Abstract: A processing system for processing a wafer with a processing vapor is provided. The processing system comprises a chamber, a wafer holder disposed within the chamber for holding the wafer, a drive mechanism for moving the wafer holder through the chamber, and a processing vapor inlet disposed within the chamber for introducing the processing vapor into the chamber and directing the processing vapor onto the wafer. The processing vapor inlet has a generally elongate cross-section configured to create a flow of processing vapor with a generally elongate cross-section and to direct the flow onto the wafer surface in an orientation generally perpendicular to the wafer surface, thus causing the formation of a generally linear stagnation zone in the flow of the processing vapor where the flow meets the wafer surface. The processing system may include a first outlet positioned toward the front of the chamber and a second outlet positioned toward the back of the chamber.

Abstract: A processing system for processing a wafer with a processing vapor is provided. The processing system comprises a chamber, a wafer holder disposed within the chamber for holding the wafer, a drive mechanism for moving the wafer holder through the chamber, and a processing vapor inlet disposed within the chamber for introducing the processing vapor into the chamber and directing the processing vapor onto the wafer. The processing vapor inlet has a generally elongate cross-section configured to create a flow of processing vapor with a generally elongate cross-section and to direct the flow onto the wafer surface in an orientation generally perpendicular to the wafer surface, thus causing the formation of a generally linear stagnation zone in the flow of the processing vapor where the flow meets the wafer surface. The processing system may include a first outlet positioned toward the front of the chamber and a second outlet positioned toward the back of the chamber.