Abstract: A packaged semiconductor device has a thin profile, two face-to-face mounted power semiconductor device dice, and no internal bond wires. A first semiconductor device die is mounted so that a gate pad is bonded to the bottom of a first lead, and so that a source pad is bonded to the bottom of a second lead. A second semiconductor device die identical to the first is mounted so that a gate pad is bonded to the top of the first lead, and so that a source pad is bonded to the top of the second lead. The backside drain electrodes of both dice are electrically coupled to a third lead. The third lead in one example has a forked-shape, and the two dice are disposed entirely between the two tines of the fork. After encapsulation, the three leads extend parallel to each other from a body portion of the package.

Abstract: A power device includes a semiconductor chip provided over a substrate, and a patterned lead. The patterned lead includes a raised portion located between a main portion and an end portion. At least part of the raised portion is positioned over the semiconductor chip at a larger height than both the main portion and the end portion. A bonding pad may also be included. The end portion may include a raised portion, bonded portion, and connecting portion. At least part of the bonded portion is bonded to the bonding pad and at least part of the raised portion is positioned over the bonding pad at a larger height than the bonded portion and connecting portion. The end portion may also include a plurality of similarly raised portions.

Abstract: A packaged semiconductor device has a thin profile, two face-to-face mounted power semiconductor device dice, and no internal bond wires. A first semiconductor device die is mounted so that a gate pad is bonded to the bottom of a first lead, and so that a source pad is bonded to the bottom of a second lead. A second semiconductor device die identical to the first is mounted so that a gate pad is bonded to the top of the first lead, and so that a source pad is bonded to the top of the second lead. The backside drain electrodes of both dice are electrically coupled to a third lead. The third lead in one example has a forked-shape, and the two dice are disposed entirely between the two tines of the fork. After encapsulation, the three leads extend parallel to each other from a body portion of the package.

Abstract: A packaged semiconductor device has a thin profile, two face-to-face mounted power semiconductor device dice, and no internal bond wires. A first semiconductor device die is mounted so that a gate pad is bonded to the bottom of a first lead, and so that a source pad is bonded to the bottom of a second lead. A second semiconductor device die identical to the first is mounted so that a gate pad is bonded to the top of the first lead, and so that a source pad is bonded to the top of the second lead. The backside drain electrodes of both dice are electrically coupled to a third lead. The third lead in one example has a forked-shape, and the two dice are disposed entirely between the two tines of the fork. After encapsulation, the three leads extend parallel to each other from a body portion of the package.

Abstract: A packaged semiconductor device has a thin profile, two face-to-face mounted power semiconductor device dice, and no internal bond wires. A first semiconductor device die is mounted so that a gate pad is bonded to the bottom of a first lead, and so that a source pad is bonded to the bottom of a second lead. A second semiconductor device die identical to the first is mounted so that a gate pad is bonded to the top of the first lead, and so that a source pad is bonded to the top of the second lead. The backside drain electrodes of both dice are electrically coupled to a third lead. The third lead in one example has a forked-shape, and the two dice are disposed entirely between the two tines of the fork. After encapsulation, the three leads extend parallel to each other from a body portion of the package.

Abstract: A power device includes a semiconductor chip provided over a substrate, and a patterned lead. The patterned lead includes a raised portion located between a main portion and an end portion. At least part of the raised portion is positioned over the semiconductor chip at a larger height than both the main portion and the end portion. A bonding pad may also be included. The end portion may include a raised portion, bonded portion, and connecting portion. At least part of the bonded portion is bonded to the bonding pad and at least part of the raised portion is positioned over the bonding pad at a larger height than the bonded portion and connecting portion. The end portion may also include a plurality of similarly raised portions.

Abstract: A power device includes a semiconductor chip provided over a substrate, and a patterned lead. The patterned lead includes a raised portion located between a main portion and an end portion. At least part of the raised portion is positioned over the semiconductor chip at a larger height than both the main portion and the end portion. A bonding pad may also be included. The end portion may include a raised portion, bonded portion, and connecting portion. At least part of the bonded portion is bonded to the bonding pad and at least part of the raised portion is positioned over the bonding pad at a larger height than the bonded portion and connecting portion. The end portion may also include a plurality of similarly raised portions.

Abstract: A display device includes a display panel; and a backlight panel provided below the display panel and defining a plurality of regions. A first array of light emitting diodes (LEDs) is provided along a first direction, each LED of the first array being coupled to a first line. A driver is coupled to the first line to drive the LEDs coupled to the first line. A second array of LEDs is provided along a second direction, each LEDs of the second array being coupled to a second line. A lighting condition of the regions defined by the backlight panel is controlled by turning on or off the LEDs.

Abstract: A cellular telephone case has front and back panels. A cellular telephone is coupled to the case by pushing the telephone into the case such that the main dock connector of the telephone engages a plug on the back panel. When the telephone is in this position, a back surface of the telephone is held in place on an inside surface of the back panel. The front panel is hinged so that it folds over and covers the telephone. In this folded position, the upward and outward facing outside surface of the front panel includes an E-ink display, a plurality of photovoltaic cells for charging a rechargeable battery of the case, and several buttons. Image information from the telephone is transferred to the case through the dock connector, and then viewed on the display using energy stored in the battery, even after the telephone has been decoupled from the case.

Abstract: A DBA-based power device includes a DBA (Direct Bonded Aluminum) substrate. An amount of silver nanoparticle paste of a desired shape and size is deposited (for example by micro-jet deposition) onto a metal plate of the DBA. The paste is then sintered, thereby forming a sintered silver feature that is in electrical contact with an aluminum plate of the DBA. The DBA is bonded (for example, is ultrasonically welded) to a lead of a leadframe. Silver is deposited onto the wafer back side and the wafer is singulated into dice. In a solderless silver-to-silver die attach process, the silvered back side of a die is pressed down onto the sintered silver feature on the top side of the DBA. At an appropriate temperature and pressure, the silver of the die fuses to the sintered silver of the DBA. After wirebonding, encapsulation and lead trimming, the DBA-based power device is completed.

Abstract: A packaged power device involves no soft solder and no wire bonds. The direct-bonded metal layers of two direct metal bonded ceramic substrate assemblies, such as Direct Bonded Aluminum (DBA) substrates, are provided with sintered silver pads. Silver nanoparticle paste is applied to pads on the frontside of a die and the paste is sintered to form silver pads. Silver formed by an evaporative process covers the backside of the die. The die is pressed between the two DBAs such that direct silver-to-silver bonds are formed between sintered silver pads on the frontside of the die and corresponding sintered silver pads of one of the DBAs, and such that a direct silver-to-silver bond is formed between the backside silver of the die and a sintered silver pad of the other DBA. After leadforming, leadtrimming and encapsulation, the finished device has exposed ceramic of both DBAs on outside package surfaces.

Abstract: A packaged power device involves no soft solder and no wire bonds. The direct-bonded metal layers of two direct metal bonded ceramic substrate assemblies, such as Direct Bonded Aluminum (DBA) substrates, are provided with sintered silver pads. Silver nanoparticle paste is applied to pads on the frontside of a die and the paste is sintered to form silver pads. Silver formed by an evaporative process covers the backside of the die. The die is pressed between the two DBAs such that direct silver-to-silver bonds are formed between sintered silver pads on the frontside of the die and corresponding sintered silver pads of one of the DBAs, and such that a direct silver-to-silver bond is formed between the backside silver of the die and a sintered silver pad of the other DBA. After leadforming, leadtrimming and encapsulation, the finished device has exposed ceramic of both DBAs on outside package surfaces.

Abstract: A portable electronic device includes a housing including an outer surface and an inner surface. A core electronic component is configured to be provided inside of the housing. A transparent material is provided at the outer surface of the housing. A solar cell is provided on the inner surface of the housing and spaced apart from the transparent material by a predetermined distance. The transparent material is configured to receive light from an external source and direct the light to the solar cell.

Abstract: A packaged power device involves no soft solder and no wire bonds. The direct-bonded metal layers of two direct metal bonded ceramic substrate assemblies, such as Direct Bonded Aluminum (DBA) substrates, are provided with sintered silver pads. Silver nanoparticle paste is applied to pads on the frontside of a die and the paste is sintered to form silver pads. Silver formed by an evaporative process covers the backside of the die. The die is pressed between the two DBAs such that direct silver-to-silver bonds are formed between sintered silver pads on the frontside of the die and corresponding sintered silver pads of one of the DBAs, and such that a direct silver-to-silver bond is formed between the backside silver of the die and a sintered silver pad of the other DBA. After leadforming, leadtrimming and encapsulation, the finished device has exposed ceramic of both DBAs on outside package surfaces.

Abstract: Methods and apparatuses for converting carbon dioxide and treating waste material using a high energy electron beam are disclosed. For example, carbon dioxide and an aqueous reaction solution having a reactant can be combined to form an aqueous reaction mixture, and the aqueous reaction mixture can then be subjected to a high energy electron beam that initiates a reaction between carbon dioxide and the reactant to form a reaction product. Solid or liquid waste material can be treated by, for example, combining carbon dioxide and a solid or liquid waste material having a reactant and then subjecting the carbon dioxide and solid or liquid waste material having a reactant to a high energy electron beam to initiate a reaction between the carbon dioxide and the reactant to form a reaction product.

Abstract: A power device includes a semiconductor chip provided over a substrate, and a patterned lead. The patterned lead includes a raised portion located between a main portion and an end portion. At least part of the raised portion is positioned over the semiconductor chip at a larger height than both the main portion and the end portion. A bonding pad may also be included. The end portion may include a raised portion, bonded portion, and connecting portion. At least part of the bonded portion is bonded to the bonding pad and at least part of the raised portion is positioned over the bonding pad at a larger height than the bonded portion and connecting portion. The end portion may also include a plurality of similarly raised portions.

Abstract: A DBA-based power device includes a DBA (Direct Bonded Aluminum) substrate. An amount of silver nanoparticle paste of a desired shape and size is deposited (for example by micro-jet deposition) onto a metal plate of the DBA. The paste is then sintered, thereby forming a sintered silver feature that is in electrical contact with an aluminum plate of the DBA. The DBA is bonded (for example, is ultrasonically welded) to a lead of a leadframe. Silver is deposited onto the wafer back side and the wafer is singulated into dice. In a solderless silver-to-silver die attach process, the silvered back side of a die is pressed down onto the sintered silver feature on the top side of the DBA. At an appropriate temperature and pressure, the silver of the die fuses to the sintered silver of the DBA. After wirebonding, encapsulation and lead trimming, the DBA-based power device is completed.

Abstract: A power device includes a semiconductor chip provided over a substrate, and a patterned lead. The patterned lead includes a raised portion located between a main portion and an end portion. At least part of the raised portion is positioned over the semiconductor chip at a larger height than both the main portion and the end portion. A bonding pad may also be included. The end portion may include a raised portion, bonded portion, and connecting portion. At least part of the bonded portion is bonded to the bonding pad and at least part of the raised portion is positioned over the bonding pad at a larger height than the bonded portion and connecting portion. The end portion may also include a plurality of similarly raised portions.

Abstract: A packaged power device involves no soft solder and no wire bonds. The direct-bonded metal layers of two direct metal bonded ceramic substrate assemblies, such as Direct Bonded Aluminum (DBA) substrates, are provided with sintered silver pads. Silver nanoparticle paste is applied to pads on the frontside of a die and the paste is sintered to form silver pads. Silver formed by an evaporative process covers the backside of the die. The die is pressed between the two DBAs such that direct silver-to-silver bonds are formed between sintered silver pads on the frontside of the die and corresponding sintered silver pads of one of the DBAs, and such that a direct silver-to-silver bond is formed between the backside silver of the die and a sintered silver pad of the other DBA. After leadforming, leadtrimming and encapsulation, the finished device has exposed ceramic of both DBAs on outside package surfaces.

Abstract: A DBA-based power device includes a DBA (Direct Bonded Aluminum) substrate. An amount of silver nanoparticle paste of a desired shape and size is deposited (for example by micro-jet deposition) onto a metal plate of the DBA. The paste is then sintered, thereby forming a sintered silver feature that is in electrical contact with an aluminum plate of the DBA. The DBA is bonded (for example, is ultrasonically welded) to a lead of a leadframe. Silver is deposited onto the wafer back side and the wafer is singulated into dice. In a solderless silver-to-silver die attach process, the silvered back side of a die is pressed down onto the sintered silver feature on the top side of the DBA. At an appropriate temperature and pressure, the silver of the die fuses to the sintered silver of the DBA. After wirebonding, encapsulation and lead trimming, the DBA-based power device is completed.