Abstract: An optical measurement apparatus includes: a storage processing part storing into a storage part a plurality of main reference positions where measurement is to be performed and at least one movement value relative to each main reference position; a main measuring part moving a measurement position to one of the main reference positions stored in the storage part, then irradiating light, and then measuring a change in a state of reflected light; an auxiliary measuring part moving the measurement position to an auxiliary reference position based on the movement value relative to one of the main reference positions stored in the storage part, then irradiating light, and then measuring a change in a state of reflected light; a main calculating part performing analysis and calculating a film thickness or an optical constant; and an auxiliary calculating part performing analysis and calculating a film thickness or an optical constant.

Abstract: Light is irradiated onto a glass substrate of an organic EL element, and the characteristics of an organic film are analyzed. In the sample analyzing apparatus, in such a way that the glass substrate is located on the upper side, the organic EL element is placed on a stage. The light is irradiated towards the glass substrate, and an amplitude ratio and a phase difference which are related to the organic EL element are measured. Also, the sample analyzing apparatus selects a model of a structure corresponding to reflected lights K1 to K3 of the irradiated light and calculates the amplitude ratio and the phase difference. The sample analyzing apparatus compares the measured result and the result calculated from the model, and properly executes the fitting, and determines the best model among the several models and then analyzes the characteristics related to the organic EL element.

Abstract: Light is irradiated onto a glass substrate of an organic EL element, and the characteristics of an organic film are analyzed. In the sample analyzing apparatus, in such a way that the glass substrate is located on the upper side, the organic EL element is placed on a stage. The light is irradiated towards the glass substrate, and an amplitude ratio and a phase difference which are related to the organic EL element are measured. Also, the sample analyzing apparatus selects a model of a structure corresponding to reflected lights K1 to K3 of the irradiated light and calculates the amplitude ratio and the phase difference. The sample analyzing apparatus compares the measured result and the result calculated from the model, and properly executes the fitting, and determines the best model among the several models and then analyzes the characteristics related to the organic EL element.

Abstract: An optical measurement apparatus includes: a storage processing part storing into a storage part a plurality of main reference positions where measurement is to be performed and at least one movement value relative to each main reference position; a main measuring part moving a measurement position to one of the main reference positions stored in the storage part, then irradiating light, and then measuring a change in a state of reflected light; an auxiliary measuring part moving the measurement position to an auxiliary reference position based on the movement value relative to one of the main reference positions stored in the storage part, then irradiating light, and then measuring a change in a state of reflected light; a main calculating part performing analysis and calculating a film thickness or an optical constant; and an auxiliary calculating part performing analysis and calculating a film thickness or an optical constant.

Abstract: Light is irradiated onto a glass substrate of an organic EL element, and the characteristics of an organic film are analyzed. In the sample analyzing apparatus, in such a way that the glass substrate is located on the upper side, the organic EL element is placed on a stage. The light is irradiated towards the glass substrate, and an amplitude ratio and a phase difference which are related to the organic EL element are measured. Also, the sample analyzing apparatus selects a model of a structure corresponding to reflected lights K1 to K3 of the irradiated light and calculates the amplitude ratio and the phase difference. The sample analyzing apparatus compares the measured result and the result calculated from the model, and properly executes the fitting, and determines the best model among the several models and then analyzes the characteristics related to the organic EL element.

Abstract: Among a plurality of parameters concerning a film forming condition, different parameter values are set for one parameter and the same predetermined values are set for other parameters to manufacture two pieces of film structures including a high-dielectric constant film or ferroelectric film formed on a substrate. The film characteristics of the respective film structures are analyzed by a spectroscopic ellipsometer, a film structure in which the ratio of the presence of an accompanying dielectric film is smaller, is determined to be good by comparing the analysis results, and a parameter value set for the manufacture of the good film structure is determined. Then similar processing is performed, to specify an optimal parameter value for one parameter, and similar processing is also performed for other parameters to specify an optimal parameter value for the other parameters.

Abstract: An ellipsometer measures any point of a sample by a first spectrometer and a second spectrometer. The ellipsometer performs analysis based on the measurement results obtained by the first spectrometer, performs analysis based on the measurement results obtained by the second spectrometer, and calculates an approximation formula for approximating the analysis results obtained by the second spectrometer to the analysis results obtained by the first spectrometer. The remaining points of the sample are measured with the second spectrometer, and the results of analysis using the measurement results are corrected based on the approximation formula.

Abstract: The spectroscopic ellipsometer, by a computer program incorporated therein, applies voltage to a sample placed on a stage, with a power supply device and conducting probe stands, polarizes multi-wavelength light, with a light polarizer, generated by a xenon lamp and irradiates the polarized light to the sample. The sample is provided with a multilayer film and electrodes formed on a substrate and the sample's surface, and light reflected from the sample is received by the light receiver and measured by the spectrometer. The computer analyzes the optical characteristic of the sample individually for each layer of the multilayer film on the basis of the measurement result and a value calculated from a model which is formed according to the sample structure.

Abstract: The present invention provides a thin film property measuring method using a spectroscopic ellipsometer. With the measuring method, a model including a combination of the film thickness, complex refractive index, or the like, of each layer is formed, and fitting is made for the measured spectra and the spectra calculated based upon the model, with the model and the incident angle being modified over a predetermined number of repetitions, thereby determining the structure, the wavelength dependency of the dielectric constant, and the composition ratio, of a thin film including a compound semiconductor layer on a substrate. Furthermore, new approximate calculation is employed in the present invention, thereby enabling the concentration of the atom of interest contained in polycrystalline compound semiconductor to be calculated.

Abstract: Light is irradiated onto a glass substrate of an organic EL element, and the characteristics of an organic film are analyzed. In the sample analyzing apparatus, in such a way that the glass substrate is located on the upper side, the organic EL element is placed on a stage. The light is irradiated towards the glass substrate, and an amplitude ratio and a phase difference which are related to the organic EL element are measured. Also, the sample analyzing apparatus selects a model of a structure corresponding to reflected lights K1 to K3 of the irradiated light and calculates the amplitude ratio and the phase difference. The sample analyzing apparatus compares the measured result and the result calculated from the model, and properly executes the fitting, and determines the best model among the several models and then analyzes the characteristics related to the organic EL element.

Abstract: With extremely-thin-film and thin-film measurement, models are formed based upon a combination of film thickness, optical constants obtained using the dispersion formula, incident angle, etc., and the model and measured spectrums are fit by BLMC for a single layer of a structure with a certain number of iterations, obtaining information regarding the single layer. With thin-film multi-layer-structure measurement, models are formed for multiple layers of a thin-film multi-layer structure likewise, and fit by BLMC or EBLMC, obtaining information regarding the thin-film multi-layer structure. In either measurement, light is cast onto a thin film on a substrate to be measured while changing the wavelength as a parameter in order to obtain the spectrums ?E(?i) and ?E(?i) for each wavelength ?i, representing the change in polarization between the incident and reflected light. The measured spectrums are fit, obtaining the best model. The results are confirmed and stored, as necessary.

Abstract: A sample, in which a dielectric film having a dielectric constant equal to or larger than 50 (based on electrical measurement) is formed on a substrate, is measured by an ellipsometer while a model corresponding to the sample is formed based on effective medium approximation (EMA). A film corresponding to the dielectric film of the model includes void volume fraction between 60% and 90%. A calculated value based on the model is compared with a value measured by the ellipsometer and fitting is applied to decrease a difference between the compared values in order to specify the thickness and the optical constant of the sample.

Abstract: Among a plurality of parameters concerning a film forming condition, different parameter values are set for one parameter and the same predetermined values are set for other parameters to manufacture two pieces of film structures including a high-dielectric constant film or ferroelectric film formed on a substrate. The film characteristics of the respective film structures are analyzed by a spectroscopic ellipsometer, a film structure in which the ratio of the presence of an accompanying dielectric film is smaller, is determined to be good by comparing the analysis results, and a parameter value set for the manufacture of the good film structure is determined. Then similar processing is performed, to specify an optimal parameter value for one parameter, and similar processing is also performed for other parameters to specify an optimal parameter value for the other parameters.

Abstract: The spectroscopic ellipsometer, by a computer program incorporated therein, applies voltage to a sample placed on a stage, with a power supply device and conducting probe stands, polarizes multi-wavelength light, with a light polarizer, generated by a xenon lamp and irradiates the polarized light to the sample. The sample is provided with a multilayer film and electrodes formed on a substrate and the sample's surface, and light reflected from the sample is received by the light receiver and measured by the spectrometer. The computer analyzes the optical characteristic of the sample individually for each layer of the multilayer film on the basis of the measurement result and a value calculated from a model which is formed according to the sample structure.

Abstract: A sample, in which a dielectric film having a dielectric constant equal to or larger than 50 (based on electrical measurement) is formed on a substrate, is measured by an ellipsometer while a model corresponding to the sample is formed based on effective medium approximation (EMA). A film corresponding to the dielectric film of the model includes void volume fraction between 60% and 90%. A calculated value based on the model is compared with a value measured by the ellipsometer and fitting is applied to decrease a difference between the compared values in order to specify the thickness and the optical constant of the sample.

Abstract: An ellipsometer measures any point of a sample by a first spectrometer and a second spectrometer. The ellipsometer performs analysis based on the measurement results obtained by the first spectrometer, performs analysis based on the measurement results obtained by the second spectrometer, and calculates an approximation formula for approximating the analysis results obtained by the second spectrometer to the analysis results obtained by the first spectrometer. The remaining points of the sample are measured with the second spectrometer, and the results of analysis using the measurement results are corrected based on the approximation formula.

Abstract: With extremely-thin-film and thin-film measurement, models are formed based upon a combination of film thickness, optical constants obtained using the dispersion formula, incident angle, etc., and the model and measured spectrums are fit by BLMC for a single layer of a structure with a certain number of iterations, obtaining information regarding the single layer. With thin-film multi-layer-structure measurement, models are formed for multiple layers of a thin-film multi-layer structure likewise, and fit by BLMC or EBLMC, obtaining information regarding the thin-film multi-layer structure. In either measurement, light is cast onto a thin film on a substrate to be measured while changing the wavelength as a parameter in order to obtain the spectrums &psgr;E(&lgr;i) and &Dgr;E(&lgr;i) for each wavelength &lgr;i, representing the change in polarization between the incident and reflected light. The measured spectrums are fit, obtaining the best model. The results are confirmed and stored, as necessary.

Abstract: The present invention provides a thin film property measuring method using a spectroscopic ellipsometer. With the measuring method, a model including a combination of the film thickness, complex refractive index, or the like, of each layer is formed, and fitting is made for the measured spectra and the spectra calculated based upon the model, with the model and the incident angle being modified over a predetermined number of repetitions, thereby determining the structure, the wavelength dependency of the dielectric constant, and the composition ratio, of a thin film including a compound semiconductor layer on a substrate. Furthermore, new approximate calculation is employed in the present invention, thereby enabling the concentration of the atom of interest contained in polycrystalline compound semiconductor to be calculated.