Abstract: A semiconductor wafer having a high degree of thinness and exhibiting an enhanced strength state. A layer of tenacious reinforcement material is disposed over a back side of the wafer while in a rough state from backgrinding without prior, conventional polishing or plasma etching of the back side. The thin layer or film of reinforcement material fills grooves, fractures and scratches in the back side of the wafer, enhance the rigidity of the wafer and provide a planar, smooth, back side surface layer. The reinforcement material counteracts internal stresses of the wafer tending to warp, crack and propagate lattice defects in the wafer. The reinforcement material may also be configured to act as a die attach adhesive, may provide an ionic barrier, and may remain as part of the packaging for semiconductor dice singulated from the wafer.

Abstract: A semiconductor wafer having a high degree of thinness and exhibiting an enhanced strength state. A layer of tenacious reinforcement material is disposed over a back side of the wafer while in a rough state from backgrinding without prior, conventional polishing or plasma etching of the back side. The thin layer or film of reinforcement material fills grooves, fractures and scratches in the back side of the wafer, enhance the rigidity of the wafer and provide a planar, smooth, back side surface layer. The reinforcement material counteracts internal stresses of the wafer tending to warp, crack and propagate lattice defects in the wafer. The reinforcement material may also be configured to act as a die attach adhesive, may provide an ionic barrier, and may remain as part of the packaging for semiconductor dice singulated from the wafer.

Abstract: A method and intermediate structure for improving the thinning and planarity of a wafer back side utilizing planarization material applied to the back side prior to at least one portion of the thinning operation and which is subsequently removed concurrently with the wafer material by one or more suitable thinning or planarization techniques. The planarization material may be applied as a thin layer or film of a hardenable material to the rough, bare back side of a wafer to produce a planar surface when hardened. The planarization material is selected to exhibit a material removal rate approximating the removal rate of the wafer material for a given removal technique such as etching, mechanical abrasion or chemical-mechanical planarization (CMP). This approach to wafer thinning and planarization results in improved process control in the form of uniform material removal rates, reduction in wafer warpage, final surface smoothness and planarity, and even distribution of residual stresses.

Abstract: A method and intermediate structure for improving the thinning and planarity of a wafer back side utilizing planarization material applied to the back side prior to at least one portion of the thinning operation and which is subsequently removed concurrently with the wafer material by one or more suitable thinning or planarization techniques. The planarization material may be applied as a thin layer or film of a hardenable material to the rough, bare back side of a wafer to produce a planar surface when hardened. The planarization material is selected to exhibit a material removal rate approximating the removal rate of the wafer material for a given removal technique such as etching, mechanical abrasion or chemical-mechanical planarization (CMP). This approach to wafer thinning and planarization results in improved process control in the form of uniform material removal rates, reduction in wafer warpage, final surface smoothness and planarity, and even distribution of residual stresses.

Abstract: A semiconductor wafer having a high degree of thinness and exhibiting an enhanced strength state. A layer of tenacious reinforcement material is disposed over a back side of the wafer while in a rough state from backgrinding, without prior, conventional polishing or plasma etching of the back side. The thin layer or film of reinforcement material fills grooves, fractures and scratches in the back side of the wafer, enhance the rigidity of the wafer and provide a planar, smooth, back side surface layer. The reinforcement material counteracts internal stresses of the wafer tending to warp, crack and propagate lattice defects in the wafer. The reinforcement material may also be configured to act as a die attach adhesive, may provide an ionic barrier, and may remain as part of the packaging for semiconductor dice singulated from the wafer.