Patents by Inventor Natasha Lavrovskaya

Natasha Lavrovskaya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Non-volatile memory cell with poly filled trench as control gate and fully isolated substrate as charge storage
    Patent number: 7663173
    Abstract: In a non-volatile memory cell, charge is stored in a fully isolated substrate or floating bulk that forms a storage capacitor with a first poly strip and includes a second poly strip defining a read gate and a poly-filled trench defining a control gate.
    Type: Grant
    Filed: January 12, 2007
    Date of Patent: February 16, 2010
    Assignee: National Semiconductor Corporation
    Inventors: Saurabh Desai, Natasha Lavrovskaya, Yuri Mirgorodski, Jeff Babcock