Abstract: The detecting element of a thermoelectric infrared detector consists of p-n junctions of a thermopile which are located on a thin layer of unsupported silicon dioxide. The silicon dioxide spans an opening which extends through a silicon semiconductor substrate. The reference junctions of the thermopile are located above the silicon substrate. The detecting p-n junctions on the thin silicon dioxide above the opening in the substrate have a low heat capacity and respond rapidly to temperature changes, whereas the reference junctions above the thick substrate have a much higher heat capacity and tend to maintain their ambient temperature. The conduction of heat between the detecting p-n junctions and the reference junctions is limited by the thin insulating layer of silicon dioxide which joins the detecting p-n junctions to the substrate under the reference junctions.

Abstract: A semiconductor integrated circuit is described which includes an array of electronic devices and a plurality of electronic access devices. The access devices consist of sets of MOSFETs which may be turned on by the joint action of X and Y address lines to permit individual and isolated electrical connection between selected electronic devices in the array and peripheral on or off-chip sensing circuits. This permits continuous readout to be established and maintained for the selected devices without interference with the other devices in the array and without a requirement to readout any but the selected devices. One important embodiment of the present invention is one in which the electronic devices are visible or infrared radiation detectors. In order to provide minimum dead space between the array detectors, the array and access devices may be disposed on opposite surfaces of the semiconductor body.