Abstract: A grindstone includes abrasive grains and a binder for fixing the abrasive grains, and the binder contains a spherical filler for reinforcing the bonding material.

Abstract: There is provided a base-integrated blade manufacturing method for manufacturing a base-integrated blade by fixing a cutting blade having a circular opening to a base having an annular projection. The method includes a first step of preparing the base having the projection that has an outside diameter greater than a diameter of the opening of the cutting blade, and the cutting blade, a second step of lowering a temperature of the base and thus shrinking the base to have the outside diameter of the projection smaller than the diameter of the opening of the cutting blade, a third step of inserting the projection into the opening of the cutting blade, and a fourth step of raising the temperature of the base and thus expanding the base in such a manner that the cutting blade is fixed to the base.

Abstract: There is provided a base-integrated blade manufacturing method for manufacturing a base-integrated blade by fixing a cutting blade having a circular opening to a base having an annular projection. The method includes a first step of preparing the base having the projection that has an outside diameter greater than a diameter of the opening of the cutting blade, and the cutting blade, a second step of lowering a temperature of the base and thus shrinking the base to have the outside diameter of the projection smaller than the diameter of the opening of the cutting blade, a third step of inserting the projection into the opening of the cutting blade, and a fourth step of raising the temperature of the base and thus expanding the base in such a manner that the cutting blade is fixed to the base.

Abstract: There is provided a polishing tool for polishing a wafer. The polishing tool includes a base and a polishing layer fixed to the base. The polishing layer includes an electrically conductive material dispersed therein to eliminate static electricity generated when the polishing layer comes into contact with the wafer. Preferably, the electrically conductive material is carbon fiber, and the carbon fiber is included at a content of 3 wt % or more but 15 wt % or less.

Abstract: A polishing method for polishing a wafer by use of a polishing unit having a spindle with a polishing tool, the polishing tool having a disk-shaped base and an annular polishing layer that is fixed to one surface of the base and that includes an opening being located at a central portion in a diameter direction of the base and having a predetermined diameter, a maximum width of an effective polishing region of the polishing layer in a radial direction of the base being smaller than the radius of the wafer and the radius of the wafer being smaller than the diameter of the opening, the method includes polishing the wafer in such a manner that a part of a peripheral edge of the wafer protrudes from a periphery of the polishing layer and that the center of the wafer is located in the opening section of the polishing layer.

Abstract: A gettering property evaluating method for a wafer includes: a gettering layer forming step of polishing a back surface opposite to a front surface of a semiconductor wafer by use of a polishing wheel to form polishing marks on the back surface and to form a gettering layer inside the semiconductor wafer and beneath the polishing marks; an imaging step of imaging at least a unit region of the back surface formed with the polishing marks by imaging means; a counting step of counting the number of the polishing marks having a width of 10 to 500 nm present in the unit region imaged; and a comparing step of comparing the number of the polishing marks counted by the counting step with a predetermined value to determine whether or not the counted number is not less than the predetermined value.

Abstract: A gettering property evaluating method for a wafer includes: a gettering layer forming step of polishing a back surface opposite to a front surface of a semiconductor wafer by use of a polishing wheel to form polishing marks on the back surface and to form a gettering layer inside the semiconductor wafer and beneath the polishing marks; an imaging step of imaging at least a unit region of the back surface formed with the polishing marks by imaging means; a counting step of counting the number of the polishing marks having a width of 10 to 500 nm present in the unit region imaged; and a comparing step of comparing the number of the polishing marks counted by the counting step with a predetermined value to determine whether or not the counted number is not less than the predetermined value.

Abstract: A grinding method for grinding a plurality of platelike workpieces at a time is provided. The workpieces are attached to a support member and held on a chuck table. A grinding wheel is brought into contact with the workpieces to grind the workpieces at a time. The grinding wheel includes a disk-shaped wheel base having a first surface, a plurality of first abrasive members arranged annularly on the first surface of the wheel base, and a plurality of second abrasive members arranged annularly on the first surface of the wheel base radially inside the first abrasive members in a concentric relationship with the first abrasive members. The radial spacing between the first abrasive members and the second abrasive members is set larger than the minimum spacing between any adjacent ones of the workpieces.

Abstract: A grinding method for grinding a plurality of platelike workpieces at a time is provided. The workpieces are attached to a support member and held on a chuck table. A grinding wheel is brought into contact with the workpieces to grind the workpieces at a time. The grinding wheel includes a disk-shaped wheel base having a first surface, a plurality of first abrasive members arranged annularly on the first surface of the wheel base, and a plurality of second abrasive members arranged annularly on the first surface of the wheel base radially inside the first abrasive members in a concentric relationship with the first abrasive members. The radial spacing between the first abrasive members and the second abrasive members is set larger than the minimum spacing between any adjacent ones of the workpieces.

Abstract: In a semiconductor wafer processing method of forming a semiconductor wafer having a desired thickness by grinding a rear surface of the semiconductor wafer having a plurality of devices formed on a front surface thereof, the rear surface of the semiconductor wafer is ground so that the semiconductor wafer has a thickness of 10 ?m to 100 ?m, and a strain layer having a thickness of 0.05 ?m to 0.1 ?m is left on the rear surface of the semiconductor wafer by the grinding. The strain layer is left to provide the gettering effect, preventing a harmful influence exerted on the quality of the semiconductor devices. Degradation in transverse rupture strength can be prevented by the grinding.

Abstract: In a semiconductor wafer processing method of forming a semiconductor wafer having a desired thickness by grinding a rear surface of the semiconductor wafer having a plurality of devices formed on a front surface thereof, the rear surface of the semiconductor wafer is ground so that the semiconductor wafer has a thickness of 10 ?m to 100 ?m, and a strain layer having a thickness of 0.05 ?m to 0.1 ?m is left on the rear surface of the semiconductor wafer by the grinding. The strain layer is left to provide the gettering effect, preventing a harmful influence exerted on the quality of the semiconductor devices. Degradation in transverse rupture strength can be prevented by the grinding.

Abstract: A polishing grindstone according to the present invention comprises abrasive grains dispersed in, bound to and held by a particulate matrix composed of rubber particles. With the polishing grindstone, the abrasive grains decreased in polishing properties owing to wear associated with polishing become easily detached from the surface of the grindstone, and fresh abrasive grains not worn are exposed at the surface, thus permitting polishing at a constantly stable speed, and ensuring stable polishing for a long term.