Abstract: Systems and methods described herein relate to implementing battery life prediction strategies. In one embodiment, a method includes receiving a first battery dataset for a first set of rechargeable batteries that includes battery life measurements for the first set of rechargeable batteries, and training a two-headed autoencoder coupled to an elastic net module to predict battery life based on the first battery dataset, such that the two-headed autoencoder when trained is capable of receiving a second battery dataset for a second set of rechargeable batteries, determining statistical measures of a set of differential voltage-discharge curves over a range of discharge cycles based on the second battery dataset, and utilizing the two-headed autoencoder to predict battery life for at least one rechargeable battery of the second set of rechargeable batteries.

Abstract: Systems, methods, and other embodiments described herein relate to training a learning model to predict a cycling characteristic of a battery using a physics model. In one embodiment, a method includes deriving ground-truth parameters for a loss curve of an actual capacity using a physics model, the actual capacity associated with a battery type. The method also includes comparing the ground-truth parameters with curve parameters estimated by a self-attention model for physical tuning of the self-attention model, and the curve parameters being associated with a predicted capacity for the battery type. The method also includes adjusting the self-attention model by comparing predicted cycles from the self-attention model and actual cycles from the physics model for cycle life as additional tuning.

Abstract: The present invention studs oxide dielectric into trench capacitor top recesses after the formation of the trench capacitor structures. A thin (500 Å) cap buffer nitride is then deposited over the substrate. The studded dielectric and the collar oxide protect the trench capacitors during the subsequent selective dry etching, thereby forming isolation trenches having an approximately T-shaped cross section between the trench capacitors within the memory array area of the semiconductor chip.