Abstract: Embodiments of the present invention provide metal structures for transporting or gettering materials disposed on or within a semiconductor substrate. A structure for transporting a material disposed on or within a semiconductor substrate may include a metal structure disposed within the semiconductor substrate and at a spaced distance from the material. The metal structure is configured to transport the material through the semiconductor substrate and to concentrate the material at the metal structure. The material may include a contaminant disposed within the semiconductor substrate, e.g., that originates from electronic circuitry on the substrate.

Abstract: Embodiments of the present invention provide metal structures for transporting or gettering materials disposed on or within a semiconductor substrate. A structure for transporting a material disposed on or within a semiconductor substrate may include a metal structure disposed within the semiconductor substrate and at a spaced distance from the material. The metal structure is configured to transport the material through the semiconductor substrate and to concentrate the material at the metal structure. The material may include a contaminant disposed within the semiconductor substrate, e.g., that originates from electronic circuitry on the substrate.

Abstract: Platinum (Pt) thin film heaters are deposited by a focused ion beam for semiconductor manufacturing of thermally tunable distributed feedback lasers. An exemplar 1.3 ?m InGaAsP/InP laser is integrated with a tuning element having a wide wavelength tuning range of 4.9 nm, that is, 857 GHz, with a small heater current of 13.0 mA.

Abstract: Platinum (Pt) thin film heaters are deposited by a focused ion beam for semiconductor manufacturing of thermally tunable distributed feedback lasers. An exemplar 1.3 ?m InGaAsP/InP laser is integrated with a tuning element having a wide wavelength tuning range of 4.9 nm, that is, 857 GHz, with a small heater current of 13.0 mA.

Abstract: A process for forming a nanocrystal nanostructure is repeated for growing the nanostructure disposed on an electron beam resist layer that is disposed on a substrate for forming an electron beam shadowmask from the nanostructure on the electron beam resist layer prior to electron beam exposure for patterning the electron beam resist layer in advance of subsequent processing steps. The nanocrystals are semiconductor materials and metals such as silver. The nanostructure enable the creation of ultra-fine nanometer sized electron beam patterned structures for use in the manufacture of submicron devices such as submicron-sized semiconductors and microelectromechanical devices.