Abstract: The converter uses the energy stored in the output filter of a step-down (or buck) converter and in the inductor of a step up/down (or buck-boost) converter to supply a second output of opposite sign. In particular, the converter has a first input receiving an input voltage; a first output supplying a first output voltage of a first sign; a second output supplying a second output voltage of opposite sign; a controlled switch connected between the first input and a first intermediate node; an inductor connected between the first intermediate node and the first output; a diode connected between the first intermediate node and a second intermediate node; and a dual voltage generating circuit connected between the second intermediate node and the second output.

Abstract: An electronic circuit is for the gradual start-up of electric loads, particularly halogen lamps. The circuit may include a power device having an output terminal connected to the electric load and having at least one control terminal receiving a predetermined driving current value. The circuit may further include a comparator having a first input terminal coupled to the power device output and a second input terminal kept at a reference potential. The comparator output may be connected to a controlled switch inserted upstream of the control terminal to control the opening of the switch and adjust the start-up phase of the power device according to the value of the reference potential.

Abstract: A driving circuit for electronically switched motors is provided. The driving circuit includes a supply voltage rectifying stage for providing a rectified supply voltage, first switching means for switching state based on output of a first control block, magnetic means for providing a magnetic flux according to the state of the first switching means, transmission diodes for transmitting an exciting current that flows through the magnetic means, first energy storing means for storing the exciting current, an energy return stage for transferring the energy stored in the first energy storing means to the rectifying stage, and energetic conversion means for receiving the energy stored in the energy storing means through second switching means controlled by a second control block, so as to provide a current as sinusoidal as possible.

Abstract: An electronic thermal protection circuit is for high currents which can occur in the start-up phase in lighting converters. The circuit is associated with a power device having an output terminal connected to an electric load and at least one control terminal receiving a predetermined driving current value by a driving circuit portion. Advantageously, an integrated temperature sensor is provided to detect the temperature of the power device, and an output stage is connected downstream of the sensor to switch off the driving circuit portion when a predetermined operation temperature is exceeded.

Abstract: A voltage converter circuit with a self-oscillating half-bridge configuration has a first and a second input terminal, and a first and a second output terminal, and including: a first power switch coupled between the first input terminal and the first output terminal, a second power switch coupled between the first output terminal and the second input terminal, a first voltage sensor having a first and a second sensing terminals coupled between the first input terminal and a control terminal of the first power switch, and a second voltage sensor having a first and a second sensing terminals coupled between the first output terminal and a control terminal of the second power switch. Each voltage sensor detects a voltage variation supplied on its respective first sensing terminal and generates on the respective second sensing terminal an activation potential for the respective power switch.

Abstract: A drive architecture for electric loads, and in particular for loads of light sources is presented. The architecture includes first and second drive circuit blocks connected in series with each other into a half-bridge configuration between first and second terminals of a rectified electric power supply network for the light source. Each drive circuit block has a respective secondary winding of a transformer associated therewith and includes at least a power device and a control circuit portion for controlling the power device. Each control circuit portion of each drive circuit block is subjected to a trigger action directly by its associated secondary winding to generate a high-frequency AC current for driving the light source.

Abstract: Presented is an integrated circuit structure having a power transistor in a first well and control circuitry in another well. Between the power and control regions is an intermediate region including a biaging circuit secured to prevent flow of parasitic current from the wells into the substrate by biasing the intermediate region at a value of potential which is tied to the value of potential of the first well. The biasing circuit can include a bipolar transistor.

Abstract: The present invention refers to a current generator with thermal protection. In one of its embodiments the current generator (GC) with thermal protection having an input terminal (In) and an output terminal (OUT) comprising: a voltage generator (V); a first controlled switch (T1) having a control terminal applied to said voltage generator (V), a first terminal connected to said input terminal (IN), and a second terminal connected to a resistance (R); characterized by comprising: a second controlled switch (T2) having a control terminal coupled to said voltage generator (V), a first terminal connected to said resistance (R), and a second terminal connected to said output terminal (OUT); a temperature sensor (S) of said current generator (GC) able to measure the temperature of said generator (GC); a control circuit (D) of said second controlled switch (T2) able to open said second controlled switch (T2) in the case in which the temperature of said current generator (GC) overcomes a preset temperature.

Abstract: A voltage converter circuit with a self-oscillating half-bridge configuration has a first and a second input terminal, and a first and a second output terminal, and including: a first power switch coupled between the first input terminal and the first output terminal, a second power switch coupled between the first output terminal and the second input terminal, a first voltage sensor having a first and a second sensing terminals coupled between the first input terminal and a control terminal of the first power switch, and a second voltage sensor having a first and a second sensing terminals coupled between the first output terminal and a control terminal of the second power switch. Each voltage sensor detects a voltage variation supplied on its respective first sensing terminal and generates on the respective second sensing terminal an activation potential for the respective power switch.

Abstract: A circuit controls switching of a load between two supply terminals by a device in an emitter-switching configuration formed by a high-voltage bipolar power transistor and a low-voltage switch element. The bipolar power transistor has a collector connected to the load. The switch element has a first terminal connected to the emitter of the bipolar power transistor, a second terminal connected to ground, and a control terminal connected to a control terminal of the circuit. The circuit has a biasing circuit connected to a base terminal of the bipolar power transistor. To ensure that the bipolar power transistor operates in the saturation region throughout the period of conduction, even with a sinusoidal driving voltage, the biasing circuit includes a capacitive device and a charging circuit for charging the capacitive device to bias the base of the bipolar power transistor.

Abstract: An integrated device in an emitter-switching configuration comprises a first bipolar transistor having a base region, an emitter region, and a collector region, a second transistor having a charge-collection terminal connected to an emitter terminal of the first transistor, and a quenching element having a terminal connected to a base terminal of the first transistor. The quenching element is formed within the base region or the emitter region of the first transistor.

Abstract: A device in an emitter-switching configuration comprises a high-voltage transistor having a first terminal connected directly to a first power terminal of the device, a control terminal connected to a control terminal of the device, and a second terminal. The device also includes a low-voltage transistor having a first terminal connected directly to the second terminal of the high-voltage transistor and a second terminal and a control terminal which are connected directly to a second power terminal and to the control terminal of the device, respectively. A circuit portion is provided for recovering an electrical charge discharged from the control terminal of the high-voltage transistor to the second terminal of the low-voltage transistor during the turning-off of the device.

Abstract: An integrated device comprises a high-voltage transistor and a low-voltage transistor in an emitter-switching configuration integrated in a chip (400) of semiconductor material comprising a buried P-type region (120) and a corresponding P-type contact region (405) which delimit a portion of semiconductor material within which the low-voltage transistor is formed. The contact region (405) has a network structure such as to divide this portion of semiconductor material into a plurality of cells (410) within each of which there is an elemental P-type base region (425) and an elemental N-type emitter region (430) of the low-voltage transistor. The elemental regions (425) and (430) of the various cells (410) are electrically connected to one another by means of surface metal contacts.

Abstract: An integrated structure comprises a protective Zener diode connected between a first and a second terminal of the structure, and is formed in a chip of semiconductor material within an insulating region. The structure includes first and second biasing Zener diodes connected back-to-back between the first and the second terminals of the structure. The first and the second biasing diodes are disposed respectively in the opposite direction to and in the same direction as the protective diode, and having a common terminal connected to the insulating region. The protective diode has a reverse threshold voltage lower than a reverse threshold voltage of the second biasing diode.

Abstract: A monolithically integrated power device for driving electrical loads includes a power stage having a high-voltage bipolar transistor and a low-voltage auxiliary transistor cascade-connected and inserted between a first power supply terminal and a second power supply terminal of the device. The power device also includes a driver circuit for the power stage having an input connected to an input terminal of the device. In accordance with the present invention the device includes a circuit for protection thereof against an excessive temperature rise and controlling power down of the power stage.

Abstract: The present invention relates to an integrated circuit adapted to perform the function of a diode of the DIAC type, the circuit having an input terminal and an output terminal. The circuit includes a first input transistor having a first terminal connected to a fixed voltage reference, a second terminal, and a control terminal coupled to the input terminal of the circuit. The circuit further includes second and third transistors in a current mirror configuration, each having a first terminal for coupling to the input terminal of the circuit, and a second terminal, and associated control terminals connected together and coupled to the second terminal of the first input transistor, the second terminal of the second transistor being connected to the control terminal of the first transistor.

Abstract: A power semiconductor structure (200), in particular in VIPower technology, made from a chip of N-type semiconductor material (110), comprising a bipolar or field-effect vertical power transistor (125, 120, 110) having a collector or drain region in such N-type material (110); the semiconductor structure comprises a PNP bipolar lateral power transistor (210, 110, 220) having a base region in such N-type material (110) substantially in common with the collector or drain region of the vertical power transistor.

Abstract: A monolithic semiconductor device having an edge structure that facilitates integrating high power devices an logic devices on the same substrate. The semiconductor device includes on a substrate of a first type of doping, a control region of a second type of doping, which is provided with an edge region, and a power region of a second type of doping. In the edge region, at least one channel is provided which is adapted to divide the edge region into regions that are electrically isolated from each other, the region at the channel being covered with a field plate. A method for producing such an edge structure in combination with the production execution of the monolithic device is also disclosed herein.

Abstract: A method and device for maintaining junction isolation between a second region that is normally clamped at a reference potential, contained within a first region of an opposite type of conductivity whose potential is subject to large inertial swings. The junction is ensured even when the potential of the first region moves toward and beyond the reference potential to which the second region is clamped, by connecting the second region to the reference potential by a switch, and causing the switch to open which places the second region in a floating state, leaving it free to track the potential excursion of the first region. The switch is closed after the potential of the first region has returned to a normal value. A comparator senses a shift of the potential of the second region from the reference potential to which it is clamped. The shift is dynamically induced by the capacitive coupling of the two regions, and triggers off the clamping switch.

Abstract: A circuit for biasing epitaxial wells of a semiconductor integrated circuit includes a first transistor and a second transistor driven in phase opposition to the first; when the supply voltage is positive, the first transistor, being connected between the power supply and the epitaxial well, is conducting whereas the second transistor is cut off. When, on the contrary, the supply voltage is negative, the second transistor, being connected between the epitaxial well and the ground reference GND, goes into saturation, thereby holding the epitaxial well biased to ground since, at that time, it is the highest potential present on the device. In this way, it becomes possible to always ensure reverse biasing of the parasitic diodes which form at the junctions between the epitaxial wells and the adjacent regions thereto.