Abstract: Disclosed are systems and methods for bonding wafers by use of microwave energy. Various components that facilitate relatively quick and efficient bonding provided by microwave energy are disclosed. In certain embodiments, devices and methods for applying desirable compression to the wafers can be implemented. In certain embodiments, devices and methods for providing a controlled gas environment such as vacuum can be implemented. In certain embodiments, devices and methods for maintaining the integrity of microwave mode of operation during the bonding process can be implemented. In certain embodiments, devices and methods for increasing throughput of the bonding process can be implemented.

Abstract: Disclosed are systems and methods for bonding wafers by use of microwave energy. Various components that facilitate relatively quick and efficient bonding provided by microwave energy are disclosed. In certain embodiments, devices and methods for applying desirable compression to the wafers can be implemented. In certain embodiments, devices and methods for providing a controlled gas environment such as vacuum can be implemented. In certain embodiments, devices and methods for maintaining the integrity of microwave mode of operation during the bonding process can be implemented. In certain embodiments, devices and methods for increasing throughput of the bonding process can be implemented.

Abstract: Systems and methods are disclosed for bonding of semiconductor, metal, metal-ceramic or combinations of these substrates using microwave energy. In some embodiments, metal-ceramic substrates carrying semiconductor substrates can be bonded simultaneously through a thin interlayer metal to a metal substrate by using microwave energy. In some embodiments, other substrate combinations can be bonded by using microwave energy. High intensity microwave energy is applied to the substrate assembly positioned within a microwave cavity. A process of selective heating can occur in the thin interlayer metal enhanced by the presence of third microwave absorbing substrate, resulting in melting of the thin interlayer metal to facilitate bonding of the two substrates. Some of the advantages associated with such bonding process are disclosed.

Abstract: Systems and methods are disclosed for bonding of substrates using microwave energy. In some embodiments, semiconductor substrates can be bonded through a thin interlayer metal to a metal substrate by using microwave energy. High intensity microwave energy is applied to the substrate assembly positioned within a microwave cavity. A process of selective heating can occur in the thin interlayer metal, resulting in melting of the thin interlayer metal to facilitate bonding of the two substrates. Some of the advantages associated with such bonding process are disclosed.

Abstract: Bonding of MEMs materials is carried out using microwave. High microwave absorbing films are placed within a microwave cavity, and excited to cause selective heating in the skin of the material. This causes heating in one place more than another. Thereby minimizing the effects of the bonding microwave energy.

Abstract: Bonding of materials such as MEMS materials is carried out using microwaves. High microwave absorbing films are placed within a microwave cavity containing other less microwave absorbing materials, and excited to cause selective heating in the skin depth of the films. This causes heating in one place more than another. This thereby minimizes unwanted heating effects during the microwave bonding process.

Abstract: Bonding of materials such as MEMS materials is carried out using microwaves. High microwave absorbing films are placed within a microwave cavity containing other less microwave absorbing materials, and excited to cause selective heating in the skin depth of the films. This causes heating in one place more than another. This thereby minimizes unwanted heating effects during the microwave bonding process.