Abstract: A method and apparatus for heat transfer. In some embodiments, a heat transfer apparatus includes a body defining an inner volume; an inlet coupled to a vapor source; a coolant channel extending through the heat transfer apparatus; a condensing surface on which a vapor condenses, wherein the condensing surface is configured to cause the vapor to form as one or more drops on the condensing surface; and an actuator configured to excite the one or more drops at a resonant frequency of the one or more drops to remove the one or more drops from the condensing surface.

Abstract: A method and apparatus for heat transfer. In some embodiments, a heat transfer apparatus includes a body defining an inner volume; an inlet coupled to a vapor source; a coolant channel extending through the heat transfer apparatus; a condensing surface on which a vapor condenses, wherein the condensing surface is configured to cause the vapor to form as one or more drops on the condensing surface; and an actuator configured to excite the one or more drops at a resonant frequency of the one or more drops to remove the one or more drops from the condensing surface.

Abstract: A method for fabrication of capacitive environment sensors is provided in which the sensor elements are integrated in a CMOS structure with electronics through the use of complementary metal oxide semiconductor (CMOS) fabrication methods. Also provided are environment sensors fabricated, for example, by the method, and a measurement system using the environment sensors fabricated by the method. The described method includes etching away one of the metal layers in a CMOS chip to create a cavity. This cavity is then filled with an environment-sensitive dielectric material to form a sensing capacitor between plates formed by the metal adhesion layers or an array of contacts from other metal layers of the CMOS structure. This approach provides improved sensing capabilities in a system that is easily manufactured.

Abstract: A method for fabrication of capacitive environment sensors is provided in which the sensor elements are integrated in a CMOS structure with electronics through the use of complementary metal oxide semiconductor (CMOS) fabrication methods. Also provided are environment sensors fabricated, for example, by the method, and a measurement system using the environment sensors fabricated by the method. The described method includes etching away one of the metal layers in a CMOS chip to create a cavity. This cavity is then filled with an environment-sensitive dielectric material to form a sensing capacitor between plates formed by the metal adhesion layers or an array of contacts from other metal layers of the CMOS structure. This approach provides improved sensing capabilities in a system that is easily manufactured.

Abstract: Sensor devices and sensing methods are provided. A sensor device is provided two flow channels, each comprising a sensor, and analyte flow is alternated between the two channels such that the sensors alternately serve as a sensor and a reference, thereby increasing accuracy of the sensors. The device is useful, for example, in chemical sensing using a variety of sensor types including without limitation: chemiresistors, gravimetric sensors, optical sensors, among others. Related sensing methods also are provided.

Abstract: Sensor devices and sensing methods are provided. A sensor device is provided two flow channels, each comprising a sensor, and analyte flow is alternated between the two channels such that the sensors alternately serve as a sensor and a reference, thereby increasing accuracy of the sensors. The device is useful, for example, in chemical sensing using a variety of sensor types including without limitation: chemiresistors, gravimetric sensors, optical sensors, among others. Related sensing methods also are provided.