Abstract: A gas mixture for treating a substrate in a substrate processing system includes hydrogen fluoride gas, a vapor of an alcohol, an additive consisting of a base, and a carrier gas. The gas mixture can be used to treat high aspect ratio (HAR) structures arranged on a surface of a substrate. A surface of the substrate may be spin rinsed using a first rinsing liquid. The first rinsing liquid is spun off from the surface of the substrate. The gas mixture is directed onto the surface of the substrate after the first rinsing liquid is dispensed.

Abstract: A vapor delivery head for wet treatment of a substrate includes a body including an upper surface, a lower surface, an upper plenum and a lower plenum. A first bore is arranged on the upper surface of the body and fluidly connected to the upper plenum to supply heated fluid. A second bore is arranged on the upper surface of the body and connected to the upper plenum to remove heated fluid. A third bore is arranged on the upper surface of the body and connected to the lower plenum to receive a gas mixture. A plurality of through holes through the lower surface of the body are in fluid communication with the lower plenum.

Abstract: A device for processing wafer-shaped articles comprises a closed process chamber that provides a gas-tight enclosure. A rotary chuck is located within the closed process chamber. A heater is positioned relative to the chuck so as to heat a wafer shaped article held on the chuck from one side only and without contacting the wafer shaped article. The heater emits radiation having a maximum intensity in a wavelength range from 390 nm to 550 nm. At least one first liquid dispenser is positioned relative to the chuck so as to dispense a process liquid onto a side of a wafer shaped article that is opposite the side of the wafer-shaped article facing the heater.