Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of forming a stressed region in a selected manner at a selected depth (20) underneath the surface. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

Abstract: A technique for fabricating substrates such as a silicon-on-insulator substrate using a plasma immersion ion implantation ("PIII") system 10. The technique includes a method, which has a step of providing a substrate 2100. Ions are implanted 2109 into a surface of the substrate to a first desired depth to provide a first distribution of the ions using a plasma immersion ion implantation system 10. The implanted ions define a first thickness of material 2101 above the implant. Global energy is then increased of the substrate to initiate a cleaving action, where the cleaving action is sufficient to completely free the thickness of material from a remaining portion of the substrate. By way of the PIII system, the ions are introduced into the substrate in an efficient and cost effective manner.

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

Abstract: A donor substrate (10) for forming multiple thin films of material (12). In one embodiment, a first thin film of material is separated or cleaved from a donor substrate by introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define donor substrate material (12) above the selected depth. Energy is provided to a selected region of the substrate to cleave a thin film of material from the donor substrate. Particles are introduced again into the donor substrate underneath a fresh, or cleaved, surface of the donor substrate. A second thin film of material is then cleaved from the donor substrate.