Patents by Inventor Nasreen Chopra
Nasreen Chopra has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230051330Abstract: A system includes a memory and a processing device, operatively coupled to the memory, to perform operations including receiving, as input to a trained machine learning model for identifying defect impact with respect to at least one type defect type, data associated with a process related to electronic device manufacturing. The data associated with the process comprises at least one of: an input set of recipe settings for processing a component, a set of desired characteristics to be achieved by processing the component, or a set of constraints specifying an allowable range for each setting of the set of recipe settings. The operations further include obtaining an output by applying the data associated with the process to the trained machine learning model. The output is representative of the defect impact with respect to the at least one defect type.Type: ApplicationFiled: August 16, 2021Publication date: February 16, 2023Inventors: Dermot P. Cantwell, Changgong Wang, Nasreen Chopra, Moon Kyu Oh
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Patent number: 7010086Abstract: An imaging system for generating an image of a planar segment of an object is disclosed. The imaging system includes an x-ray source, a planar detector, and a controller. The x-ray source generates x-rays from first and second source points, the x-rays from the first and second source points passing through the object. The planar detector includes a plurality of photodetectors covered by a layer of scintillation material that converts x-rays into visible light, the planar detector is positioned to receive x-rays from the first and second source points after the x-rays have passed through the object. The controller selects which of the source points generates the x-rays at any given time. The controller reads a first image formed by x-rays from the first source point and stored in a first portion of the planar detector while a second portion of the photodetectors measures x-rays from the second source point.Type: GrantFiled: January 15, 2004Date of Patent: March 7, 2006Assignee: Agilent Technologies, Inc.Inventor: Nasreen Chopra
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Publication number: 20050207655Abstract: An inspection system inspects features of an object using a feedback mechanism. The inspection system includes a processor that receives image data representing the object. The processor is operable to determine parameter modification information from the image data and modify an image parameter used during the production of the image data with the parameter modification information. The modified image parameter is used during the production of subsequent image data representing the object.Type: ApplicationFiled: March 22, 2004Publication date: September 22, 2005Inventors: Nasreen Chopra, Jonathan Li, Izhak Baharav
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Publication number: 20050157841Abstract: An imaging system for generating an image of a planar segment of an object is disclosed. The imaging system includes an x-ray source, a planar detector, and a controller. The x-ray source generates x-rays from first and second source points, the x-rays from the first and second source points passing through the object. The planar detector includes a plurality of photodetectors covered by a layer of scintillation material that converts x-rays into visible light, the planar detector is positioned to receive x-rays from the first and second source points after the x-rays have passed through the object. The controller selects which of the source points generates the x-rays at any given time. The controller reads a first image formed by x-rays from the first source point and stored in a first portion of the planar detector while a second portion of the photodetectors measures x-rays from the second source point.Type: ApplicationFiled: January 15, 2004Publication date: July 21, 2005Inventor: Nasreen Chopra
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Publication number: 20050126766Abstract: Nanostructures provide improved contact to augment heat-exchange surfaces of various devices or structures. In one embodiment, an article of manufacture has a body having a heat-exchanging surface and nanostructures disposed on the heat-exchanging surface. The nanostructures are arranged to enhance thermal transfer between said body and an object distinct from said body and may be arranged to form a substantially continuous film. Examples of suitable nanostructures include carbon and/or boron nitride nanotubes, which may be grown on the heat-exchanging surface.Type: ApplicationFiled: September 16, 2004Publication date: June 16, 2005Applicant: Koila,Inc.Inventors: Ju-Hyung Lee, Nasreen Chopra
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Publication number: 20050129928Abstract: Nanostructures provide increased surface area to augment heat-exchange surfaces of various devices or structures. In one embodiment, an article of manufacture has a body having a heat-exchanging surface and nanostructures disposed on the heat-exchanging surface. The nanostructures are arranged to enhance thermal transfer between the body and a region of fluid and may be spaced apart from each other to permit flow of a fluid between the nanostructures. Examples of suitable nanostructures include carbon and/or boron nitride nanotubes, which may be grown on the heat-exchanging surface.Type: ApplicationFiled: September 16, 2004Publication date: June 16, 2005Applicant: Koila, Inc.Inventors: Ju-Hyung Lee, Nasreen Chopra
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Publication number: 20050116336Abstract: Nano-composite materials with enhanced thermal performance that can be used for thermal management in a wide range of applications, including heat sinks, device packaging, semiconductor device layers, printed circuit boards and other components of electronic, optical and/or mechanical systems. One type of nano-composite material has a base material and nanostructures (e.g., nanotubes) dispersed in the base material. Another type of nano-composite material has layers of a base material with nanotube films disposed thereon.Type: ApplicationFiled: September 16, 2004Publication date: June 2, 2005Applicant: Koila, Inc.Inventors: Nasreen Chopra, Shilajeet Banerjee
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Publication number: 20050090024Abstract: A method for developing a manufacturing process includes measuring, in a first testing environment, a primary property of a nano-engineered material at one or more positions to provide one or more measurements. The method also includes determining whether the one or more measurements satisfy a first tolerance criterion and taking a further action based on whether the one or more measurements satisfy the first tolerance criterion. Additionally, a method of measuring thermal properties of a nano-engineered material includes irradiating a nano-engineered material with laser radiation, wherein the laser radiation impinges on a first surface of the nano-engineered material at one ore more locations, capturing at least one image of the nano-engineered material, and analyzing the at least one image to characterize the thermal properties of the nano-engineered material.Type: ApplicationFiled: September 16, 2004Publication date: April 28, 2005Applicant: Koila, Inc.Inventor: Nasreen Chopra
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Publication number: 20050089638Abstract: A method for enhancing contact between a nanotube and a first material comprises providing a nanotube, said nanotube having ends and treating at least one of said ends of said nanotube. In one embodiment, the contact is thermal contact. In another embodiment, the treating step includes exposing said nanotube to an oxygen plasma or energetic oxygen. In a specific embodiment, the treating step includes opening at least one of said ends of said nanotube. Additionally, the invention provides a nano-engineered material that includes a base material, a nanostructure coupled to said base material, wherein said nanostructure is treated to enhance thermal contact, and a contact-enhancing material coupled to said nanostructure. In a specific embodiment, the treatment of said nanostructure includes exposing said nanostructure to an oxygen plasma or energetic oxygen.Type: ApplicationFiled: September 16, 2004Publication date: April 28, 2005Applicant: Koila, Inc.Inventor: Nasreen Chopra
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Publication number: 20040120459Abstract: A method and apparatus for inspecting structural features of selected portions of an electronic device using a direct conversion X-ray detector. An manufactured device under inspection is positioned under an irradiating beam of X-rays. Those X-rays that are transmitted through the device are collected by a direct conversion detector, which converts the collected X-rays directly into electrical signals in an X-ray conversion layer. The electrical signals have an intensity that is non-uniformly proportional to the intensity of the transmitted X-rays such that the electrical signals represent the radiographic density of at least portions of the electronic device under inspection. A signal analysis system then converts the electrical signals into numerical information that is representative of specific features of the device under inspection.Type: ApplicationFiled: December 18, 2002Publication date: June 24, 2004Inventors: John P. Crowley, Nasreen Chopra, S. Jeffrey Rosner
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Patent number: 6633076Abstract: Methods and apparatus of the present invention deposit fluorinated silicate glass (FSG) in such a manner that it strongly adheres to an overlying or underlying barrier layer or etch stop layer, and has a lower dielectric constant, among other benefits. In one embodiment, silicon tetrafluoride (SiF4), oxygen (O2), and argon (Ar) are used as the reactant gases, with the ratio of oxygen to silicon controlled to be at between about 2:1 to 6:1. Such O2 levels help reduce the amount of degradation of ceramic chamber components otherwise caused by the elimination of silane from the process recipe.Type: GrantFiled: October 30, 2002Date of Patent: October 14, 2003Assignee: Applied Materials, Inc.Inventors: Padmanabhan Krishnaraj, Robert Duncan, Joseph D'Souza, Alan W. Collins, Nasreen Chopra, Kimberly Branshaw
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Publication number: 20030064556Abstract: Methods and apparatus of the present invention deposit fluorinated silicate glass (FSG) in such a manner that it strongly adheres to an overlying or underlying barrier layer or etch stop layer, and has a lower dielectric constant, among other benefits. In one embodiment, silicon tetrafluoride (SiF4), oxygen (O2), and argon (Ar) are used as the reactant gases, with the ratio of oxygen to silicon controlled to be at between about 2:1 to 6:1. Such O2 levels help reduce the amount of degradation of ceramic chamber components otherwise caused by the elimination of silane from the process recipe.Type: ApplicationFiled: October 30, 2002Publication date: April 3, 2003Applicant: Applied Materials, Inc.Inventors: Padmanabhan Krishnaraj, Robert Duncan, Joseph D'Souza, Alan W. Collins, Nasreen Chopra, Kimberly Branshaw
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Patent number: 6511922Abstract: Methods and apparatus of the present invention deposit fluorinated silicate glass (FSG) in such a manner that it strongly adheres to an overlying or underlying barrier layer or etch stop layer, and has a lower dielectric constant, among other benefits. In one embodiment, silicon tetrafluoride (SiF4), oxygen (O2), and argon (Ar) are used as the reactant gases, with the ratio of oxygen to silicon controlled to be at between about 2:1 to 6:1. Such O2 levels help reduce the amount of degradation of ceramic chamber components otherwise caused by the elimination of silane from the process recipe.Type: GrantFiled: March 26, 2001Date of Patent: January 28, 2003Assignee: Applied Materials, Inc.Inventors: Padmanabhan Krishnaraj, Robert Duncan, Joseph D'Souza, Alan W. Collins, Nasreen Chopra, Kimberly Branshaw
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Publication number: 20020173167Abstract: Methods and apparatus of the present invention deposit fluorinated silicate glass (FSG) in such a manner that it strongly adheres to an overlying or underlying barrier layer or etch stop layer, and has a lower dielectric constant, among other benefits. In one embodiment, silicon tetrafluoride (SiF4), oxygen (O2), and argon (Ar) are used as the reactant gases, with the ratio of oxygen to silicon controlled to be at between about 2:1 to 6:1. Such O2 levels help reduce the amount of degradation of ceramic chamber components otherwise caused by the elimination of silane from the process recipe.Type: ApplicationFiled: March 26, 2001Publication date: November 21, 2002Applicant: Applied Materials, Inc.Inventors: Padmanabhan Krishnaraj, Robert Duncan, Joseph D'Souza, Alan W. Collins, Nasreen Chopra, Kimberly Branshaw