Abstract: An ion source includes a vacuum chamber having a cooling mechanism, an ion generation container for reacting an ionized gas with an ion material so as to generate ions, an extraction electrode for extracting ions generated in the ion generation container and generating an ion beam, and a shielding member provided inside and in the vicinity of an inner wall of the vacuum chamber, and having a main body made of a conductive metal for blocking deposition of an insulating material on the inner wall (10d) of the vacuum chamber. The main body of the shielding member has a plurality of protruding support portions that is in contact with the inner wall of the vacuum chamber for supporting the main body in a manner such that the main body is fitted at a distance from the inner wall of the vacuum chamber.

Abstract: An ion source includes a vacuum chamber having a cooling mechanism, an ion generation container for reacting an ionized gas with an ion material so as to generate ions, an extraction electrode for extracting ions generated in the ion generation container and generating an ion beam, and a shielding member provided inside and in the vicinity of an inner wall of the vacuum chamber, and having a main body made of a conductive metal for blocking deposition of an insulating material on the inner wall (10d) of the vacuum chamber. The main body of the shielding member has a plurality of protruding support portions that is in contact with the inner wall of the vacuum chamber for supporting the main body in a manner such that the main body is fitted at a distance from the inner wall of the vacuum chamber.

Abstract: An ion source having an ion generation container configured to generate ions by reacting ionized gas introduced into the container via a tubular gas introduction pipe with an ion source material emitted in the container. The gas introduction pipe is configured to introduce the ionized gas into an inner space of the gas introduction pipe via a gas supply pipe. In the inner space of the gas introduction pipe, a detachable cooling trap member is disposed and includes a cooling trap portion configured to cool and trap a byproduct produced in the ion generation container. The cooling trap portion is disposed near a supply-side leading end of the gas supply pipe in the inner space of the gas introduction pipe and is not contact with an interior wall face of the gas introduction pipe.

Abstract: An ion source having an ion generation container configured to generate ions by reacting ionized gas introduced into the container via a tubular gas introduction pipe with an ion source material emitted in the container. The gas introduction pipe is configured to introduce the ionized gas into an inner space of the gas introduction pipe via a gas supply pipe. In the inner space of the gas introduction pipe, a detachable cooling trap member is disposed and includes a cooling trap portion configured to cool and trap a byproduct produced in the ion generation container. The cooling trap portion is disposed near a supply-side leading end of the gas supply pipe in the inner space of the gas introduction pipe and is not contact with an interior wall face of the gas introduction pipe.

Abstract: It is an object of this invention to provide an ion source and a plasma processing apparatus capable of generating stable and long-life plasma. The ion source is provided with a high-frequency antenna (16) installed on the outer peripheral side of a partition wall (15) made of a dielectric material and partitioning a plasma generating chamber (14) and a shield body (26) made of a dielectric material and preventing deposition on the inner peripheral surface of the partition wall (15) facing the high-frequency antenna (16) inside the plasma generating chamber (14). The structure made of a dielectric material can prevent an increase in high-frequency power required for inductive coupling with plasma. The shield body (26) is formed with a slot (26a) in a direction crossing a winding direction of the high-frequency antenna (16).

Abstract: It is an object of this invention to provide an ion source and a plasma processing apparatus capable of generating stable and long-life plasma. The ion source is provided with a high-frequency antenna (16) installed on the outer peripheral side of a partition wall (15) made of a dielectric material and partitioning a plasma generating chamber (14) and a shield body (26) made of a dielectric material and preventing deposition on the inner peripheral surface of the partition wall (15) facing the high-frequency antenna (16) inside the plasma generating chamber (14). The structure made of a dielectric material can prevent an increase in high-frequency power required for inductive coupling with plasma. The shield body (26) is formed with a slot (26a) in a direction crossing a winding direction of the high-frequency antenna (16).

Abstract: A shield for controlling film thickness is arranged between a substrate and a target. The shield includes an aperture being narrow at a target side and wide at a side opposite to the target. Since the density of sputtered particles decreases away from the target, a portion of the substrate that is far from the target is exposed to low-density sputtered particles for a long time, and a portion of the substrate that is near the target is exposed to high-density sputtered particles for a short time, whereby a film of even thickness distribution is formed on a deposition face of the substrate.