • Semiconductor device of a charge storage type
    Patent number: 7327019
    Abstract: According to the present invention, a gettering layer is deposited both on the side surfaces and the bottom surface of a semiconductor chip. The semiconductor chip is then mounted on the board of a package so that a Schottky barrier is formed on the bottom surface. With this structure, metal ions that pass through the board of the package can be captured by the defect layer deposited on the side surfaces and/or the bottom surface of the semiconductor chip, and by the Schottky barrier.
    Type: Grant
    Filed: March 14, 2005
    Date of Patent: February 5, 2008
    Assignee: NEC Electronics Corporation
    Inventors: Kohji Kanamori, Teiichirou Nishizaka, Noriaki Kodama, Isao Katayama, Yoshihiro Matsuura, Kaoru Ishihara, Yasushi Harada, Naruaki Minenaga, Chihiro Oshita
  • Semiconductor storage device, semiconductor device, and manufacturing method therefor
    Publication number: 20060180891
    Abstract: According to the present invention, a gettering layer is deposited both on the side surfaces and the bottom surface of a semiconductor chip. The semiconductor chip is then mounted on the board of a package so that a Schottky barrier is formed on the bottom surface. With this structure, metal ions that pass through the board of the package can be captured by the defect layer deposited on the side surfaces and/or the bottom surface of the semiconductor chip, and by the Schottky barrier.
    Type: Application
    Filed: April 6, 2006
    Publication date: August 17, 2006
    Applicant: NEC ELECTRONICS CORPORATION
    Inventors: Kohji Kanamori, Teiichirou Nishizaka, Noriaki Kodama, Isao Katayama, Yoshihiro Matsuura, Kaoru Ishihara, Yasushi Harada, Naruaki Minenaga, Chihiro Oshita
  • Semiconductor storage device, semiconductor device, and manufacturing method therefor
    Publication number: 20050218490
    Abstract: According to the present invention, a gettering layer is deposited both on the side surfaces and the bottom surface of a semiconductor chip. The semiconductor chip is then mounted on the board of a package so that a Schottky barrier is formed on the bottom surface. With this structure, metal ions that pass through the board of the package can be captured by the defect layer deposited on the side surfaces and/or the bottom surface of the semiconductor chip, and by the Schottky barrier.
    Type: Application
    Filed: March 14, 2005
    Publication date: October 6, 2005
    Applicant: NEC ELECTRONICS CORPORATION
    Inventors: Kohji Kanamori, Teiichirou Nishizaka, Noriaki Kodama, Isao Katayama, Yoshihiro Matsuura, Kaoru Ishihara, Yasushi Harada, Naruaki Minenaga, Chihiro Oshita