Patents by Inventor Nathan Wheeler Gray

Nathan Wheeler Gray has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8431928
    Abstract: Provided herein are PIN structures including a layer of amorphous n-type silicon, a layer of intrinsic GaAs disposed over the layer of amorphous n-type silicon, and a layer of amorphous p-type silicon disposed over the layer of intrinsic GaAs. The layer of intrinsic GaAs may be engineered by the disclosed methods to exhibit a variety of structural properties that enhance light absorption and charge carrier mobility, including oriented polycrystalline intrinsic GaAs, embedded particles of intrinsic GaAs, and textured surfaces. Also provided are devices incorporating the PIN structures, including photovoltaic devices.
    Type: Grant
    Filed: December 15, 2011
    Date of Patent: April 30, 2013
    Assignee: The University of Utah Research Foundation
    Inventors: Ashutosh Tiwari, Makarand Karmarkar, Nathan Wheeler Gray
  • Patent number: 8164092
    Abstract: Provided herein are PIN structures including a layer of amorphous n-type silicon, a layer of intrinsic GaAs disposed over the layer of amorphous n-type silicon, and a layer of amorphous p-type silicon disposed over the layer of intrinsic GaAs. The layer of intrinsic GaAs may be engineered by the disclosed methods to exhibit a variety of structural properties that enhance light absorption and charge carrier mobility, including oriented polycrystalline intrinsic GaAs, embedded particles of intrinsic GaAs, and textured surfaces. Also provided are devices incorporating the PIN structures, including photovoltaic devices.
    Type: Grant
    Filed: January 12, 2011
    Date of Patent: April 24, 2012
    Assignee: The University of Utah Research Foundation
    Inventors: Ashutosh Tiwari, Makarand Karmarkar, Nathan Wheeler Gray
  • Publication number: 20120086007
    Abstract: Provided herein are PIN structures including a layer of amorphous n-type silicon, a layer of intrinsic GaAs disposed over the layer of amorphous n-type silicon, and a layer of amorphous p-type silicon disposed over the layer of intrinsic GaAs. The layer of intrinsic GaAs may be engineered by the disclosed methods to exhibit a variety of structural properties that enhance light absorption and charge carrier mobility, including oriented polycrystalline intrinsic GaAs, embedded particles of intrinsic GaAs, and textured surfaces. Also provided are devices incorporating the PIN structures, including photovoltaic devices.
    Type: Application
    Filed: December 15, 2011
    Publication date: April 12, 2012
    Inventors: Ashutosh Tiwari, Makarand Karmarkar, Nathan Wheeler Gray
  • Publication number: 20110175085
    Abstract: Provided herein are PIN structures including a layer of amorphous n-type silicon, a layer of intrinsic GaAs disposed over the layer of amorphous n-type silicon, and a layer of amorphous p-type silicon disposed over the layer of intrinsic GaAs. The layer of intrinsic GaAs may be engineered by the disclosed methods to exhibit a variety of structural properties that enhance light absorption and charge carrier mobility, including oriented polycrystalline intrinsic GaAs, embedded particles of intrinsic GaAs, and textured surfaces. Also provided are devices incorporating the PIN structures, including photovoltaic devices.
    Type: Application
    Filed: January 12, 2011
    Publication date: July 21, 2011
    Inventors: Ashutosh Tiwari, Makarand Karmarkar, Nathan Wheeler Gray