Abstract: A power semiconductor device is proposed. The power semiconductor device includes a semiconductor substrate having first and second main surfaces arranged opposite to each other. The semiconductor substrate includes an insulated gate bipolar transistor area (IGBT) area including an IGBT, and a diode area including a diode. The diode area includes a cathode region of a first conductivity type and an auxiliary region of a second conductivity type both adjoining to the second main surface of the semiconductor substrate. The cathode region adjoins to the auxiliary region along a first lateral direction. The IGBT area includes a collector region of the second conductivity type at the second main surface of the substrate. The collector region includes a first collector sub-region and a second collector sub-region adjoining to each other along the first lateral direction. The first collector sub-region has a larger maximum doping concentration than the second collector sub-region.