Abstract: A light detection and ranging (LIDAR) device including a plurality of illumination sources, each of the plurality of illumination sources configured to emit illumination light, an optical scanning device disposed in an optical path of the plurality of illumination sources, the optical scanning device configured to oscillate about a first axis to redirect the illumination light emitted by the plurality of illumination sources from the LIDAR device into a three-dimensional (3-D) environment, a plurality of photosensitive detectors, each of the plurality of photosensitive detectors configured to detect a respective portion of return light reflected from the 3-D environment when illuminated by a respective portion of the illumination light, and a scanning mechanism configured to rotate the optical scanning device about a second axis orthogonal to the first axis.

Abstract: A light detection and ranging (LiDAR) method may include generating, by a first transmitter, a first light illumination signal; generating, by a second transmitter, a second light illumination signal; receiving first return signals corresponding to the first light illumination signal; receiving second return signals corresponding to the second light illumination signal; and sampling the first return signals or the second return signals during a short-range sampling period, such that the short-range sampling period avoids a period of dazzle.

Abstract: A memory device includes a plurality of memory cells, a first nonconductive separator material separating the memory cells and having a word line end and bit line end, a metal via separated from the plurality of memory cells by a second nonconductive separator material, and metal bit line electrically connecting the metal via with the plurality of memory cells. The memory cells include a phase change material layer, a first electrode layer adjacent to the phase change material layer and having a phase change material layer side oriented toward the phase change material layer and a bit line side opposite the phase change material layer side, a metal silicon nitride layer on a surface of the bit line side of the first electrode layer. A bit line end surface of the first nonconductive separator material is at least partially free of contact with the metal silicon nitride layer.

Abstract: A memory device includes a plurality of memory cells, a first nonconductive separator material separating the memory cells and having a word line end and bit line end, a metal via separated from the plurality of memory cells by a second nonconductive separator material, and metal bit line electrically connecting the metal via with the plurality of memory cells. The memory cells include a phase change material layer, a first electrode layer adjacent to the phase change material layer and having a phase change material layer side oriented toward the phase change material layer and a bit line side opposite the phase change material layer side, a metal silicon nitride layer on a surface of the bit line side of the first electrode layer. A bit line end surface of the first nonconductive separator material is at least partially free of contact with the metal silicon nitride layer.