Abstract: Various aspects of the subject technology relate to systems, methods, and machine-readable media for extracting information from videos. The method includes annotating portions of interest within screen captures. The method also includes receiving at least a first set of videos for a video game. The method also includes training a first machine-learning model to identify the portions of interest within the first set of videos. The method also includes generating validation data based on results of the first machine-learning model. The method also includes extracting information based on the portions of interest identified in the first set of videos.

Abstract: The invention is a bottle opener and hat clip having a body portion comprising a generally U-shaped end forming a channel and a bottle cap opener end, the U-shaped end includes an interior ridge within the channel, the U-shaped end having a planar top surface, a handle portion is secured to the top surface of the U-shaped end and is disposed over the bottle cap opener end, the handle functions as a lever for the bottle opener and is adapted to be decorative or contain indicia that is displayed when the device is secured to the bill of a hat by inserting the hat bill within the channel of the U-shaped end.

Abstract: Various aspects of the subject technology relate to systems, methods, and machine-readable media for extracting information from videos. The method includes annotating portions of interest within screen captures. The method also includes receiving at least a first set of videos for a video game. The method also includes training a first machine-learning model to identify the portions of interest within the first set of videos. The method also includes generating validation data based on results of the first machine-learning model. The method also includes extracting information based on the portions of interest identified in the first set of videos.

Abstract: A method of conveying a fiber optic cable through a conduit having an inside diameter involves connecting an interior pig assembly to a far end of the fiber optic cable, the interior pig assembly having an outside diameter smaller than the conduit inside diameter, and inserting the interior pig assembly into the conduit. To convey the fiber optic cable through the conduit, the interior pig assembly may be magnetic, and an exterior assembly including a magnet outside the conduit may be used to pull the interior pig assembly pig through the conduit. In addition or alternatively, a gas may be injected into the conduit to push the pig assembly through the conduit.

Abstract: A device includes a substrate (10) and a III-nitride structure (15) grown on the substrate, the III-nitride structure comprising a light emitting layer (16) disposed between an n-type region (14) and a p-type region (18). The substrate is a RA03 (MO)n where R is one of a trivalent cation: Sc, In, Y and a lanthanide; A is one of a trivalent cation: Fe (III), Ga and Al; M is one for a divalent cation: Mg, Mn, Fe (II), Co, Cu, Zn and Cd; and n is an integer?1. The substrate has an inplane lattice constant asubstrate. At lease one III-nitride layer in the III-nitride structure has a bulk lattice constant alayer such that [(|asubstrate?alayer|)/asubstrate]*100% is no more than 1%.

Abstract: A method of conveying a fiber optic cable through a conduit having an inside diameter involves connecting an interior pig assembly to a far end of the fiber optic cable, the interior pig assembly having an outside diameter smaller than the conduit inside diameter, and inserting the interior pig assembly into the conduit. To convey the fiber optic cable through the conduit, the interior pig assembly may be magnetic, and an exterior assembly including a magnet outside the conduit may be used to pull the interior pig assembly pig through the conduit. In addition or alternatively, a gas may be injected into the conduit to push the pig assembly through the conduit.

Abstract: In a method according to embodiments of the invention, a III-nitride layer is grown on a growth substrate. The III-nitride layer is connected to a host substrate. The growth substrate is removed. The growth substrate is a non-III-nitride material. The growth substrate has an in-plane lattice constant asubstrate. The III-nitride layer has a bulk lattice constant alayer. In some embodiments, [(|asubstrate?alayer|)/asubstrate]*100% is no more than 1%.

Abstract: In a method according to embodiments of the invention, a III-nitride layer is grown on a growth substrate. The III-nitride layer is connected to a host substrate. The growth substrate is removed. The growth substrate is a non-III-nitride material. The growth substrate has an in-plane lattice constant asubstrate. The III-nitride layer has a bulk lattice constant alayer. In some embodiments, [(|asubstrate?alayer|)/asubstrate]*100% is no more than 1%.

Abstract: In embodiments of the invention, a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region is grown on a substrate. The substrate is a non-III-nitride material. The substrate has an in-plane lattice constant asubstrate. At least one III-nitride layer in the semiconductor structure has a bulk lattice constant alayer and [(|asubstrate?alayer|)/asubstrate]*100% is no more than 1%. A surface of the substrate opposite the surface on which the semiconductor structure is grown is textured.

Abstract: Systems and methods for solving and generating a mathematical puzzle are presented. A puzzle may comprise areas comprising mystery number regions, pair clue regions interposing pairs of mystery value numbers, and a central clue region located centrally to the mystery number region. Solving a puzzle may comprise deterministic search methods coupled with heuristic approaches. Puzzle generation may comprise adding conforming clues until a puzzle has only one possible solution, the clues chosen based on heuristics for adding clues while minimizing incremental change in puzzle difficulty; or reducing the number of solutions/partial solutions to the puzzle.

Abstract: In a method according to embodiments of the invention, a III-nitride layer is grown on a growth substrate. The III-nitride layer is connected to a host substrate. The growth substrate is removed. The growth substrate is a non-III-nitride material. The growth substrate has an in-plane lattice constant a substrate. The III-nitride layer has a bulk lattice constant a layer. In some embodiments, [(|a substrate?a layer|)/asubstrate]*100% is no more than 1%.

Abstract: In embodiments of the invention, a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region is grown on a substrate. The substrate is a non-III-nitride material. The substrate has an in-plane lattice constant asubstrate. At least one III-nitride layer in the semiconductor structure has a bulk lattice constant alayer and [(|asubstrate?alayer|)/asubstrate]*100% is no more than 1%. A surface of the substrate opposite the surface on which the semiconductor structure is grown is textured.

Abstract: In embodiments of the invention, a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region is grown on a substrate. The substrate is a non-III-nitride material. The substrate has an in-plane lattice constant asubstrate. At least one III-nitride layer in the semiconductor structure has a bulk lattice constant alayer and [(|asubstrate?alayer|)/asubstrate]100% is no more than 1%. A surface of the substrate opposite the surface on which the semiconductor structure is grown is textured.

Abstract: Systems and methods for solving and generating a mathematical puzzle are presented. A puzzle may comprise areas comprising mystery number regions, pair clue regions interposing pairs of mystery value numbers, and a central clue region located centrally to the mystery number region. Solving a puzzle may comprise deterministic search methods coupled with heuristic approaches. Puzzle generation may comprise adding conforming clues until a puzzle has only one possible solution, the clues chosen based on heuristics for adding clues while minimizing incremental change in puzzle difficulty; or reducing the number of solutions/partial solutions to the puzzle.

Abstract: A device includes a substrate (10) and a III-nitride structure (15) grown on the substrate, the III-nitride structure comprising a light emitting layer (16) disposed between an n-type region (14) and a p-type region (18). The substrate is a RAO3 (MO)n where R is one of a trivalent cation: Sc, In, Y and a lanthanide; A is one of a trivalent cation: Fe (III), Ga and Al; M is one for a divalent cation: Mg, Mn, Fe (II), Co, Cu, Zn and Cd; and n is an integer ?1. The substrate has an inplane lattice constant asubstrate. At lease one III-nitride layer in the III-nitride structure has a bulk lattice constant alayer such that [(|asubstrate?alayer|)/asubstrate]*100% is no more than 1%.

Abstract: In embodiments of the invention, a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region is grown on a substrate. The substrate is a non-III-nitride material. The substrate has an in-plane lattice constant asubstrate. At least one III-nitride layer in the semiconductor structure has a bulk lattice constant alayer and [(|asubstrate?alayer|)/asubstrate]100% is no more than 1%. A surface of the substrate opposite the surface on which the semiconductor structure is grown is textured.

Abstract: In a method according to embodiments of the invention, a III-nitride layer is grown on a growth substrate. The III-nitride layer is connected to a host substrate. The growth substrate is removed. The growth substrate is a non-III-nitride material. The growth substrate has an in-plane lattice constant a substrate. The III-nitride layer has a bulk lattice constant a layer. In some embodiments, [(|a substrate?a layer|)/asubstrate]*100% is no more than 1%.