Abstract: An interconnect structure including conducting layers of topological semi-metals and/or topological insulators. To increase charge carrier density in the conducting layers, a charge carrier doping layer present on at least one surface of the one or more conductive layers of topological semi-metals. The charge carrying doping layers have a charge carrier density greater than the topological semi-metals and/or topological insulators of the one or more conductive layers.

Abstract: According to one embodiment of the invention, a method for analyzing and addressing alarms from network intrusion detection systems includes receiving an alarm indicating an attack on a target host may have occurred, automatically accessing the target host in response to the alarm, and identifying the presence of the attack on the target host.