Patents by Inventor Natalia Meshkov

Natalia Meshkov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor assisted metal deposition for nanolithography applications
    Patent number: 6410935
    Abstract: An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.
    Type: Grant
    Filed: May 16, 2001
    Date of Patent: June 25, 2002
    Assignee: Argonne National Laboratory
    Inventors: Tijana Rajh, Natalia Meshkov, Jovan M. Nedelijkovic, Laura R. Skubal, David M. Tiede, Marion Thurnauer
  • Semiconductor assisted metal deposition for nanolithography applications
    Publication number: 20020047180
    Abstract: An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.
    Type: Application
    Filed: May 16, 2001
    Publication date: April 25, 2002
    Applicant: Argonne National Laboratory
    Inventors: Tijana Rajh, Natalia Meshkov, Jovan M. Nedelijkovic, Laura R. Skubal, David M. Tiede, Marion Thurnauer
  • Semiconductor assisted metal deposition for nanolithography applications
    Patent number: 6271130
    Abstract: An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.
    Type: Grant
    Filed: November 25, 1998
    Date of Patent: August 7, 2001
    Assignee: The University of Chicago
    Inventors: Tijana Rajh, Natalia Meshkov, Jovan M. Nedelijkovic, Laura R. Skubal, David M. Tiede, Marion Thurnauer