Patents by Inventor Nathalie VULLIET

Nathalie VULLIET has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Germanium photodiode
    Patent number: 11837678
    Abstract: A photodiode includes an active area formed by intrinsic germanium. The active area is located within a cavity formed in a silicon layer. The cavity is defined by opposed side walls which are angled relative to a direction perpendicular to a bottom surface of the silicon layer. The angled side walls support epitaxial growth of the intrinsic germanium with minimal lattice defects.
    Type: Grant
    Filed: September 27, 2021
    Date of Patent: December 5, 2023
    Assignee: STMicroelectronics (Crolles 2) SAS
    Inventors: Charles Baudot, Sebastien Cremer, Nathalie Vulliet, Denis Pellissier-Tanon
  • Vertical photodiode
    Patent number: 11784275
    Abstract: A vertical photodiode includes an active area. The contacting pads for the diode terminals are laterally shifted away from the active area so as to not be located above or below the active area. The active area is formed in a layer of semiconductor material by a lower portion of a germanium area that is intrinsic and an upper portion of the germanium area that is doped with a first conductivity type. The vertical photodiode is optically coupled to a waveguide formed in the layer of semiconductor material.
    Type: Grant
    Filed: May 5, 2021
    Date of Patent: October 10, 2023
    Assignee: STMicroelectronics (Crolles 2) SAS
    Inventors: Charles Baudot, Sebastien Cremer, Nathalie Vulliet, Denis Pellissier-Tanon
  • GERMANIUM PHOTODIODE
    Publication number: 20220013681
    Abstract: A photodiode includes an active area formed by intrinsic germanium. The active area is located within a cavity formed in a silicon layer. The cavity is defined by opposed side walls which are angled relative to a direction perpendicular to a bottom surface of the silicon layer. The angled side walls support epitaxial growth of the intrinsic germanium with minimal lattice defects.
    Type: Application
    Filed: September 27, 2021
    Publication date: January 13, 2022
    Applicant: STMicroelectronics (Crolles 2) SAS
    Inventors: Charles BAUDOT, Sebastien CREMER, Nathalie VULLIET, Denis PELLISSIER-TANON
  • Germanium photodiode
    Patent number: 11145779
    Abstract: A photodiode includes an active area formed by intrinsic germanium. The active area is located within a cavity formed in a silicon layer. The cavity is defined by opposed side walls which are angled relative to a direction perpendicular to a bottom surface of the silicon layer. The angled side walls support epitaxial growth of the intrinsic germanium with minimal lattice defects.
    Type: Grant
    Filed: March 6, 2019
    Date of Patent: October 12, 2021
    Assignee: STMicroelectronics (Crolles 2) SAS
    Inventors: Charles Baudot, Sebastien Cremer, Nathalie Vulliet, Denis Pellissier-Tanon
  • Vertical photodiode
    Patent number: 11107941
    Abstract: A vertical photodiode includes an active area. The contacting pads for the diode terminals are laterally shifted away from the active area so as to not be located above or below the active area. The active area is formed in a layer of semiconductor material by a lower portion of a germanium area that is intrinsic and an upper portion of the germanium area that is doped with a first conductivity type. The vertical photodiode is optically coupled to a waveguide formed in the layer of semiconductor material.
    Type: Grant
    Filed: March 5, 2019
    Date of Patent: August 31, 2021
    Assignee: STMicroelectronics (Crolles 2) SAS
    Inventors: Charles Baudot, Sebastien Cremer, Nathalie Vulliet, Denis Pellissier-Tanon
  • VERTICAL PHOTODIODE
    Publication number: 20210257507
    Abstract: A vertical photodiode includes an active area. The contacting pads for the diode terminals are laterally shifted away from the active area so as to not be located above or below the active area. The active area is formed in a layer of semiconductor material by a lower portion of a germanium area that is intrinsic and an upper portion of the germanium area that is doped with a first conductivity type. The vertical photodiode is optically coupled to a waveguide formed in the layer of semiconductor material.
    Type: Application
    Filed: May 5, 2021
    Publication date: August 19, 2021
    Applicant: STMicroelectronics (Crolles 2) SAS
    Inventors: Charles BAUDOT, Sebastien CREMER, Nathalie VULLIET, Denis PELLISSIER-TANON
  • VERTICAL PHOTODIODE
    Publication number: 20190280144
    Abstract: A vertical photodiode includes an active area. The contacting pads for the diode terminals are laterally shifted away from the active area so as to not be located above or below the active area. The active area is formed in a layer of semiconductor material by a lower portion of a germanium area that is intrinsic and an upper portion of the germanium area that is doped with a first conductivity type. The vertical photodiode is optically coupled to a waveguide formed in the layer of semiconductor material.
    Type: Application
    Filed: March 5, 2019
    Publication date: September 12, 2019
    Applicant: STMicroelectronics (Crolles 2) SAS
    Inventors: Charles BAUDOT, Sebastien CREMER, Nathalie VULLIET, Denis PELLISSIER-TANON
  • GERMANIUM PHOTODIODE
    Publication number: 20190280146
    Abstract: A photodiode includes an active area formed by intrinsic germanium. The active area is located within a cavity formed in a silicon layer. The cavity is defined by opposed side walls which are angled relative to a direction perpendicular to a bottom surface of the silicon layer. The angled side walls support epitaxial growth of the intrinsic germanium with minimal lattice defects.
    Type: Application
    Filed: March 6, 2019
    Publication date: September 12, 2019
    Applicant: STMicroelectronics (Crolles 2) SAS
    Inventors: Charles BAUDOT, Sebastien CREMER, Nathalie VULLIET, Denis PELLISSIER-TANON