Abstract: X-ray imaging systems are provided. A representative x-ray imaging system includes a gas detector that is configured to retain a volume of gas. The gas detector incorporates a first detection circuit corresponding to a first region of the gas and a second detection circuit corresponding to a second region of the gas. The first detection circuit is adapted to provide a first signal indicative of an intensity of x-rays radiating into the first region of the gas and the second detection circuit is adapted to provide a second signal indicative of an intensity of x-rays radiating into the second region of the gas. Methods and other systems also are provided.

Abstract: An imaging system that is capable of capturing images of moving objects as they are moving with minimal blurring by moving a point source of illumination such that the position from which illumination is projected is changed as the object moves to ensure that the position of the image projected onto an imaging plane remains substantially effectively stationary. The position from which illumination is projected functions as a point source of illumination. A image sensor of the imaging system is positioned in the imaging plane and receives illumination projected from the position of the illumination source that passes through the moving object. The image sensor produces electrical signals in response to the received illumination.

Abstract: A method and apparatus for depositing a low dielectric constant film includes depositing a silicon oxide based film, preferably by reaction of an organosilicon compound and an oxidizing gas at a low RF power level from about 10 W to about 500 W, exposing the silicon oxide based film to water or a hydrophobic-imparting surfactant such as hexamethyldisilazane, and curing the silicon oxide based film at an elevated temperature. Dissociation of the oxidizing gas can be increased in a separate microwave chamber to assist in controlling the carbon content of the deposited film. The moisture resistance of the silicon oxide based films is enhanced.

Abstract: An imaging system that is capable of capturing images of moving objects as they are moving with minimal blurring by moving a point source of illumination such that the position from which illumination is projected is changed as the object moves to ensure that the position of the image projected onto an imaging plane remains substantially effectively stationary. The position from which illumination is projected functions as a point source of illumination. A image sensor of the imaging system is positioned in the imaging plane and receives illumination projected from the position of the illumination source that passes through the moving object. The image sensor produces electrical signals in response to the received illumination.

Abstract: A method of forming a carbon-doped silicon oxide layer is disclosed. The carbon-doped silicon oxide layer is formed by applying an electric field to a gas mixture comprising an organosilane compound and an oxidizing gas. The carbon-doped silicon oxide layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the carbon-doped silicon oxide layer is used as an intermetal dielectric layer. In another integrated circuit fabrication process, the carbon-doped silicon oxide layer is incorporated into a damascene structure.

Abstract: X-ray imaging systems are provided. A representative x-ray imaging system includes a gas detector that is configured to retain a volume of gas. The gas detector incorporates a first detection circuit corresponding to a first region of the gas and a second detection circuit corresponding to a second region of the gas. The first detection circuit is adapted to provide a first signal indicative of an intensity of x-rays radiating into the first region of the gas and the second detection circuit is adapted to provide a second signal indicative of an intensity of x-rays radiating into the second region of the gas. Methods and other systems also are provided.

Abstract: A method and apparatus for depositing a low dielectric constant film includes depositing a silicon oxide based film, preferably by reaction of an organosilicon compound and an oxidizing gas at a low RF power level from about 10W to about 500W, exposing the silicon oxide based film to water or a hydrophobic-imparting surfactant such as hexamethyldisilazane, and curing the silicon oxide based film at an elevated temperature. Dissociation of the oxidizing gas can be increased in a separate microwave chamber to assist in controlling the carbon content of the deposited film. The moisture resistance of the silicon oxide based films is enhanced.

Abstract: A method of forming a carbon-doped silicon oxide layer is disclosed. The carbon-doped silicon oxide layer is formed by applying an electric field to a gas mixture comprising an organosilane compound and an oxidizing gas. The carbon-doped silicon oxide layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the carbon-doped silicon oxide layer is used as an intermetal dielectric layer. In another integrated circuit fabrication process, the carbon-doped silicon oxide layer is incorporated into a damascene structure.

Abstract: A method and apparatus for depositing a low dielectric constant film includes depositing a silicon oxide based film, preferably by reaction of an organosilicon compound and an oxidizing gas at a low RF power level from about 10W to about 500W, exposing the silicon oxide based film to water or a hydrophobic-imparting surfactant such as hexamethyldisilazane, and curing the silicon oxide based film at an elevated temperature. Dissociation of the oxidizing gas can be increased in a separate microwave chamber to assist in controlling the carbon content of the deposited film. The moisture resistance of the silicon oxide based films is enhanced.

Abstract: A method and apparatus for depositing a low dielectric constant film includes depositing a silicon oxide based film, preferably by reaction of an organosilicon compound and an oxidizing gas at a low RF power level from about 10W to about 500W, exposing the silicon oxide based film to water or a hydrophobic-imparting surfactant such as hexamethyldisilazane, and curing the silicon oxide based film at an elevated temperature. Dissociation of the oxidizing gas can be increased in a separate microwave chamber to assist in controlling the carbon content of the deposited film. The moisture resistance of the silicon oxide based films is enhanced.

Abstract: A method and apparatus for depositing a low dielectric constant film includes depositing a silicon oxide based film, preferably by reaction of an organosilicon compound and an oxidizing gas at a low RF power level from about 10 W to about 500 W, exposing the silicon oxide based film to water or a hydrophobic-imparting surfactant such as hexamethyldisilazane, and curing the silicon oxide based film at an elevated temperature. Dissociation of the oxidizing gas can be increased in a separate microwave chamber to assist in controlling the carbon content of the deposited film. The moisture resistance of the silicon oxide based films is enhanced.