Abstract: Apparatuses, systems, methods, and computer program products are disclosed for data rewrite operations. A non-volatile memory device comprises a non-volatile memory medium. A non-volatile memory device is configured to determine an error metric for a non-volatile memory medium in response to a read request for the non-volatile memory medium. A non-volatile memory device is configured to receive a refresh command from a controller over a bus. A non-volatile memory device is configured to rewrite data from a non-volatile memory medium during a predefined time period after receiving a refresh command in response to an error metric satisfying an error threshold.

Abstract: Apparatuses, systems, methods, and computer program products are disclosed for memory maintenance operations. A non-volatile memory device comprises a non-volatile memory medium. A non-volatile memory device is configured to receive a refresh command from a controller over a bus. A non-volatile memory device is configured to perform one or more maintenance operations on a non-volatile memory medium during a predefined period of time after receiving a refresh command.

Abstract: A reflectometry instrument includes a light source for emitting an illumination beam that illuminates the macula. A portion of the illumination beam is reflected from the macula and forms a detection beam. The detection beam is indicative of macular pigment in the macula. The instrument also includes a first mirror for reflecting the illumination beam toward the macula and for reflecting the detection beam from the macula. The instrument is configured so that the illumination beam and the detection beam remain separated between the macula and the first mirror.

Abstract: The present disclosure relates to thermal disturb as heater in cross-point memory. An apparatus includes a memory controller. The memory controller is configured to identify a target memory cell in response to at least one of a selection failure and a set fail memory read error associated with the target memory cell. The memory controller is further configured to apply a first sequence of recovery pulses to a first number of selected adjacent memory cells adjacent the target memory cell, the first sequence of recovery pulses configured to induce heating in the target memory cell.

Abstract: The present disclosure relates to thermal disturb as heater in cross-point memory. An apparatus includes a memory controller. The memory controller is configured to identify a target memory cell in response to at least one of a selection failure and a set fail memory read error associated with the target memory cell. The memory controller is further configured to apply a first sequence of recovery pulses to a first number of selected adjacent memory cells adjacent the target memory cell, the first sequence of recovery pulses configured to induce heating in the target memory cell.

Abstract: A stable board book has multiple stiff pages bound together and a stand connected to an end panel for holding the pages vertical when the book is put on a surface and each page is opened. The stand is attached by a hinge to the top cover of the book and by a hinge to the end panel. The end panel is attached by a hinge to the ventral edge of the bottom page of the book. The length of the stand is at least ½ of the length of the cover so that when the pages are opened and leaned against the stand, they will be stable and not fall back down.

Abstract: A package formed of a package material comprising a heat-sealable inner layer, an outer layer, and a pressure-sensitive adhesive disposed between the inner layer and the outer layer. The package may include a gusset with a center fold that divides the gusset into a first folded portion and a second folded portion. The package may further include a transverse heat-seal region extending across the gusset whereby the first folded portion is sealed to itself by mating surfaces of the heat-sealable inner layer and the second folded portion is sealed to itself by mating surfaces of the heat-sealable inner layer. The package may also include a patterned die cut formed in the heat-sealable inner layer, wherein at least a portion of the patterned die cut is adjacent to the transverse heat-seal region of the gusset so as to allow a portion of the inner layer to delaminate and expose a portion of the pressure-sensitive adhesive when the center fold is unfolded and the resealable pour spout is opened.

Abstract: A package formed of a package material comprising a heat-sealable inner layer, an outer layer, and a pressure-sensitive adhesive disposed between the inner layer and the outer layer. The package may include a gusset with a center fold that divides the gusset into a first folded portion and a second folded portion. The package may further include a transverse heat-seal region extending across the gusset whereby the first folded portion is sealed to itself by mating surfaces of the heat-sealable inner layer and the second folded portion is sealed to itself by mating surfaces of the heat-sealable inner layer. The package may also include a patterned die cut formed in the heat-sealable inner layer, wherein at least a portion of the patterned die cut is adjacent to the transverse heat-seal region of the gusset so as to allow a portion of the inner layer to delaminate and expose a portion of the pressure-sensitive adhesive when the center fold is unfolded and the resealable pour spout is opened.

Abstract: Methods and arrangements for data storage are discussed. Embodiments include applying a first voltage between a tip and an electrode, thereby forming a polarized domain in a ferroelectric material between 1 nanometer (nm) and 50 nm in thickness. The embodiments may also include applying another voltage through the tip, thereby generating a current responsive to an orientation of the polarized domain. The embodiments may also include measuring the current and determining the orientation of the polarized domain, based upon the measuring.

Abstract: A packaging article including a flap for opening and reclosing the packaging article. The packaging article comprises a flexible packaging material and a label. The flexible packaging material includes the flap and a plurality of slits defining at least a portion of a boundary of the flap. The plurality of slits are substantially parallel to and spaced from one another and have a length dimension. When applying to the flap a tearing force directed substantially perpendicularly to the length dimensions of the plurality of slits, the flap can be opened by the tearing force tearing the flexible packaging material between the plurality of slits. A first portion of the label is affixed to a portion of the flap. A second portion of the label is adapted to be repeatedly removably adhered to a portion of the flexible packaging material adjacent the flap such that the flap can be opened and reclosed. The packaging article may be a ream wrapper.

Abstract: Provided herein are embodiments for adjusting a built-in bias of a media including a conductive layer and a ferroelectric layer above the conductive layer. In certain embodiments, a voltage signal is applied between the conductive layer of the media and an electrode (provided over at least a portion of the ferroelectric layer) to thereby tune the built-in bias so that the built-in bias moves in a direction of (i.e., towards) the desired built-in bias. In other embodiments, the temperature of the at least a portion of the ferroelectric layer of the media is elevated to thereby tune the built-in bias so that the built-in bias moves in a direction of (i.e., towards) the desired built-in bias. The desired built-in bias can be a zero built-in bias, or a non-zero built-in bias.

Abstract: Provided herein are media for storing information and methods of forming such media. A strontium ruthenate (SRO) layer is provided. In certain embodiments, a titanium terminated (Ti-terminated) surface is formed on the SRO layer, and a lead zirconate titanate (PZT) layer is formed on the Ti-terminated surface. In other embodiments, a Ti-terminated surface is formed on the SRO layer, a lead titanate (PTO) layer is formed on the Ti-terminated surface, and a PZT layer is formed on the PTO layer. Preferably, the PZT layer is grown on the Ti-terminated surface, or the PTO layer, by step-flow or layer-by-layer growth, so that the resulting media has an atomically smooth surface.

Abstract: A packaging article including a flap for opening and reclosing the packaging article. The packaging article comprises a flexible packaging material and a label. The flexible packaging material includes the flap and a plurality of slits defining at least a portion of a boundary of the flap. The plurality of slits are substantially parallel to and spaced from one another and have a length dimension. When applying to the flap a tearing force directed substantially perpendicularly to the length dimensions of the plurality of slits, the flap can be opened by the tearing force tearing the flexible packaging material between the plurality of slits. A first portion of the label is affixed to a portion of the flap. A second portion of the label is adapted to be repeatedly removably adhered to a portion of the flexible packaging material adjacent the flap such that the flap can be opened and reclosed. The packaging article may be a ream wrapper.

Abstract: Methods and arrangements for data storage are discussed. Embodiments include applying a first voltage between a tip and an electrode, thereby forming a polarized domain in a ferroelectric material between 1 nanometer (nm) and 50 nm in thickness. The embodiments may also include applying another voltage through the tip, thereby generating a current responsive to an orientation of the polarized domain. The embodiments may also include measuring the current and determining the orientation of the polarized domain, based upon the measuring.

Abstract: A seek-and-scan probe memory device comprising a patterned capping layer over a phase-change media, where the patterned capping layer defines the bit locations on the phase-change media. The patterned capping layer may be formed from self-assembled structures. In other embodiments, nanostructures are formed on the bottom electrode below the phase-change media to focus an applied electric field from the probe, so as to increase bit density and contrast. The nanostructures may be a regular or random array of nanostructures, formed by using a self-assembling material. The nanostructures may be conductive or non-conductive. Other embodiments are described and claimed.

Abstract: A carbon nanotube is formed on at least one Molybdenum-based electrode. In one embodiment, a carbon-nanotube device includes a pair of Molybdenum-based electrodes over respective terraces. Using a catalyst on the Molybdenum-based material of at least one electrode, a carbon nanotube is grown over a gap that separates the terraces to connect the Molybdenum-based electrodes. Yet other aspects of the present invention employ carbon nanotubes extending (suspended) from respective Molybdenum-based structures for use in electrically addressable devices. The nanotubes can also be formed by patterned growth to bridge such Molybdenum-based electrodes. A particular method for manufacturing this device does not require post-growth processing. Applications include, among many others, scalable nanotube transistors/switches nano-electromechanical systems.

Abstract: Apparatuses, a method, and a system for a non-volatile, probe-based memory device are disclosed herein. In various embodiments, probe-based memory may be one-time programmable or rewritable nonvolatile probe-based memory.

Abstract: A carbon nanotube is formed on at least one Molybdenum-based electrode. In one embodiment, a carbon-nanotube device includes a pair of Molybdenum-based electrodes over respective terraces. Using a catalyst on the Molybdenum-based material of at least one electrode, a carbon nanotube is grown over a gap that separates the terraces to connect the Molybdenum-based electrodes. Yet other aspects of the present invention employ carbon nanotubes extending (suspended) from respective Molybdenum-based structures for use in electrically addressable devices. The nanotubes can also be formed by patterned growth to bridge such Molybdenum-based electrodes. A particular method for manufacturing this device does not require post-growth processing. Applications include, among many others, scalable nanotube transistors/switches nano-electromechanical systems.

Abstract: A carbon nanotube is formed on at least one Molybdenum-based electrode. In one embodiment, a carbon-nanotube device includes a pair of Molybdenum-based electrodes over respective terraces. Using a catalyst on the Molybdenum-based material of at least one electrode, a carbon nanotube is grown over a gap that separates the terraces to connect the Molybdenum-based electrodes. Yet other aspects of the present invention employ carbon nanotubes extending (suspended) from respective Molybdenum-based structures for use in electrically addressable devices. The nanotubes can also be formed by patterned growth to bridge such Molybdenum-based electrodes. A particular method for manufacturing this device does not require post-growth processing. Applications include, among many others, scalable nanotube transistors/switches nano-electromechanical systems.