Patents by Inventor Natasha Us

Natasha Us has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Multilayer metallization method for integrated circuits
    Patent number: 4824803
    Abstract: Metal contacts and interconnections for semiconductor integrated circuits are fabricated through the deposition of a sandwich structure of metal. The bottom layer of a refractory metal prevents aluminum spiking into silicon; the top layer of refractory metal or alloy serves to reduce hillocking of the middle layer of conductive material. The upper layer of refractory metal at the location of the contact pads is etched off to improve bonding during packaging.
    Type: Grant
    Filed: June 22, 1987
    Date of Patent: April 25, 1989
    Assignee: Standard Microsystems Corporation
    Inventors: Natasha Us, Bonggi Kim, John E. Berg