Patents by Inventor Natalia Viktorovna DAVYDOVA

Natalia Viktorovna DAVYDOVA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9798225
    Abstract: A method of characterizing a lithographic mask type uses a mask having thereon test pattern units of linear features at different orientations. The mask is exposed, rotated by angle, exposed again, rotated by a further angle, exposed, etc. The printed features are measured to determine one or more characteristics of the mask. The method can be used to model shadowing effects of a EUV mask with a thick absorber illuminated at an angle.
    Type: Grant
    Filed: October 14, 2014
    Date of Patent: October 24, 2017
    Assignee: ASML NETHERLANDS B.V.
    Inventors: Eelco Van Setten, Natalia Viktorovna Davydova, Eleni Psara, Anton Bernhard Van Oosten
  • Patent number: 9519224
    Abstract: A lithographic apparatus comprising a support structure constructed to support a patterning device, the patterning device being capable of imparting an EUV radiation beam with a grating in its cross-section to form a patterned EUV radiation beam, and a projection system configured to project the patterned EUV radiation beam onto a target portion of the substrate, wherein the support structure is provided with a grating comprising a series of first reflective portions which alternates with a series of second reflective portions, the second reflective portions having a reflectivity which is less than the reflectivity of at least part of the first reflective portions and which is greater than zero.
    Type: Grant
    Filed: September 21, 2012
    Date of Patent: December 13, 2016
    Assignee: ASML Netherlands B.V.
    Inventors: Arjan Gijsbertsen, Hubertus Antonius Geraets, Bart Peter Bert Segers, Natalia Viktorovna Davydova
  • Publication number: 20160266483
    Abstract: A method of characterizing a lithographic mask type uses a mask having thereon test pattern units of linear features at different orientations. The mask is exposed, rotated by angle, exposed again, rotated by a further angle, exposed, etc. The printed features are measured to determine one or more characteristics of the mask. The method can be used to model shadowing effects of a EUV mask with a thick absorber illuminated at an angle.
    Type: Application
    Filed: October 14, 2014
    Publication date: September 15, 2016
    Applicant: ASML Netherlands B.V.
    Inventors: Eelco VAN SETTEN, Natalia Viktorovna DAVYDOVA, Eleni PSARA, Anton Bernhard VAN OOSTEN