Abstract: Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With such methods and apparatuses, a cast body of geometrically ordered multi-crystalline silicon may be formed that is free or substantially free of radially-distributed impurities and defects and having at least two dimensions that are each at least about 10 cm is provided.

Abstract: This invention relates to a system and a method of use for large ceramic member support and manipulation at elevated temperatures in non-oxidizing atmospheres, such as using carbon-carbon composite materials for producing high purity silicon in the manufacture of solar modules. The high temperature apparatus of this invention includes one or more support ribs, one or more cross braces in combination with the one or more support ribs, and a shaped support liner positionable upon the one or more support ribs and the one or more cross braces.

Abstract: Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With such methods and apparatuses, a cast body of geometrically ordered multi-crystalline silicon may be formed that is free or substantially free of radially-distributed impurities and defects and having at least two dimensions that are each at least about 10 cm is provided.

Abstract: This invention relates seed layers and a process of manufacturing seed layers for casting silicon suitable for use in solar cells or solar modules. The process includes the step of positioning tiles with aligned edges to form seams on a suitable surface, and the step of joining the tiles at the seams to form a seed layer. The step of joining includes heating the tiles to melt at least a portion of the tiles, contacting the tiles at both ends of at least one seam with electrodes, using plasma deposition of amorphous silicon, applying photons to melt a portion of the tiles, and/or layer deposition. Seed layers of this invention include a rectilinear shape of at least about 500 millimeters in width and length.

Abstract: Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With these methods, an ingot can be grown that is low in carbon and whose crystal growth is controlled to increase the cross-sectional area of seeded material during casting.

Abstract: This invention relates seed layers and a process of manufacturing seed layers for casting silicon suitable for use in solar cells or solar modules. The process includes the step of positioning tiles with aligned edges to form seams on a suitable surface, and the step of joining the tiles at the seams to form a seed layer. The step of joining includes heating the tiles to melt at least a portion of the tiles, contacting the tiles at both ends of at least one seam with electrodes, using plasma deposition of amorphous silicon, applying photons to melt a portion of the tiles, and/or layer deposition. Seed layers of this invention include a rectilinear shape of at least about 500 millimeters in width and length.

Abstract: Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With these methods, an ingot can be grown that is low in carbon and whose crystal growth is controlled to increase the cross-sectional area of seeded material during casting.

Abstract: Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With such methods and apparatuses, a cast body of geometrically ordered multi-crystalline silicon may be formed that is free or substantially free of radially-distributed impurities and defects and having at least two dimensions that are each at least about 10 cm is provided.

Abstract: This invention relates to a system and a method for liquid silicon containment, such as during the casting of high purity silicon used in solar cells or solar modules. The containment apparatus includes a shielding ember adapted to prevent breaching molten silicon from contacting structural elements or cooling elements of a casting device, and a volume adapted to hold a quantity of breaching molten silicon with the volume formed by a bottom and one or more sides.

Abstract: Methods are provided for casting one or more of a semiconductor, an oxide, and an intermetallic material. With such methods, a cast body of a monocrystalline form of the one or more of a semiconductor, an oxide, and an intermetallic material may be formed that is free of, or substantially free of, radially-distributed impurities and defects and having at least two dimensions that are each at least about 35 cm.

Abstract: Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With such methods and apparatuses, a cast body of monocrystalline silicon may be formed that is free of, or substantially free of, radially-distributed impurities and defects and having at least two dimensions that are each at least about 35 cm is provided.

Abstract: Methods are provided for casting one or more of a semi-conductor, an oxide, and an intermetallic material. With such methods, a cast body of a geometrically ordered multi-crystalline form of the one or more of a semiconductor, an oxide, and an intermetallic material may be formed that is free or substantially free of radially-distributed impurities and defects and having at least two dimensions that are each at least about 10 cm.

Abstract: Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With these methods, an ingot can be grown that is low in carbon and whose crystal growth is controlled to increase the cross-sectional area of seeded material during casting.

Abstract: Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With such methods and apparatuses, a cast body of monocrystalline silicon may be formed that is free of, or substantially free of, radially-distributed impurities and defects and having at least two dimensions that are each at least about 35 cm is provided.

Abstract: Systems and methods are provided for monitoring a solid-liquid interface during a casting process. The systems and methods enable determination of the location of a solid-liquid interface during the casting process.

Abstract: Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With these methods, an ingot can be grown that is low in carbon and whose crystal growth is controlled to increase the cross-sectional area of seeded material during casting.

Abstract: Methods are provided for casting one or more of a semi-conductor, an oxide, and an intermetallic material. With such methods, a cast body of a geometrically ordered multi-crystalline form of the one or more of a semiconductor, an oxide, and an intermetallic material may be formed that is free or substantially free of radially-distributed impurities and defects and having at least two dimensions that are each at least about 10 cm.

Abstract: Systems and methods are provided for monitoring a solid-liquid interface during a casting process. The systems and methods enable determination of the location of a solid-liquid interface during the casting process.

Abstract: This invention relates to a system and a method for liquid silicon containment, such as during the casting of high purity silicon used in solar cells or solar modules. The containment apparatus includes a shielding member adapted to prevent breaching molten silicon from contacting structural elements or cooling elements of a casting device, and a volume adapted to hold a quantity of breaching molten silicon with the volume formed by a bottom and one or more sides.

Abstract: Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With these methods, an ingot can be grown that is low in carbon and whose crystal growth is controlled to increase the cross-sectional area of seeded material during casting.