Patents by Inventor Nathaniel E. Brese

Nathaniel E. Brese has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Catalyst composition and deposition method
    Publication number: 20090192029
    Abstract: Compositions and methods for depositing one or more metal or metal alloy films on substrates. The compositions contain a catalyst, one or more carrier particles and one or more water-soluble or water-dispersible organic compounds. Metal or metal alloys may be deposited on the substrates by electroless or electrolytic deposition.
    Type: Application
    Filed: January 14, 2009
    Publication date: July 30, 2009
    Applicant: Rohm and Haas Electronic Materials LLC
    Inventors: Peter R. Levey, Nathaniel E. Brese
  • Catalyst composition and deposition method
    Patent number: 7510993
    Abstract: Compositions and methods for depositing one or more metal or metal alloy films on substrates. The compositions contain a catalyst, one or more carrier particles and one or more water-soluble or water-dispersible organic compounds. Metal or metal alloys may be deposited on the substrates by electroless or electrolytic deposition.
    Type: Grant
    Filed: June 24, 2004
    Date of Patent: March 31, 2009
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Peter R. Levey, Nathaniel E. Brese
  • Electrochemically deposited indium composites
    Publication number: 20090075102
    Abstract: Electrochemically deposited indium composites are disclosed. The indium composites include indium metal or an alloy of indium with one or more ceramic materials. The indium composites have high bulk thermal conductivities. Articles containing the indium composites also are disclosed.
    Type: Application
    Filed: August 26, 2008
    Publication date: March 19, 2009
    Applicant: Rohm and Haas Electronic Materials LLC
    Inventors: Nathaniel E. Brese, Edit Szocs, Felix J. Schwager, Michael P. Toben, Martin W. Bayes
  • Silicon carbide with high thermal conductivity
    Patent number: 7438884
    Abstract: A chemical vapor deposited, ? phase polycrystalline silicon carbide having a high thermal conductivity and reduced stacking faults. The silicon carbide is synthesized under specific conditions using hydrogen gas and methyltrichlorosilane gas as reactants. The thermal conductivity of the silicon carbide is sufficiently high such that it can be employed as parts of apparatus and components of electrical devices where a high heat load is generated. Such components may include active thermoelectric coolers, heat sinks and fans.
    Type: Grant
    Filed: August 2, 2004
    Date of Patent: October 21, 2008
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Nathaniel E. Brese, Jitendra S. Goela, Michael A. Pickering
  • Electronic device manufacture
    Patent number: 7041331
    Abstract: Compositions suitable for use as underfill materials in an integrated circuit assembly are provided. Also provided are methods of preparing integrated circuit assemblies containing certain underfill materials as well as electronic devices containing such integrated circuit assemblies.
    Type: Grant
    Filed: April 2, 2004
    Date of Patent: May 9, 2006
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Angelo A. Lamola, Nathaniel E. Brese
  • Electronic device manufacture
    Publication number: 20040262751
    Abstract: Compositions suitable for use as underfill materials in an integrated circuit assembly are provided. Also provided are methods of preparing integrated circuit assemblies containing certain underfill materials as well as electronic devices containing such integrated circuit assemblies.
    Type: Application
    Filed: April 2, 2004
    Publication date: December 30, 2004
    Applicant: Rohm and Haas Electronic Chemicals, L.L.C.
    Inventors: Angelo A. Lamola, Nathaniel E. Brese
  • Silicon carbide with high thermal conductivity
    Patent number: 6811761
    Abstract: A chemical vapor deposited, &bgr; phase polycrystalline silicon carbide having a high thermal conductivity and reduced stacking faults. The silicon carbide is synthesized under specific conditions using hydrogen gas and methyltrichlorosilane gas as reactants. The thermal conductivity of the silicon carbide is sufficiently high such that it can be employed as parts of apparatus and components of electrical devices where a high heat load is generated. Such components may include active thermoelectric coolers, heat sinks and fans.
    Type: Grant
    Filed: November 9, 2001
    Date of Patent: November 2, 2004
    Assignee: Shipley Company, L.L.C.
    Inventors: Nathaniel E. Brese, Jitendra S. Goela, Michael A. Pickering
  • Silicon carbide with high thermal conductivity
    Publication number: 20020106535
    Abstract: A chemical vapor deposited, p phase polycrystalline silicon carbide having a high thermal conductivity and reduced stacking faults. The silicon carbide is synthesized under specific conditions using hydrogen gas and methyltrichlorosilane gas as reactants. The thermal conductivity of the silicon carbide is sufficiently high such that it can be employed as parts of apparatus and components of electrical devices where a high heat load is generated. Such components may include active thermoelectric coolers, heat sinks and fans.
    Type: Application
    Filed: November 9, 2001
    Publication date: August 8, 2002
    Applicant: Shipley Company, L.L.C.
    Inventors: Nathaniel E. Brese, Jitendra S. Goela, Michael A. Pickering
  • Alkali iodide doped zinc sulfide electroluminescent phoshor
    Patent number: 6090311
    Abstract: An electroluminescent phosphor containing an alkali iodide dopant, such as lithium iodide or potassium iodide, and having CIE coordinates of x=0.173 to 0.187 and y=0.392 to <0.424. The phosphor without alkali iodide dopant has CIE coordinates of x.apprxeq.0.180 to 0.184 and y.apprxeq.0.424 to 0.426. The method of making the phosphor includes adding the alkali iodides during a second firing step.
    Type: Grant
    Filed: December 1, 1998
    Date of Patent: July 18, 2000
    Assignee: Osram Sylvania Inc.
    Inventors: Nathaniel E. Brese, Vaddi Butchi Reddy
  • Small size electroluminescent phosphor
    Patent number: 5643496
    Abstract: An electroluminescent phosphor composed of copper activated zinc sulfide having an average particle size less than 23 micrometers and a halflife equal to or greater than the halflife of a second phosphor having a similar composition and an average particle size of at least 25 micrometers.
    Type: Grant
    Filed: April 4, 1996
    Date of Patent: July 1, 1997
    Assignee: OSRAM Sylvania Inc.
    Inventors: Nathaniel E. Brese, Kenneth T. Reilly