Abstract: A memory apparatus includes an interconnect in a first dielectric above a substrate and a structure above the interconnect, where the structure includes a diffusion barrier material and covers the interconnect. The memory apparatus further includes a resistive random-access memory (RRAM) device coupled to the interconnect. The RRAM device includes a first electrode on a portion of the structure, a stoichiometric layer having a metal and oxygen on the first electrode, a non-stoichiometric layer including the metal and oxygen on the stoichiometric layer. A second electrode including a barrier material is on the non-stoichiometric layer. In some embodiments, the RRAM device further includes a third electrode on the second electrode. To prevent uncontrolled oxidation during a fabrication process a spacer may be directly adjacent to the RRAM device, where the spacer includes a second dielectric.

Abstract: A memory device structure includes a first electrode, a second electrode, a switching layer between the first electrode and the second electrode, where the switching layer is to transition between first and second resistive states at a voltage threshold. The memory device further includes an oxygen exchange layer between the switching layer and the second electrode, where the oxygen exchange layer includes a metal and a sidewall oxide in contact with a sidewall of the oxygen exchange layer. The sidewall oxide includes the metal of the oxygen exchange layer and oxygen, and has a lateral thickness that exceed a thickness of the switching layer.

Abstract: An apparatus, includes an interconnect, including a conductive material, above a substrate and a resistive random access memory (RRAM) device coupled to the interconnect. The RRAM device includes an electrode structure above the interconnect, where an upper portion of the electrode structure has a first width. The RRAM device further includes a switching layer on the electrode structure, where the switching layer has the first width and an oxygen exchange layer, having a second width less than the first width, on a portion of the switching layer. The RRAM device further includes a top electrode above the oxygen exchange layer, where the top electrode has the second width and an encapsulation layer on a portion of the switching layer, where the switching layer extends along a sidewall of the oxygen exchange layer.

Abstract: An RRAM device is disclosed. The RRAM device includes a bottom electrode, a high-k material on the bottom electrode, a top electrode, a top contact on the top electrode and an encapsulating layer of Al2O3. The encapsulating layer encapsulates the bottom electrode, the high-k material, the top electrode and the top contact.

Abstract: A memory device includes a bottom electrode above a substrate, a first switching layer on the bottom electrode, a second switching layer including aluminum on the first switching layer, an oxygen exchange layer on the second switching layer and a top electrode on the oxygen exchange layer. The presence of the second switching layer including aluminum on the first switching layer enables a reduction in electro-forming voltage of the memory device.

Abstract: Approaches for fabricating RRAM stacks with reduced forming voltage, and the resulting structures and devices, are described. In an example, a resistive random access memory (RRAM) device includes a conductive interconnect in an inter-layer dielectric (ILD) layer above a substrate. An RRAM element is on the conductive interconnect, the RRAM element including a first electrode layer on the uppermost surface of the conductive interconnect. A resistance switching layer is on the first electrode layer, the resistance switching layer including a first metal oxide material layer on the first electrode layer, and a second metal oxide material layer on the first metal oxide material layer, the second metal oxide material layer including a metal species not included in the first metal oxide material layer. An oxygen exchange layer is on the second metal oxide material layer of the resistance switching layer. A second electrode layer is on the oxygen exchange layer.

Abstract: A memory apparatus includes an interconnect in a first dielectric above a substrate and a structure above the interconnect, where the structure includes a diffusion barrier material and covers the interconnect. The memory apparatus further includes a resistive random-access memory (RRAM) device coupled to the interconnect. The RRAM device includes a first electrode on a portion of the structure, a stoichiometric layer having a metal and oxygen on the first electrode, a non-stoichiometric layer including the metal and oxygen on the stoichiometric layer. A second electrode including a barrier material is on the non-stoichiometric layer. In some embodiments, the RRAM device further includes a third electrode on the second electrode. To prevent uncontrolled oxidation during a fabrication process a spacer may be directly adjacent to the RRAM device, where the spacer includes a second dielectric.

Abstract: An apparatus, includes an interconnect, including a conductive material, above a substrate and a resistive random access memory (RRAM) device coupled to the interconnect. The RRAM device includes an electrode structure above the interconnect, where an upper portion of the electrode structure has a first width. The RRAM device further includes a switching layer on the electrode structure, where the switching layer has the first width and an oxygen exchange layer, having a second width less than the first width, on a portion of the switching layer. The RRAM device further includes a top electrode above the oxygen exchange layer, where the top electrode has the second width and an encapsulation layer on a portion of the switching layer, where the switching layer extends along a sidewall of the oxygen exchange layer.

Abstract: A memory device includes a bottom electrode above a substrate, a first switching layer on the bottom electrode, a second switching layer including aluminum on the first switching layer, an oxygen exchange layer on the second switching layer and a top electrode on the oxygen exchange layer. The presence of the second switching layer including aluminum on the first switching layer enables a reduction in electro-forming voltage of the memory device.

Abstract: An RRAM device is disclosed. The RRAM device includes a bottom electrode, a high-k material on the bottom electrode, a top electrode, a top contact on the top electrode and an encapsulating layer of Al2O3. The encapsulating layer encapsulates the bottom electrode, the high-k material, the top electrode and the top contact.

Abstract: Approaches for fabricating RRAM stacks with reduced forming voltage, and the resulting structures and devices, are described. In an example, a resistive random access memory (RRAM) device includes a conductive interconnect in an inter-layer dielectric (ILD) layer above a substrate. An RRAM element is on the conductive interconnect, the RRAM element including a first electrode layer on the uppermost surface of the conductive interconnect. A resistance switching layer is on the first electrode layer, the resistance switching layer including a first metal oxide material layer on the first electrode layer, and a second metal oxide material layer on the first metal oxide material layer, the second metal oxide material layer including a metal species not included in the first metal oxide material layer. An oxygen exchange layer is on the second metal oxide material layer of the resistance switching layer. A second electrode layer is on the oxygen exchange layer.

Abstract: A memory device structure includes a first electrode, a second electrode, a switching layer between the first electrode and the second electrode, where the switching layer is to transition between first and second resistive states at a voltage threshold. The memory device further includes an oxygen exchange layer between the switching layer and the second electrode, where the oxygen exchange layer includes a metal and a sidewall oxide in contact with a sidewall of the oxygen exchange layer. The sidewall oxide includes the metal of the oxygen exchange layer and oxygen, and has a lateral thickness that exceed a thickness of the switching layer.

Abstract: Homochiral metal organic framework (MOF) selected from a group consisting of (Sp)-P5A-MOF-1 and (Rp)-P5A-MOF-1 is provided. The homochiral MOFs are prepared from pure enantiomer struts of formula (I): The homochiral MOFs are suitable for separation of enantiomers from racemic mixtures.

Abstract: Homochiral metal organic framework (MOF) selected from a group consisting of (Sp)-P5A-MOF-1 and (Rp)-P5A-MOF-1 is provided. The homochiral MOFs are prepared from pure enantiomer struts of formula (I): The homochiral MOFs are suitable for separation of enantiomers from racemic mixtures.